Undoped GaAs grown by the vertical gradient freeze method: growth and properties

Buhrig, E.; Frank, C.; Gärtner, G.; Hein, K. R. G.; Klemm, Volker; Kühnel, G.; Voland, U.

doi:10.1016/0921-5107(94)90022-1

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…There is a large body of experimental evidence that As precipitation on dislocations occurs in all bulk GaAs crystals whatever the dopant impurity, as well as in semi-insulating ingots. Among other papers, see for instance Buhrig et al (1994), Cullis et al (1980), Fornari et al (1989), Frigeri et al (1993), Gleichmann et al (1989), Lee et al (1989a), Lodge et al (1985), Oda et al (1992), Schlossmacher et al (1992), Stirland (1990), Weyher et al (1998), Wurzinger et al (1991). Te-doped GaAs, however, is the exception to this very general rule, since, to the authors' knowledge, no As precipitate decorating dislocations was ever reported for it.…”

Section: Introductionmentioning

confidence: 88%

On the absence of decoration As precipitates at dislocations in Te-doped GaAs

Frigeri¹,

Weyher²,

Jiménez³

2000

J. Phys.: Condens. Matter

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This paper is aimed at explaining the absence of As precipitates decorating dislocations in Te-doped GaAs which are found instead when other dopants are used. By transmission electron microscopy it is seen that dislocations in Te-doped GaAs are always tangled and surrounded by clouds of extrinsic loops but are not decorated with any As precipitate. Diluted Sirtl-like etching used with light (DSL etching), micro-Raman and EBIC (electron-beam-induced-current) results support the conclusion that the regions containing the loop clusters around dislocations are enriched in the TeAsVGa acceptor complex that has formed due to the diffusion of Te towards the dislocation. The formation of TeAsVGa causes an undersaturation of Ga vacancies and hence the production of a supersaturation of Ga interstitials. The latter is the driving force for the formation of the observed extrinsic loops and dislocation tangling through climb. Such processes, however, consume As interstitials which are thus no longer available for the formation of decoration As precipitates. The peculiar characteristic of Te of forming acceptor complexes like TeAsVGa is discussed with reference to the group IV dopants.

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Section: Introductionmentioning

confidence: 88%

On the absence of decoration As precipitates at dislocations in Te-doped GaAs

Frigeri¹,

Weyher²,

Jiménez³

2000

J. Phys.: Condens. Matter

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“…In the LEC GaAs wafers the average dislocation density varied typically in the range of (5-10) × 10 4 cm −2 and the concentrations of EL2 and of carbon were (1-2) × 10 16 cm −3 and (0.5-5) × 10 15 cm −3 respectively. The VGF GaAs wafers have etch pit densities (epd) of 500-1500 cm −2 [8], an EL2 concentration of 8×10 15 cm −3 and a carbon concentration of 3×10 14 cm −3 . Correspondingly, the average cell diameter, which increases with decreasing dislocation density, is much larger in VGF GaAs (≈ 2.5 mm) than in LEC GaAs (≈ 200 µm).…”

Section: Methodsmentioning

confidence: 99%

Point-contact measurements for high-resolution profiling of high-resistivity III - V semiconductors

Siegel

Kühnel

Niklas

et al. 1996

Semicond. Sci. Technol.

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A point-contact technique operating at low forward bias was used for high-resolution profiling of semi-insulating GaAs and InP as well as of medium-resistivity undoped n-type GaAs. Electrical mesoscopic non-uniformities strongly correlated to the cellular structure of dislocations could be detected in LEC GaAs and VGF GaAs. Between the profiles of the point-contact current and of the band-band photoluminescence intensity a close correlation was observed on nearly all LEC GaAs samples and on InP. In the case of VGF GaAs, on the contrary, an anticorrelation exists.

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Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique

Frank¹,

Hein²

1995

Cryst. Res. Technol.

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GaAs crystals having dislocation densities of 1–2 103 cm−2 were grown using VGF technique. In the grown crystals SiGa is the dominant donor and CAs the dominant acceptor. Theoretical and experimental investigations have shown the possibilities to influence on the silicon and carbon content in GaAs. Based on these results, semiinsulating properties in the crystals could be achieved reproducibly.

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Undoped GaAs grown by the vertical gradient freeze method: growth and properties

Cited by 6 publications

References 8 publications

On the absence of decoration As precipitates at dislocations in Te-doped GaAs

On the absence of decoration As precipitates at dislocations in Te-doped GaAs

Point-contact measurements for high-resolution profiling of high-resistivity III - V semiconductors

Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique

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