Unique determination of AlGaAs/GaAs HBT's small-signal equivalent circuit parameters

Wu, Der-Woei; Miller, David L.; Fukuda, M.; Yun, Yong‐Hoon

doi:10.1109/gaas.1993.394456

15th Annual GaAs IC Symposium

DOI: 10.1109/gaas.1993.394456

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Unique determination of AlGaAs/GaAs HBT's small-signal equivalent circuit parameters

Der-Woei Wu

David L. Miller

M. Fukuda³

et al.

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Cited by 19 publications

References 3 publications

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Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)

Schultheis¹,

Bovolon²,

Mller³

et al. 2000

Int. J. RF and Microwave Comp. Aid. Eng.

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This work describes an approach for small signal modelling of GaAs‐based heterojunction bipolar transistors (HBTs) for low‐voltage/high‐power application (i.e., Vce=3 V, Jc=3×104 A/cm2). The parameter extraction procedure is discussed in detail. Furthermore, it is demonstrated that the model is fully scalable with respect to emitter area by comparison of simulated and measured S‐parameters in the frequency range from DC to 20 GHz. Based on the small signal model, a nonlinear large signal model with the same Π‐type topology is proposed. It has a small number of parameters and considers self‐heating, which is particularly important for HBTs. Parameter extraction is discussed and it is demonstrated by comparison of simulation and measurement that the model can accurately predict the DC characteristics of a HBT for ambient temperatures ranging from 20 to 100°C. ©2000 John Wiley & Sons, Inc. Int J RF and Microwave CAE 10: 33–42, 2000.

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Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)

Schultheis¹,

Bovolon²,

Mller³

et al. 2000

Int. J. RF and Microwave Comp. Aid. Eng.

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Analysis of device parameters for pnp-type AlGaAs/GaAs HBTs including high-injection using new direct parameter extraction

Kameyama

Massengale²,

Dai

et al. 1997

IEEE Trans. Electron Devices

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Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors

Wei

Hwang

1995

IEEE Trans. Microwave Theory Techn.

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Unique determination of AlGaAs/GaAs HBT's small-signal equivalent circuit parameters

Cited by 19 publications

References 3 publications

Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)

Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)

Analysis of device parameters for pnp-type AlGaAs/GaAs HBTs including high-injection using new direct parameter extraction

Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors

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