Understanding the shrinkage of optical absorption edges of nanostructured Cd-Zn sulphide films for photothermal applications

Hossain, Md. Sohrab; Kabir, Humayun; Rahman, Md. Mahabubur; Hasan, Kamrul; Bashar, Muhammad Shahriar; Gafur, M. A.; Islam, Shariful; Amri, Amun; Jiang, Zhong Tao; Altarawneh, Mohammednoor; Dlugogorski, Bogdan Z.

doi:10.1016/j.apsusc.2016.09.095

Cited by 37 publications

(16 citation statements)

References 52 publications

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“…The steepness parameter, σ characterizing the broadening of the optical absorption edges due to electron-phonon interactions, was calculated by the following equation [49]:…”

Section: Absorption Band Tailmentioning

confidence: 99%

“…where k B is the Boltzmann constant and T is the absolute temperature in Kelvin. Hence, the values of the strength of the electron-phonon interaction (E e-p ) can be estimated by the following relationship [46,49]:…”

Section: Absorption Band Tailmentioning

confidence: 99%

“…The II-VI semiconductor compound thin films have been investigated for many years because of the multiple applications of these materials, in the field of solar cells, photocatalysts, field-effect transistors, light-emitting devices, and optoelectronic devices [1][2][3][4][5][6][7][8][9][10]. As buffer layer in solar cell, II-VI compounds, such as CdS [7,[11][12][13], ZnS [9,14,15], CdZnS [16][17][18][19][20], CdSe [21,22], CdSSe [23], etc., have been usually used. This binary/ternary compound thin film is reported to be synthesized by various techniques such as molecular beam epitaxy (MBE) [24], chemical bath deposition [5,15,25,26], sputtering [9,10,14,27,28], atomic layer deposition [29], etc.…”

Section: Introductionmentioning

confidence: 99%

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Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

et al. 2019

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The ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24-3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

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“…The steepness parameter, σ characterizing the broadening of the optical absorption edges due to electron-phonon interactions, was calculated by the following equation [49]:…”

Section: Absorption Band Tailmentioning

confidence: 99%

Section: Absorption Band Tailmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

et al. 2019

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“…Different factors may cause such a reduction in the energy gap as aluminium content in the films decreases. The decrease in energy gap tailing which is triggered by the disorder of the film, defects, residual strain, impurities, and disorders of grain boundaries can cause the reduction (Hossain et al 2017).…”

Section: Optical Propertiesmentioning

confidence: 99%

Morphology and optical properties of CuAlS<sub>2</sub> crystals prepared using the solid-phase Al and S precursors

et al. 2020

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Copper dithiocarbamate and aluminium dithiocarbamate were prepared and then characterized by infrared spectroscopy. The combination of the prepared precursors in different ratios was deposited on glass substrates using metalorganic chemical vapour deposition (MOCVD) technique at 450 o C through the pyrolysis of the precursors to yield Cu-Al-S thin films. Compositional, morphological, structural and optical characterizations were then carried out. The compositional analysis revealed that the ratio of Cu to Al in the precursor is not preserved in the films. Morphological study showed that the films are polycrystalline in nature whose homogeneity and grain size distribution decrease with a decrease in Al content of the films. The crystallinity of the films was further revealed from the PXRD results with the formation of the Cu-Al-S crystal structure as the Al content increases in the precursor. The energy gap obtained falls between 2.63 and 2.75 eV which decreases as the Al content in the films decreases. Optical constants such as refractive index and extinction coefficient exhibit a decreasing trend as the Al content in the film decreases.

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“…It is observed that the value Edq is almost constant where as the value of Eiq decreases with increasing thickness except the sample having thickness 300 nm. This might be owing to the possible structural defects in the samples that incorporated during their synthesis [59].…”

Section: Optical Band Gaps and Band Edge Sharpness Determinationmentioning

confidence: 99%

Structural, morphological, compositional and optical studies of plasma polymerized 2-furaldehyde amorphous thin films

Kabir

Rahman

Uddin

et al. 2017

Applied Surface Science

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Thickness, t ± 5 (nm) Highlights  Plasma polymerized 2-furaldehyde thin films of different thicknesses were deposited onto glass substrate in optimum conditions by glow discharge reactor.  XRD results confirmed the amorphous nature of the films.  The as-deposited PPFDH thin films contain asymmetric C-H and C≡C stretching bonds due to plasma polymerization.  The direct and indirect optical band gaps of the PPFDH thin films of different thicknesses were found to be 3.40-3.45 and 2.10-2.45 eV, respectively.  The dispersion energy increases from 6.35 to 18.85 eV while oscillator energy decreases from 3.17 to 2.83 eV with increasing thickness of the thin films.

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Understanding the shrinkage of optical absorption edges of nanostructured Cd-Zn sulphide films for photothermal applications

Cited by 37 publications

References 52 publications

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

Morphology and optical properties of CuAlS<sub>2</sub> crystals prepared using the solid-phase Al and S precursors

Structural, morphological, compositional and optical studies of plasma polymerized 2-furaldehyde amorphous thin films

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