Uni-traveling-carrier double heterojunction phototransistor photodetector

Wen-Juan, Huo; Xie, Hongyun; Liu, Song; Zhang, Wanrong; Jiang, Zhi‐Yun; Chen, Xiang

doi:10.7498/aps.62.228501

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…The photogenerated holes, as the majority carrier in the base, relax fast toward the emitter and accumulate at the base/emitter heterointerface and then lower the base-emitter barrier potential, which allows a large number of electrons to be injected from the emitter to the collector and amplifies the initial electron photocurrent. [14] A great photocurrent gain can be achieved by this process. The phototransistor optical responsivity (A/W) is calculated to be [15] γ UTC−DHPT = I p /P opt ,…”

Section: Working Mechanism Of Utc-dhptmentioning

confidence: 99%

“…Recently, there were several reports on applying the UTC idea to an InP-based hetero-junction phototransistor (HPT). [13,14] However, the main work focused on structure optimization based on a two-dimensional (2D) simulation and some elementary experiments. Since the UTC structure is ex-pected to greatly improve the performance of HPT, it is necessary to further study the working mechanism and optimization of UTC-DHPT deeply.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Jiang¹,

Xie²,

Zhang³

et al. 2015

Chinese Phys. B

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In this paper, the positive influence of a uni-traveling-carrier (UTC) structure to ease the contract between the responsivity and working speed of the InP-based double hetero-junction phototransistor (DHPT) is illustrated in detail. Different results under electrical bias, optical bias or combined electrical and optical bias are analyzed for an excellent UTC-DHPT performance. The results show that when the UTC-DHPT operates at three-terminal (3T) working mode with combined electrical bias and optical bias in base, it keeps a high optical responsivity of 34.72 A/W and the highest optical transition frequency of 120 GHz. The current gain of the 3T UTC-DHPT under 1.55-μm light illuminations reaches 62 dB. This indicates that the combined base electrical bias and optical bias of 3T UTC-DHPT can make sure that the UTC-DHPT provides high optical current gain and high optical transition frequency simultaneously.

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Section: Working Mechanism Of Utc-dhptmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Jiang¹,

Xie²,

Zhang³

et al. 2015

Chinese Phys. B

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Influence of base structural parameters on responsivity and characteristic frequency of SiGe Heterojunction Phototransistor

Xie

Chen

et al. 2018

2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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Two-tone optical heterodyning method for the self-calibrated measurement of half-wave voltage of electrooptic phase modulator

Wang¹,

Zhang²,

Xin-Hai³

et al. 2015

Acta Phys. Sin.

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High speed electrooptic phase modulators play very important roles in the high-speed optical fiber communication system, microwave photonic system, and coherent optical communication system, due to their advantages of bias voltage free and linear modulation. As an intrinsic parameter, the half-wave voltage of an electrooptic phase modulator has been characterized by using an electrical spectrum method and an optical spectrum method in the last two decades. The optical spectrum method is generally limited by the line-width of the laser source and the resolution of the available optical spectrum analyzer, while the electrical spectrum method requires the conversion from phase modulation to intensity modulation before photodetection, since a phase modulator generates a phase modulated optical signal with constant envelope. The major difficulty in the electrical spectrum method lies in the extra calibration for the responsivity fluctuation in the photodetection. In this paper, a novel self-calibrated measurement of half-wave voltage of electrooptic phase modulators is carried out based on the optical heterodyning between the two-tone phase modulated sidebands and the frequency-shifted carrier. The method achieves a self-calibration measurement, and avoids the effect of the responsivity fluctuation in the photodetection by setting a specific frequency relationship between the two-tone microwave signals. Moreover, it extends the measuring frequency range to the double bandwidth of photodetection and spectrum analysis. Compared with the optical spectrum method, the proposed method achieves very high frequency resolution measurement, and simultaneously avoids the line-width influence of laser source by use of two-tone heterodyning. Compared with the traditional electrical spectrum method, our method works under no small-signal assumption nor photodetection calibration, and eliminates the limits of electrical driving amplitude and operating wavelength. Moreover, it decreases by at least half bandwidth requirement for the photodetector and spectrum analyzer. Our experimental demonstration shows that the measured half-wave voltages of the electrooptic phase modulator obtained by our method agree well with the data measured by the optical spectrum method, and the two-tone heterodyning method greatly improves the measurement range and frequency resolution. The proposed measurement method provides a very simple analysis method for the microwave characterization of high-speed electrooptic phase modulators, which is also a reference for other optoelectronic devices.

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Uni-traveling-carrier double heterojunction phototransistor photodetector

Cited by 3 publications

References 16 publications

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Analysis on high speed response of a uni-traveling-carrier double hetero-junction phototransistor

Influence of base structural parameters on responsivity and characteristic frequency of SiGe Heterojunction Phototransistor

Two-tone optical heterodyning method for the self-calibrated measurement of half-wave voltage of electrooptic phase modulator

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