Underwater Multispectral Computational Imaging Based on a Broadband Water-Resistant Sb₂Se₃ Heterojunction Photodetector

Abstract

Exploration, utilization, and protection of marine resources are of great significance to the survival and development of mankind. However, currently classical optical cameras suffer information loss, low contrast, and color distortion due to the absorption and scattering nature for the underwater environment. Here, we demonstrate an underwater multispectral computational imaging system combined with single-photodetector imaging algorithm technology and a CdS/Sb2Se3 heterojunction photodetector. The computational imaging technology coupled with an advanced Fourier algorithm can capture a scene by a single photodetector without spatial resolution that avoids the need to rely on high-density detectors array and bulky optical components in traditional imaging systems. This convenient computational imaging method provides more flexible possibilities for underwater imaging and promises to give more imaging capabilities (such as multispectral imaging, antiscattering imaging capability) to meet ever-changing demand of underwater imaging. In addition, the water-resistant CdS/Sb2Se3 heterojunction photodetector fabricated by the close spaced sublimation (Sb2Se3) and chemical bath deposition (CdS) shows excellent self-powered photodetection performance at zero bias with high LDR of 128 dB, broadband response spectrum range of 300–1050 nm, high responsivity up to 0.47 A/W, and high specific detectivity over 5 × 1012 jones. Compared with the traditional optical imaging system, our designed computational imaging system that combines the advanced Fourier algorithm and a high-performance CdS/Sb2Se3 heterojunction photodetector exhibits outstanding antiscattering imaging capability (shielded by frosted glass), weak light imaging capability (∼0.2 μW/cm2, corresponding to moonlight intensity), and multispectral imaging capability. Therefore, we believe that this work will boost the progress of marine science.

1D/2D/0D Mixed-Dimensional TiO2/ZnO/Ag Core–Shell Nanowires for High-Performance UV–Vis Photoelectrochemical Photodetectors

“…As seen from the fitting curves in Figure b,e, the values of θ were 0.86 and 0.79 for the TiO 2 /ZnO/Ag-based photodetector at wavelengths of 380 and 420 nm, respectively. The fitted factors θ were very close to the ideal value of 1, which suggests low trap states and efficient photon-to-electron conversion at the interface between 0D Ag QDs and 1D/2D TiO 2 /ZnO core–shell NWs . The response time including the rise time (τ r ) and decay time (τ d ) is the time required for the photocurrent to reach 10–90% from the stable state.…”

“…The fitted factors θ were very close to the ideal value of 1, which suggests low trap states and efficient photon-to-electron conversion at the interface between 0D Ag QDs and 1D/2D TiO 2 /ZnO core−shell NWs. 25 The response time including the rise time (τ r ) and decay time (τ d ) is the time required for the photocurrent to reach 10−90% from the stable state. The τ r and τ d values of the TiO 2 /ZnO/Ag photodetector at 380 and 420 nm are investigated in Figure 4c,f.…”

Perpendicularly Reversed Polarization Sensitivity of Double‐faced Photodetection based on Sb2Se3 Microbelt

“…Sb 2 Se 3 , a typical V-VI semiconductor, is a prominent contender for photovoltaic and photodetection applications owing to its suitable bandgap (≈1.2 eV), large absorption coefficient (>10 5 cm -1 ), non-toxicity, and abundance on the earth. [18][19][20][21][22] The Sb 2 Se 3 semiconductor belongs to space group Pbnm (62) and has an orthorhombic crystal structure with the lattice constants of a = 1.162 nm, b = 1.177 nm, and c = 0.396 nm. [23] The crystal structure of Sb 2 Se 3 materials consists of zigzag chain-like (Sb 4 Se 6 ) n ribbons connecting along the [001] direction through strong SbSe covalent bonds, whereas stacking in the [100] and [010] directions through weak Vander Waals force (See Figure 1a and Figure S1 in Supporting Information).…”

Comparison of Thin Film Sb 2 Se 3 Solar Cell Device Parameters: with Different Electron Transport Layer

“…Friedrich D et al [19] The high photoconversion e ciency of Sb 2 Se 3 makes it an essential photoelectrochemical and photovoltaic material. The complex defect chemistry reduces the maximum photovoltage of Sb Liu Y et al [23] Exploring, using, and protecting marine resources are vital to human survival and progress. In standard optical cameras, underwater absorption and scattering cause information loss, low contrast, and colour distortion.…”