2022
DOI: 10.1088/1674-1056/ac6339
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Uniaxial stress effect on quasi-one-dimensional Kondo lattice CeCo2Ga8

Abstract: Quantum critical phenomena in the quasi-one-dimensional limit remains an open issue. We report the uniaxial stress effect on the quasi-one-dimensional Kondo lattice CeCo2Ga8 by electric transport and AC heat capacity measurements. CeCo2Ga8 is speculated to sit in close vicinity but on the quantum-disordered side of a quantum critical point. Upon compressing the c axis, parallel to the Ce-Ce chain, the onset of coherent Kondo effect is enhanced. In contrast, the electronic specific heat diverges more rapidly at… Show more

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Cited by 2 publications
(1 citation statement)
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“…[1,2] Enormous efforts have been devoted to the fabrication of the various systems and many magnetic materials have been reported, such as CrI 3 , [3] Fe 3 GeTe 2 , [4,5] Cr 3 Te 4 , [6] CrBr 3 , [7] and Cr 2 Ge 2 Te 6 . [8] One of the merits that exploring the vdW layered magnetic system is that the magnetism can normally be tuned by customizing the stacking and doping of the system [9][10][11] or exerting optical method [12][13][14][15] as well as strain engineering, [16][17][18] which are extremely important for the efficient switching in building the magnetic memory devices. Although versatile methodologies have been explored, [19] the delicate tuning of the lattice structure to realize the dramatic change in the magnetism of the vdW layered system is still scarce.…”
Section: Introductionmentioning
confidence: 99%
“…[1,2] Enormous efforts have been devoted to the fabrication of the various systems and many magnetic materials have been reported, such as CrI 3 , [3] Fe 3 GeTe 2 , [4,5] Cr 3 Te 4 , [6] CrBr 3 , [7] and Cr 2 Ge 2 Te 6 . [8] One of the merits that exploring the vdW layered magnetic system is that the magnetism can normally be tuned by customizing the stacking and doping of the system [9][10][11] or exerting optical method [12][13][14][15] as well as strain engineering, [16][17][18] which are extremely important for the efficient switching in building the magnetic memory devices. Although versatile methodologies have been explored, [19] the delicate tuning of the lattice structure to realize the dramatic change in the magnetism of the vdW layered system is still scarce.…”
Section: Introductionmentioning
confidence: 99%