Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

Pan, Shujie; Cao, Victoria; Liao, Mengya; Lu, Ying; Liu, Zizhuo; Tang, Mingchu; Chen, Siming; Seeds, A.J.; Liu, Huiyun

doi:10.1088/1674-4926/40/10/101302

Cited by 36 publications

(24 citation statements)

References 74 publications

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“…The well-known practical problem of monolithic integration is the generation of crystalline defects from significant material dissimilarities between III-V materials and Si substrate. These defects act as non-radiative recombination centres and shunt paths in the fabricated device, which significantly degrades the device performance [33]. In addition, the lifetime and maximum operation temperature are also constricted because the defects grow under ageing conditions, attributed to the recombinationenhanced climb process [34].…”

Section: Challenges Of Monolithic Integrationmentioning

confidence: 99%

“…Reproduced with permission from Ref. [33]. Finally, it is worth mentioning that the emission wavelength of InAs QDs is suitable for Si photonics, which avoids the band-edge absorption of Si waveguides.…”

Section: Advantages Of Qdsmentioning

confidence: 99%

“…(B) Bright-field scanning TEM image of TDs. (C) Top-view microscopy image of thermal cracks on the wafer surface.Reproduced with permission from Ref [33]…”

mentioning

confidence: 99%

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Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

et al. 2022

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With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits have emerged as a promising solution for high-performance Intra-/Inter-chip optical communication. However, a lack of a Si-based light source remains to be solved due to the inefficient light-emitting property of Si. To tackle the absence of a native light source, integrating III-V lasers, which provide superior optical and electrical properties, has been extensively investigated. Remarkably, the use of quantum dots as an active medium in III-V lasers has attracted considerable interest because of various advantages, such as tolerance to crystalline defects, temperature insensitivity, low threshold current density and reduced reflection sensitivity. This paper reviews the recent progress of III-V quantum dot lasers monolithically integrated on the Si platform in terms of the different cavity types and sizes and discusses the future scope and application.

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Section: Challenges Of Monolithic Integrationmentioning

confidence: 99%

Section: Advantages Of Qdsmentioning

confidence: 99%

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Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

et al. 2022

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“…→ One of the most promising group-III-V on Si approaches uses InAs/GaAs QDs as laser gain material [14,15,57,58,84,85] for lasing at an emission wavelength of ~1.3 µm. The QDs are grown on several micrometer-thick group-III-V buffer layers to reduce the density of threading dislocations.…”

Section: Group-iii-v On Group-iv Approachesmentioning

confidence: 99%

Light-Emission from Ion-Implanted Group-IV Nanostructures

Brehm

2021

Topics in Applied Physics

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Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of siliconbased microelectronics. However, the lack of practical and low-cost silicon-based monolithic light sources such as light-emitting diodes and, in particular, lasers is the main bottleneck for silicon photonics to become the key technology of the 21 st century. After briefly reviewing the state of the art regarding silicon-based light-emitters, we discuss the challenges and benefits of a highly flexible approach: The epitaxial incorporation of group-IV nanostructures into crystalline silicon. We argue that a paradigm change for group-IV quantum dots (QDs) can be achieved by the intentional incorporation of extended point defects inside the QDs upon low energy ion implantation. The superior light-emission properties from such defect-enhanced quantum dots (DEQDs), our present understanding of their structural formation and light-emission mechanisms will be discussed. We will show that useful electrically-driven devices, such as light-emitting diodes (LEDs) can be fabricated employing optically active DEQDmaterial. These LEDs exhibit exceptional temperature-stability of their light emission properties even up to 100°C, unprecedented for purely group-IV-based optoelectronic devices. Thereafter, we will assess the superior temperature stability of the structural properties of DEQDs upon thermal annealing, the scalability of the light-emission with the DEQD density and passivation schemes to further improve the optical properties. The chapter ends with a discussion of future research directions that will spark the development of this exciting field even further.

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“…However, the performance is limited due to the lattice mismatch and the thermal expansion coefficient difference between III-V materials and Si substrates [3]. The III-V quantum dots (QDs) have ability to overcome these hindrances [9][10][11][12][13][14]. The performance of III-V QD CW laser has been greatly improved in the past few years, which approaches the requirements of on-chip light source in near infrared (NIR) region.…”

Section: Introductionmentioning

confidence: 99%

Progress in semiconductor quantum dots-based continuous-wave laser

et al. 2020

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Continuous-wave (CW) operated laser is a key component for photonic chips. It has been highly desired to develop low-threshold, high-efficiency, long-term operational, low-cost and easily integratable CW laser. As excellent optical gain materials, quantum dots (QDs) have been intensively investigated for on-chip CW lasers owing to their high photoluminescence quantum yields, tunable emission wavelengths and easy integration. Base on the difference of preparation processes, QDs can be classified into epitaxial QDs and solution-processed colloidal QDs (CQDs). In this mini-review, we summarize the research progresses of epitaxial III-V semiconductor QD and solution-processed CQD-based CW lasers. The challenges associated with the realization of CQD CW lasers are discussed in detail. In particular, the emerging perovskite-based CW lasers are highlighted. Finally, a short perspective of QD-based CW lasers is presented.

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Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate

Cited by 36 publications

References 74 publications

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

Recent Progress of Quantum Dot Lasers Monolithically Integrated on Si Platform

Light-Emission from Ion-Implanted Group-IV Nanostructures

Progress in semiconductor quantum dots-based continuous-wave laser

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