2007 IEEE International Electron Devices Meeting 2007
DOI: 10.1109/iedm.2007.4419010
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Uniform High Current Field Emission of Electrons from Si and CNF FEAs Individually Controlled by Si Pillar Ungated FETs

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Cited by 14 publications
(11 citation statements)
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“…Third, we previously showed that it is possible to achieve current limitation in the electron current if the device is made of a lowly doped silicon (∼ 10 13 cm −3 doping concentration) [53]. The current limitation is presumably due to the high aspect ratio of the μfoam, pinch off of the conduction channel due to the applied voltage, and the velocity saturation at high fields of electrons within the semiconductor lattice, resulting in more spatially uniform current emission [57], [58]. Finally, the design of the ionizer can potentially simplify the overall MS system integration by including a structure (i.e., the μfoam) that can serve as an interface between the interior and exterior of the MS.…”
Section: Device Structure and Designmentioning
confidence: 99%
“…Third, we previously showed that it is possible to achieve current limitation in the electron current if the device is made of a lowly doped silicon (∼ 10 13 cm −3 doping concentration) [53]. The current limitation is presumably due to the high aspect ratio of the μfoam, pinch off of the conduction channel due to the applied voltage, and the velocity saturation at high fields of electrons within the semiconductor lattice, resulting in more spatially uniform current emission [57], [58]. Finally, the design of the ionizer can potentially simplify the overall MS system integration by including a structure (i.e., the μfoam) that can serve as an interface between the interior and exterior of the MS.…”
Section: Device Structure and Designmentioning
confidence: 99%
“…Finally, the data shows that our ionizer is currentlimited, presumably because of velocity saturation of electrons within the µfoam, resulting in more uniform current emission [12], [13]. Un-ballasted field emitter arrays don't work uniformly because of the broad tip diameter size distribution and the strong dependence of the current emission on the emitter tip diameter as shown by Eq.…”
Section: Device Structure and Designmentioning
confidence: 98%
“…The current limitation effect seems to be related to the high aspect-ratio of the µfoam structure, and the high resistivity (> 50 Ω.cm) of the silicon substrate used to create it. The µfoam acts as an ungated field-effect transistor (FET) that limits the current due to velocity saturation of electrons in silicon [12], [13]. The linear part of the FN plot predicts a field factor β = 3.3×10 5 /cm.…”
Section: Experimental Characterizationmentioning
confidence: 99%
“…Field emitters quantum tunnel electrons to vacuum when the electrostatic field on the emitter tip surface is at least ~3×10 7 V/cm [6]; nanosharp tips can generate such high electric fields at a low bias voltage (< 100 V). Arrays of emitters can be used to greatly increase the total emission current of the field emission cathode [7], and individual regulation of the emitters can be implemented to achieve high array utilization and emission uniformity [8], [9]. Field emission cathodes operate at room temperature, consume less power to produce the same electron current compared to thermionic electron sources, and they can also operate at lower vacuum [10] and in atmospheres with residual reactive gases [11].…”
Section: Introductionmentioning
confidence: 99%