Understanding of Passivation Mechanism in Heterojunction c-Si Solar Cells

Kondo, Michio; Wolf, Stefaan De; Fujiwara, Hiroyuki

doi:10.1557/proc-1066-a03-01

Cited by 15 publications

(7 citation statements)

References 23 publications

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“…For heterojunction or passivating contact structures, the design criteria and boundary conditions are markedly different. These contact structures are typically formed using a stack of layers: (1) A passivation layer such as amorphous silicon or a hydrogenated tunnel layer of SiO 2 [13][14][15][16][17][18]. (2) A carrier-selective material which induces selectivity through (a combination of) high doping (e.g.…”

Section: Introductionmentioning

confidence: 99%

Atomic-layer-deposited Al-doped zinc oxide as a passivating conductive contacting layer for n+-doped surfaces in silicon solar cells

Macco

Loo

Dielen

et al. 2021

Solar Energy Materials and Solar Cells

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Section: Introductionmentioning

confidence: 99%

Atomic-layer-deposited Al-doped zinc oxide as a passivating conductive contacting layer for n+-doped surfaces in silicon solar cells

Macco

Loo

Dielen

et al. 2021

Solar Energy Materials and Solar Cells

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“…As discussed in our former work, the coexistence of thermal annealing, hydrogenation, and P doping effects during the Cat-doping process leads to the improvement in the passivation quality. Both the thermal annealing effect and hydrogenation effect during the process help to saturate the dangling bonds and therefore improve the passivation in the stack . Meanwhile, P doping may create a shallow highly doped layer at the surface and acts as FSF, which also improves the passivation.…”

Section: Discussionmentioning

confidence: 99%

“…Both the thermal annealing and hydrogenation effect during the process help to saturate the dangling bonds and therefore improve the passivation in the stack. 38 Meanwhile, P doping may create a shallow highly doped layer at the surface and acts as FSF, which also improves the passivation. All these three effects together can be considered for the improvement of passivation quality of the stack and finally result in an iV OC of 741 mV even without a-Si:H(n) layer.…”

Section: ■ Discussionmentioning

confidence: 99%

Phosphorus Catalytic Doping on Intrinsic Silicon Thin Films for the Application in Silicon Heterojunction Solar Cells

Liu

Pomaska

Duan

et al. 2020

ACS Appl. Mater. Interfaces

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Parasitic absorption and limited fill factor (FF) brought in by the use of amorphous silicon layers are efficiency-limiting challenges for the silicon heterojunction (SHJ) solar cells. In this work, postdeposition phosphorus (P) catalytic doping (Cat-doping) on intrinsic amorphous silicon (a-Si:H(i)) at a low substrate temperature was carried out and a P concentration of up to 6 × 1021 cm–3 was reached. The influences of filament temperature, substrate temperature, and processing pressure on the P profiles were systemically studied by secondary-ion mass spectrometry. By replacing the a-Si:H(n+er with P Cat-doping of an a-Si:H(i) layer, the passivation quality was improved, reaching an iV OC of 741 mV, while the parasitic absorption was reduced, leading to an increase in J SC by ∼1 mA/cm2. On the other hand, the open-circuit voltage and the FF of a conventional SHJ solar cell (with the a-Si:H(n) layer) can be improved by adding a Cat-doping process on the a-Si:H(i) layer, resulting in an increase in FF by 4.7%abs and in efficiency by 1.5%abs.

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“…[13] The a-Si:H(i) (passivation) layer has a low defect concentration and a high hydrogen concentration, [14] effectively saturating the silicon dangling bonds and thus achieving good chemical passivation of the critical interface. [15] Since then, this bilayer structure (as shown in Figure 1a) has become the state-of-the-art enabling the success story of SHJ and becoming one of the most efficient and industrially relevant types of wafer-based silicon solar cells.…”

Section: Introductionmentioning

confidence: 99%

Enhancing the Selectivity and Transparency of the Electron Contact in Silicon Heterojunction Solar Cells by Phosphorus Catalytic Doping

Duan,

Mains,

Gebrewold

et al. 2023

Adv Funct Materials

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An intrinsic hydrogenated amorphous silicon (a‐Si:H(i)) film and a doped silicon film are usually combined in the heterojunction contacts of silicon heterojunction (SHJ) solar cells. In this work, a post‐doping process called catalytic doping (Cat‐doping) on a‐Si:H(i) is performed on the electron selective side of SHJ solar cells, which enables a device architecture that eliminates the additional deposition of the doped silicon layer. Thus, a single phosphorus Cat‐doping layer combines the functions of two other layers by enabling excellent interface passivation and high carrier selectivity. The overall thinner layer on the window side results in higher spectral response at short wavelengths, leading to an improved short‐circuit current density of 40.31 mA cm−2 and an efficiency of 23.65% (certified). The cell efficiency is currently limited by sputter damage from the subsequent transparent conductive oxide fabrication and low carrier activation in the a‐Si:H(i) with Cat‐doping. Numerical device simulations show that the a‐Si:H(i) with Cat‐doping can provide sufficient field effect passivation even at lower active carrier concentrations compared to the as‐deposited doped layer, due to the lower defect density.

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Understanding of Passivation Mechanism in Heterojunction c-Si Solar Cells

Cited by 15 publications

References 23 publications

Atomic-layer-deposited Al-doped zinc oxide as a passivating conductive contacting layer for n+-doped surfaces in silicon solar cells

Atomic-layer-deposited Al-doped zinc oxide as a passivating conductive contacting layer for n+-doped surfaces in silicon solar cells

Phosphorus Catalytic Doping on Intrinsic Silicon Thin Films for the Application in Silicon Heterojunction Solar Cells

Enhancing the Selectivity and Transparency of the Electron Contact in Silicon Heterojunction Solar Cells by Phosphorus Catalytic Doping

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