Undoped and Zn-doped NiO nanosheet/nanoflower-like films-based humidity sensor fabricated via immersion method

Parimon, Norfarariyanti; Mamat, Mohamad Hafiz; Rusop, M.

doi:10.1016/j.matpr.2021.09.364

Cited by 2 publications

(1 citation statement)

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“…ZnO is an excellent oxidizing agent used as a photocatalyst and exhibits superior efficiency due to strong UV absorption [10,11]. ZnO, a group II-VI semiconductor with a hexagonal wurtzite structure, exhibit a wide direct band gap of 3.3 eV and possesses a large exciton binding energy of 60 meV at 300 k. The high carrier mobility, high transparency, and low resistivity [12] of ZnO, validates its applications in devices such as photoconductive UV detectors [13], solar cells [14], humidity and gas sensors [15,16], TFTs [17], LEDs [18] and photocatalysis [19]. Numerous deposition techniques can be employed to deposit Sn-ZnO thin films; including sol-gel [20], pyrolysis spray [21], chemical vapor deposition [22], PLD [23], and vacuum arc thermionic method [24].…”

Section: Introductionmentioning

confidence: 92%

Structural, morphological and optical properties of Sn doped zinc oxide thin films synthesis by sol-gel method for photocatalytic applications

Boufelgha

Zellagui²,

Benachour

et al. 2023

Phys. Scr.

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Undoped and tin (Sn)-doped ZnO thin films were synthesized via sol-gel technique and deposited onto the glass substrates using the spin-coating technique. The impact of Sn incorporation at various concentrations on the structural, morphological, and optical properties of ZnO films was studied X-ray diffraction revealed a hexagonal crystal structure for all samples with a preferential crystalline orientation along the (002) plane. The transparency of Sn-doped ZnO thin film in the visible region significantly increased from 75% to 90%. The morphological analysis revealed a decrease in the grain size from 21 nm to 15 nm with Sn content in the matrix of ZnO. The optical properties reveal the contribution of the Burstein-Moss effect and electron-impurity scattering to slightly widen the bandgap from 3.22 eV to 3.24 eV. Urbach energy values demonstrated that the presence of Sn dopant increased the tail-band width of the localized states. These observations suggest that the deposited Sn-ZnO thin films could have possible applications as a photocatalyst for methylene blue (MB) dye degradation.

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