Understanding the Anisotropy in the Electrical Conductivity of CuPt_B-type Ordered GaInP Thin Films by Combining In Situ TEM Biasing and First Principles Calculations

Abstract

In this work, the effect of CuPt B ordering on the optoelectronic properties of Ga 0.5 In 0.5 P is studied by combining in situ transmission electron microscopy measurements and density functional theory (DFT) calculations. GaInP layers were grown by metal organic vapor phase epitaxy with a CuPt B single-variant-induced ordering due to the intentional misorientation of the Ge(001) substrate. Moreover, the degree of order was controlled using Sb as the surfactant without changing other growth parameters. The presence of antiphase ordered domain boundaries (APDBs) between the ordered domains is studied as a function of the order parameter. The in situ electrical measurements on a set of samples with controlled degree of order evidence a clear anisotropic electrical conductivity at the nanoscale between the [110] and [1–10] orientations, which is discussed in terms of the presence of APDBs as a function of the degree of order. Additionally, DFT calculations allow to determine the differences in the optoelectronic properties of the compound with and without ordering through the determination of the dielectric function. Finally, the anisotropy of the electrical conductivity for the ordered case is also discussed in terms of the effective mass calculated from the band structure on specific k -paths. By comparing the experimental measurements and the theoretical calculations, two factors have been presented as the main contributors of the electric conductivity anisotropy of CuPt B -type ordered GaInP thin films: antiphase boundaries that separate domains with uniform order (APDBs) and the anisotropy of the effective mass due to the alternating of In/Ga rich planes.

High Uniformity 6-Inch InGaP Epitaxial Growth

“…This suggests that increasing the growth temperature can significantly improve the doping effectiveness of Si 2 H 6 . The difference between ECV concentration and Hall concentration shrinks as the temperature rises, demonstrating that the doping effectiveness of Si 2 H 6 and its activation efficiency rises with the temperature [20][21][22][23][24][25].…”

Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity

“…Additionally, the epitaxial growth conditions of InGaP influence its ordering and, consequently, its bandgap and other properties, expanding the possibilities of its application. These features render InGaP a versatile material in optoelectronics, including solar cells and detectors, and in high-frequency electronics like high-speed integrated circuits and microwave devices, offering vast application prospects [6][7][8][9][10][11][12][13][14][15]. In the field of heterojunction structures, InGaP/GaAs heterojunctions hold significant advantages over the traditional AlGaAs/GaAs heterojunctions.…”

Clean and Hydrogen‐Adsorbed AlInP(001) Surfaces: Structures and Electronic Properties

“…[15,16] In case of GaInP, the CuPt-type ordering has been found to cause anisotropic effects in the electrical and optical properties. [17,18] Very recently, some models for clean AlInP(001) surfaces were established, which show that structures different from the ones known from binary III-V(001) surfaces may occur. [19] However, the calculations in the study by Ruiz Alvarado et al [19] are restricted to clean surfaces.…”

“…[ 15,16 ] In case of GaInP, the CuPt‐type ordering has been found to cause anisotropic effects in the electrical and optical properties. [ 17,18 ]…”