Abstract2D inorganic bimolecular crystals, consisting of two different inorganic molecules, are expected to possess novel physical and chemical properties due to the synergistic effect of the individual components. However, 2D inorganic bimolecular crystals remain unexploited because of the difficulties in preparation arising from non‐typical layered structures and intricate intermolecular interactions. Here, the synthesis of 2D inorganic bimolecular crystal SbI3·3S8 nanobelts via a facile vertical microspacing sublimation strategy is reported. The as‐synthesized SbI3·3S8 nanobelts exhibit strong in‐plane anisotropy of phonon vibrations and intramolecular vibrations as well as show anisotropic light absorption with a high dichroism ratio of 3.9. Furthermore, it is revealed that the second harmonic generation intensity of SbI3·3S8 nanobelts is highly dependent on the excitation wavelength and crystallographic orientation. This work can inspire the growth of more 2D inorganic bimolecular crystals and excite potential applications for bimolecular optoelectronic devices.
As important members of transition metal chalcogenides (TMCs), transition metal tellurides (TMTs) have drawn much attention for their various crystal structures with various physical properties. These various structures and structural transitions between them not only are fascinating in the fundamental studies, but also provide unprecedented opportunities in novel device design and applications. In this review, the recent developments in the area of TMTs are outlined. First, the unique crystal and electronic structures of TMTs are introduced. Then the TMTs preparation strategies, including novel exfoliation technique and chemical vapor deposition (CVD), are reviewed. Moreover, the distinctive physical properties of TMTs such as phase transition, intrinsic ferromagnetism, and superconductivity are summarized. Additionally, an overview of device applications in the electronics and optoelectronics field is provided. The prospect for the research of TMTs is presented at the end.
2D materials have received considerable research interest owing to their abundant material systems and remarkable properties. Among them, 2D group VB transition metal chalcogenides (GVTMCs) stand out as emerging 2D metallic materials and significantly broaden the research scope of 2D materials. 2D GVTMCs have great advantages in electrical transport, 2D magnetism, charge density wave, sensing, catalysis, and charge storage, making them attractive in the fields of functional devices and energy chemistry. In this review, the recent progress of 2D GVTMCs is summarized systematically from fundamental properties, growth methodologies to potential applications. The challenges and prospects are also discussed for future research in this field.
2D ferromagnetic materials provide an important platform for the fundamental magnetic research at atomic-layer thickness which has great prospects for next-generation spintronic devices. However, the currently discovered 2D ferromagnetic materials (such as, CrI 3 , Cr 2 Ge 2 Te 6 , and Fe 3 GeTe 2) suffer from poor air stability, which hinders their practical application. Herein, intrinsic long-range ferromagnetic order in 2D Ta 3 FeS 6 is reported, which exhibits ultrahigh stability under the atmospheric environment. The intrinsic ferromagnetism of few-layer Ta 3 FeS 6 is revealed by polar magneto-optical Kerr effect measurement, which exhibits giant MOKE response and has Curie temperature of ≈80 K. More importantly, few-layer Ta 3 FeS 6 nanosheet exhibits excellent air stability and its ferromagnetism remains unchanged after 4 months of aging under the atmosphere. This work enriches the family of 2D ferromagnetic materials, which will facilitate the research progress of spintronics. 2D materials have generated great research interest due to their atomic flat interface structure, unique electronic structure (semiconducting, metallic, and superconducting), and a wide range of applications (high-mobility transistors, ultra-sensitive photodetectors, high-efficiency energy conversion). [1-6] The emerging 2D ferromagnetic materials combining spin with the unique electronic structure of 2D materials exhibit novel magnetoelectric and magneto-optical properties, which prefigures the rising of spintronics. [7,8] Recently, 2D ferromagnetism was discovered in chromium trihalides (CrX 3 , X = Cl, Br, I), [9-13]
Manganese phosphorous selenium (MnPSe 3 ), as a representative of layered metal phosphorus trichalcogenides (MPTs), has gained significant attention due to its direct bandgap, high carrier mobility, large absorption coefficient, which indicate great potential in photoelectric application. Herein, high-quality two-dimensional (2D) MnPSe 3 flakes were mechanically exfoliated from the corresponding bulk crystals synthesized by chemical vapor transport (CVT) methods. The systematic investigation was applied to the lattice vibrations of MnPSe 3 via angle-resolved polarized Raman spectroscopy (ARPRS), and the Raman vibration modes were determined based on Raman selection rules and crystal symmetry. Impressively, the photodetectors based on 2D MnPSe 3 flakes exhibit excellent photoresponse to the ultraviolet light with a responsivity up to 22.7 A W −1 and a detectivity of 2.4 ×10 11 Jones. The high performance in the ultraviolet range signifies that 2D MnPSe 3 is expected to be a powerful candidate for future ultraviolet photodetection.
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