Une nouvelle méthode d'épitaxie en phase vapeur d'arseniure de gallium de haute pureté

Merenda, P.

doi:10.1016/0022-0248(72)90179-0

Cited by 10 publications

(8 citation statements)

References 5 publications

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“…The increase in growth rate with increasing values of AsH~ or As4 partial pressure has also been observed by several other investigators (9,14). The curve saturates at high AsH3 flow rates because of the limited amount of GaCI available to react with the As-vapor species.…”

Section: Gacl(g) 4-1/2 As~(g) + 1/2 H2(g) ----Gaas(s) 4-hcl(~)supporting

confidence: 83%

“…In fact, previous work has shown that the background donor concentration of vapor-grown GaAs layers can be influenced by gasphase (Ga/As) ratios for donor concentrations in the range of 1014-1015 cm -a (7,9). Concerning crystal stoichiometry, a change in the Ga or As vacancy concentration with changing gas flow conditions should enhance the incorporation of one type of impurity (either donors or acceptors), while retarding the incorporation of the other.…”

Section: Gacl(g) 4-1/2 As~(g) + 1/2 H2(g) ----Gaas(s) 4-hcl(~)mentioning

confidence: 99%

“…For example, several workers (7)(8)(9) have examined the influence of Ga/As flow ratios on the background (reactor) concentrations of unintentionally doped GaAs with n ~ 1014-1015 cm -3. In these studies, the gas-phase stoichiometry was found to influence the incorporation of the donor and/or acceptor impurities; however, the effects of gas-phase stoichiometry on the electrical properties of epitaxial layers with significantly higher impurity concentrations have not been previously explored.…”

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confidence: 99%

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Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions

Enstrom

Nuese

Appert

et al. 1974

J. Electrochem. Soc.

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The vapor-hydride method of GaAs epitaxial growth permits separate control of the flow rates of both the AsH~ and HC1 reactant species. In the present work, these variables have been independently adjusted to provide gas-phase compositions ranging from Ga-rich to As-rich. The surface defect morphology has been found to be a strong function of the HC1 flow rate, changing from pits at low flow rates to hillocks at higher flow rates. In contrast, the AsH3 flow rate for constant HC1 flows principally affects the size of the defects. The growth rate increases slightly with increasing AsHs flow rate, but decreases with increasing HC1 flow rate over the range normally used. The Se-donor and Zn-acceptor concentrations both decrease with increasing HC1 flow rate, suggesting that crystal stoichiometry is not strongly influenced by the HC1 flow rate.Electroluminescent diode efficiencies range between 0.1 and 0.5% at room temperature and between 1 and 2.6% at 80~Peak efficiency values have been attained with slightly As-rich gas-phase conditions. * Electrochemical Society Active Member.

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Section: Gacl(g) 4-1/2 As~(g) + 1/2 H2(g) ----Gaas(s) 4-hcl(~)supporting

confidence: 83%

Section: Gacl(g) 4-1/2 As~(g) + 1/2 H2(g) ----Gaas(s) 4-hcl(~)mentioning

confidence: 99%

mentioning

confidence: 99%

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Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions

Enstrom

Nuese

Appert

et al. 1974

J. Electrochem. Soc.

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“…This is because the actual III/V ratio at the growing interface Poacl/ 2pp 2 + 4pp 4 is of course not equal to the "III/V ratio" defined as pHcl~ H3 ~ For a linear relationship between dopant, concentrations and III/V ratio, the III/V ratio at the gas-solid interface must be used. This is an important point generally ignored by many papers dealing with the III/V ratio effects on VPE materials (14,(17)(18)(19). In fact, a very convenient quantity for expressing stoichiometry is aGa defined as pGa(g)/PGa ~ (T).…”

Section: Resultsmentioning

confidence: 99%

“…In VPE, the III/V ratio, which is defined as the ratio of HC1 to PH3 in the input gas stream, is simply changed. However, as discussed later, aGa, the quantity which will be used to specify the gas phase stoichiometry at the solid-vapor interface, is not linearly proportional to the III/V ratio as is normally assumed (14,(17)(18)(19). The problem with this type of experiment is that the results are always ambiguous.…”

Section: Discussionmentioning

confidence: 99%

Effect of III/V Ratio on the Properties of Vapor Phase Epitaxial GaP

Stringfellow

Hall

1976

J. Electrochem. Soc.

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The effect of III/V ratio in the gas stream on the properties of normalGaP grown by the vapor phase epitaxial (VPE) technique has been studied. At the substrate temperature of 840°C, the nitrogen distribution coefficient is found to increase strongly with increasing III/V ratio. Equilibrium thermodynamic calculations explain the dependence well. On the other hand, the residual doping level, believed to be due to S, has the opposite dependence on III/V ratio which is not understood. The minority carrier lifetime and diode efficacy are observed to increase with III/V ratio. An analysis of this behavior indicates the dominant nonradiative recombination center in this material may be a deep acceptor residing on the Ga sublattice, such as Cu or Fe.

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Epitaxy

Agajanian¹

1976

Semiconducting Devices

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Une nouvelle méthode d'épitaxie en phase vapeur d'arseniure de gallium de haute pureté

Cited by 10 publications

References 5 publications

Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions

Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions

Effect of III/V Ratio on the Properties of Vapor Phase Epitaxial GaP

Epitaxy

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