Understanding the Bandwidth Limitations in Monolithic 1.3 <i>μ</i>m InAs/GaAs Quantum Dot Lasers on Silicon

Hantschmann, Constanze; Vasil'ev, Petr P; Wonfor, A.; Chen, Siming; Liao, Mengya; Seeds, A.J.; Liu, Huiyun; Penty, R.V.; White, I.H.

doi:10.1109/jlt.2018.2884025

Cited by 15 publications

(6 citation statements)

References 41 publications

(78 reference statements)

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“…However, due to the finite intraband relaxation time and gain saturation effect, even a moderate modulation bandwidth has been recognized as difficult to attain for QD lasers. [ 32 ] To date, the best reported modulation bandwidth of 1.3 µm QD DFB lasers grown on native substrates was limited to around 10 GHz, obtained with high‐reflective (HR)/antireflective (AR) coatings to the front and the rear facets, respectively. [ 33 ] Other reported modulation bandwidth of single wavelength QD laser integrated on a Si substrate is in the range of 4–7.5 GHz.…”

Section: Measurement and Analysismentioning

confidence: 99%

High Speed Evanescent Quantum‐Dot Lasers on Si

Wan

Xiang

Guo

et al. 2021

Laser & Photonics Reviews

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Significant improvements in III–V/Si epitaxy have pushed quantum dots (QDs) to the forefront of Si photonics. For efficient, scalable, and multifunctional integrated systems to be developed, a commercially viable solution must be found to allow efficient coupling of the QD laser output to Si waveguides. In this work, the design, fabrication, and characterization of such a platform are detailed. Record‐setting evanescent QD distributed feedback lasers on Si with a 3 dB modulation bandwidth of 13 GHz, a threshold current of 4 mA, a side‐mode‐suppression‐ratio of 60 dB, and a fundamental linewidth of 26 kHz, are reported. The maximum temperature during the backend III/V process is only 200 °C, which is fully compatible with CMOS process thermal budgets. The whole process is substrate agnostic and hence can leverage previous development in QD lasers grown on Si and benefit from the economy of scale. The broadband and versatile nature of the QD lasers and the Si‐on‐insulator low‐loss waveguiding platform can be expanded to build fully functional photonic integrated circuits throughout the O band.

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Section: Measurement and Analysismentioning

confidence: 99%

High Speed Evanescent Quantum‐Dot Lasers on Si

Wan

Xiang

Guo

et al. 2021

Laser & Photonics Reviews

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“…The QD laser's energy structure is modelled as a coupled electronic system consisting of barrier layer, wetting layer and two discrete QD states, i.e. the ground state and excited state, respectively 12,13 . Although the barrier layer is often neglected due to their very small impact on the QD dynamics, we choose to include it for consistency with the QW simulations and due to the importance of dislocationinduced carrier loss in the continuum states.…”

Section: Theoretical Modelmentioning

confidence: 99%

“…where , , ℎ , and  are the maximum QD material gain, the electron and hole ground state occupation probability, and the gain compression factor 12 , and g0 and Ntr are the gain constant and the carrier number per laser section at transparency 21 , respectively.…”

Section: Theoretical Modelmentioning

confidence: 99%

Impact of dislocations in monolithic III-V lasers on silicon: a theoretical approach

Hantschmann

Liu

Tang

et al. 2020

Physics and Simulation of Optoelectronic Devices XXVIII

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The growth of reliable III-V quantum well (QW) lasers on silicon remains a challenge as yet unmastered due to the issue of carrier migration into dislocations. We have recently compared the functionality of quantum dots (QDs) and QWs in the presence of high dislocation densities using rate equation travelling-wave simulations, which were based on 10-m large spatial steps, and thus only allowed the use of effective laser parameters to model the performance degradation resulting from dislocation-induced carrier loss. Here we increase the resolution to the sub-micrometer level to enable the spatially resolved simulation of individual dislocations placed along the longitudinal cavity direction in order to study the physical mechanisms behind the characteristics of monolithic 980 nm In(Ga)As/GaAs QW and 1.3 m QD lasers on silicon. Our simulations point out the role of diffusion-assisted carrier loss, which enables carrier migration into defect states resulting in highly absorptive regions over several micrometers in QW structures, whereas QD active regions with their efficient carrier capture and hence naturally reduced diffusion length show a higher immunity to defects. An additional interesting finding not accessible in a lower-resolution approach is that areas of locally reduced gain need to be compensated for in dislocation-free regions, which may lead to increased gain compression effects in silicon-based QD lasers with limited modal gain.

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“…Simulations and analysis suggest that there are two main reasons for the broadened pulse width: a limited gain from InAs QDs and a high gain compression factor. Therefore, it is believed that the optical applications of Si-based QD lasers could be significantly improved by increasing the number of active layers, introducing the p-doping in the active region as well as modifying the devices' geometry [50] .…”

Section: Fp Lasers On Off Cut Si Substratementioning

confidence: 99%

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

et al. 2019

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In the past few decades, numerous high-performance silicon (Si) photonic devices have been demonstrated. Si, as a photonic platform, has received renewed interest in recent years. Efficient Si-based III-V quantum-dot (QDs) lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of III-V compounds. Although the material dissimilarity between III-V material and Si hindered the development of monolithic integrations for over 30 years, considerable breakthroughs happened in the 2000s. In this paper, we review recent progress in the epitaxial growth of various III-V QD lasers on both offcut Si substrate and on-axis Si (001) substrate. In addition, the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.

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Understanding the Bandwidth Limitations in Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

Cited by 15 publications

References 41 publications

High Speed Evanescent Quantum‐Dot Lasers on Si

High Speed Evanescent Quantum‐Dot Lasers on Si

Impact of dislocations in monolithic III-V lasers on silicon: a theoretical approach

Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

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