Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits

Avis, Christophe; Jang, Jin

doi:10.3390/membranes12010007

Cited by 11 publications

(11 citation statements)

References 28 publications

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“…Hysteresis characteristics could not be seen for the TFT. This indicates an excellent interface between the c-IGZO and SiO 2 by plasma-enhanced chemical vapor deposition (PECVD) as shown in Figure i . Note that the average density of interface traps ( D it ) for the 20 c-IGZO TFTs is 5.62 × 10 11 cm –2 eV –1 , indicating low interface trap density …”

Section: Results and Discussionmentioning

confidence: 81%

“…This indicates an excellent interface between the c-IGZO and SiO 2 by plasma-enhanced chemical vapor deposition (PECVD) as shown in Figure 2i. 58 Note that the average density of interface traps (D it ) for the 20 c-IGZO TFTs is 5.62 × 10 11 cm −2 eV −1 , indicating low interface trap density. 54 Figure 3f shows the performance statistics of the TFT parameters of the c-IGZO TFTs.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability

Bae

Ali

Islam

et al. 2023

ACS Appl. Mater. Interfaces

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The development of low-cost, high-mobility oxide thin-film transistors (TFTs) with excellent stability is of increasing interest. The coplanar oxide TFTs can be used for high-speed, large-area, and high-resolution displays. Here, we report highly oriented, as-grown crystalline InGaZnO (c-IGZO) with very low oxygen vacancy defects using spray pyrolysis at the substrate temperature of 425 °C. The c-IGZO exhibits a highly oriented, c-axis aligned crystal perpendicular to the substrate with a high mass density of 6.73 g cm −3 without any disordered incubation layer. Its resistivity can be decreased to 0.42 mΩ cm by NF 3 plasma doping, which is essential to achieving high-performance coplanar TFT. We have demonstrated the application of this material to highperformance flexible TFTs. The self-aligned, coplanar c-IGZO TFTs on the polyimide substrate exhibit an average field-effect mobility of 39.60 cm 2 V −1 s −1 , threshold voltage of −1.00 V, subthreshold swing of 0.21 V dec −1 , and on/off current ratio over 10 8 . The ring oscillator and gate driver made of the c-IGZO TFTs exhibit a propagation delay of 8.77 ns/stage and rising/falling times of 648/564 ns, respectively. Therefore, the as-grown c-IGZO by spray pyrolysis has the potential to be utilized as a new oxide semiconductor for the production of low-cost, flexible TFT electronics.

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Section: Results and Discussionmentioning

confidence: 81%

Section: ■ Results and Discussionmentioning

confidence: 99%

As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability

Bae

Ali

Islam

et al. 2023

ACS Appl. Mater. Interfaces

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“…The Si 3 N 4 substrate used in the experiment was divided into three sets, and its roughness was 0.03 μm, 0.1 μm, and 0.4 μm, respectively. It can be seen from sets A–D that the roughness of the diamond film was similar to that of the Si 3 N 4 substrate, and both of them were improved, which may be due to the fact that diamond grains grow in different directions on rough substrates, and the roughness is amplified by the size of diamond grains themselves [ 10 ]. The roughness of the diamond film is proportional to the roughness of the substrate.…”

Section: Resultsmentioning

confidence: 99%

Tribological Performance of Diamond Films with Different Roughnesses of Silicon Nitride Substrates and Carbon Source Concentrations

et al. 2022

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Diamond films were deposited on silicon nitride (Si3N4) substrates with three different roughnesses using the method of hot-filament chemical vapor deposition (HFCVD). The tribological properties of the film were studied by changing the deposition time, deposition distance, and methane (CH4) concentration. The friction coefficient, delamination threshold load, and wear rate of the diamond films were tested and calculated using the reciprocating friction and wear test under dry friction conditions. The results show that, when the deposition time is 12 h, the bonding force of the film is the lowest and the friction coefficient is the largest (0.175, 0.438, and 0.342); the deposition distance has little effect on the friction performance. The friction coefficients (0.064, 0.107, and 0.093) of nano-diamond films (NCD) prepared at a 40 sccm CH4 concentration are smaller than those of micro-diamond films (MCD) prepared at a 16 sccm CH4 concentration. The load thresholds before delamination of Ra 0.4 μm substrate diamond film are as high as 40 N and 80 N, whereas the diamond films deposited on Ra 0.03 μm substrates have lower wear rates (4.68 × 10−4 mm3/mN, 5.34 × 10−4 mm3/mN) and low friction coefficients (0.119, 0.074, 0.175, and 0.064). Within a certain load range, the deposition of a diamond film on a Ra 0.03 μm Si3N4 substrate significantly reduces the friction coefficient and improves wear resistance. Diamond film can improve the friction performance of a workpiece and prolong its service life.

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“…Te N-type semiconductor, SnO 2 (nanostructured tin dioxide), with a bandgap width of nearly 3.6 eV, has a wide range of applications. SnO 2 also possesses excellent optical and electrical properties, making it suitable for photocatalysis, solar cells, gas sensors, transistors, and transparent electrodes, and displays high antibacterial activity [18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Assessment of Structural, Optical, and Antibacterial Properties of Green Sn(Fe : Ni)O2 Nanoparticles Synthesized Using Azadirachta indica Leaf Extract

Aloufi

2023

Bioinorganic Chemistry and Applications

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Metal oxide nanoparticles have attained notable recognition due to their interesting physicochemical properties. Although these nanoparticles can be synthesized using a variety of approaches, the biological method involving plant extracts is preferred since it provides a simple, uncomplicated, ecologically friendly, efficient, rapid, and economical way for synthesis. In this study, the Azadirachta indica leaf extract was used as a reducing agent, and a green process was used to synthesize tin(ferrous: nickel)dioxide (Sn(Fe : Ni)O2) nanoparticles. The synthesized nanoparticles were subjected to characterization by using X-ray diffraction (XRD), energy-dispersive X-ray (EDX) spectroscopy analysis, field emission scanning electron microscopy (FESEM), Fourier transform infrared (FTIR) spectroscopy, dynamic light scattering (DLS), and photoluminescence (PL) measurement. Furthermore, Sn(Fe : Ni)O2 nanoparticles were analyzed for their antimicrobial activity against Gram-positive and Gram-negative organisms including Staphylococcus aureus, Streptococcus pneumoniae, Bacillus subtilis, Klebsiella pneumoniae, Escherichia coli, and Pseudomonas aeruginosa bacterial strains. XRD patterns revealed that Sn(Fe : Ni)O2 nanoparticles exhibited a tetragonal structure. The hydrodynamic diameter of the nanoparticles was 143 nm, as confirmed by the DLS spectrum. The FESEM image showed the spherical form of the synthesized nanoparticles. Chemical composites and mapping analyses were performed through the EDAX spectrum. The Sn–O–Sn and Sn–O stretching bands were 615 cm−1 and 550 cm−1 in the FTIR spectrum, respectively. Various surface defects of the synthesized Sn(Fe : Ni)O2 nanoparticles were identified by photoluminescence spectra. Compared to traditional antibiotics like amoxicillin, the inhibition zone revealed that Sn(Fe : Ni)O2 nanoparticles displayed remarkable antibacterial activity against all tested organisms, indicating the valuable potential of nanoparticles in the healthcare industry.

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Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits

Cited by 11 publications

References 28 publications

As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability

As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability

Tribological Performance of Diamond Films with Different Roughnesses of Silicon Nitride Substrates and Carbon Source Concentrations

Assessment of Structural, Optical, and Antibacterial Properties of Green Sn(Fe : Ni)O2 Nanoparticles Synthesized Using Azadirachta indica Leaf Extract

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