Understanding the Correlation Between Intermetallic Growth, Stress Evolution, and Sn Whisker Nucleation

Jadhav, Nitin; Buchovecky, Eric; Reinbold, Lucine; Kumar, Satish; Bower, Allan F.; Chason, E.

doi:10.1109/tepm.2010.2043847

Cited by 45 publications

(23 citation statements)

References 40 publications

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“…For instance at was shown recently [22] that in the Cu/Sn system after heat treatment at room temperature for 5 days the Sn grain boundaries were decorated by the intermetallic layer (see figure 2 in [22] where the pure Sn layer was removed by selective etching).…”

Section: Summary Of Resultsmentioning

confidence: 99%

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Beke

Langer

Molnár

et al. 2013

Philosophical Magazine

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Kinetic pathways of diffusion and solid state reactions in nanostructured thin film systemsMass transport and solid state reactions in nanocrystalline thin films is reviewed.It is illustrated that diffusion along different grain boundaries, GB, can have important effects on the overall intermixing process between two pure films.These processes can be well characterized by a bimodal GB network, with different (fast and slow) diffusivities. First the atoms migrate along fast GBs (triple junctions) and accumulate at the film surface. These accumulated atoms form a secondary diffusion source for back diffusion along slow boundaries.Thus the GBs of the thin films can be gradually filled up with the diffusing atoms and composition depth profiles reflect the result of these processes. Similar process can be observed in binary systems with intermetallic layers: instead of nucleation and growth of the reaction layer at the initial interface, the reaction takes place in the GBs and the amount of the product phase growths by the motion of its interfaces perpendicular to the GBs. Thus, the entire layer of the pure parent films can be consumed by this GB diffusion induced solid state reaction (GBDIREAC), and a fully homogeneous product layer can be obtained.

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Section: Summary Of Resultsmentioning

confidence: 99%

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Beke

Langer

Molnár

et al. 2013

Philosophical Magazine

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“…The Sn-based layers were grown over Cu layers that were vapor deposited via electron-beam deposition on oxidized Si (100) substrates. Further details of the deposition process can be found in [6,18].…”

Section: Understanding the Mechanisms Behind Imc-induced Stress Evolumentioning

confidence: 99%

“…The measurements of IMC volume were obtained by measuring the change in weight [18,20,21] when the sample is selectively etched to remove the unreacted Sn (without affecting the IMC or underlying Cu). Comparison with the weight of the Sn layer measured at the time of deposition corresponds to the amount that has been incorporated into the Cu 6 Sn 5 IMC.…”

Section: Simultaneous Measurement Of Imc Growth Stress Evolution Anmentioning

confidence: 99%

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Major Driving Forces and Growth Mechanisms for Tin Whiskers

Chason

Kato

Handwerker

et al. 2016

Mitigating Tin Whisker Risks

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“…The formation and growth of intermetallic compounds of Cu-Sn have been extensively studied [4][5][6][7][8][9][10][11][12][13]. In the pioneering works of Tu and his coworkers [3,14,15] the most important conclusions, obtained in thin film systems with Sn and Cu thicknesses in the range of 180-2500 nm, were as follows: i) The reaction between the Cu and Sn started spontaneously during the deposition at room temperature and led to the formation of Cu 6 Sn 5 phase.…”

Section: Introductionmentioning

confidence: 99%

Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu–Sn bilayers at room temperature

Zaka

Shenouda

Fouad

et al. 2016

Microelectronics Reliability

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a b s t r a c tSolid state reaction between nanocrystalline Cu and Sn films was investigated at room temperature by depth profiling with secondary neutral mass spectrometry and by X-ray diffraction. A rapid diffusion intermixing was observed leading to the formation of homogeneous Cu 6 Sn 5 layer. There is no indication of the appearance of the Cu 3 Sn phase. This offers a way for solid phase soldering at low temperatures, i.e. to produce homogeneous Cu 6 Sn 5 intermediate layer of several tens of nanometers during reasonable time (in the order of hours or less). From the detailed analysis of the growth of the planar reaction layer, formed at the initial interface in Sn(100 nm)/Cu(50 nm) system, the value of the parabolic growth rate coefficient at room temperature is 2.3 × 10 −15 cm 2 /s. In addition, the overall increase of the composition near to the substrate inside the Cu film was interpreted by grain boundary diffusion induced solid state reaction: the new phase formed along the grain boundaries and grew perpendicular to the boundary planes. From the initial slope of the composition versus time function, the interface velocity during this reaction was estimated to be about 0.5 nm/h.

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Understanding the Correlation Between Intermetallic Growth, Stress Evolution, and Sn Whisker Nucleation

Cited by 45 publications

References 40 publications

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Kinetic pathways of diffusion and solid-state reactions in nanostructured thin films

Major Driving Forces and Growth Mechanisms for Tin Whiskers

Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu–Sn bilayers at room temperature

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