Underlayer designs to enhance the performance of EUV resists

Xu, Hao; Blackwell, James M.; Younkin, Todd R.; Min, Ke

doi:10.1117/12.814223

Cited by 25 publications

(19 citation statements)

References 13 publications

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“…Added benefits to underlayer stacks can include LER reduction of the resist patterns, increased process latitude and improved etch selectivity during the pattern transfer process. 24 The propagation of striations or roughness from the resist into the hardmask during the pattern transfer process is a concern. This is thought to be the result of having inadequate resist thicknesses and/or inadequate etch resistance.…”

Section: Underlayer Contribution To Roughnessmentioning

confidence: 99%

Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films

et al. 2010

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Line edge roughness evolutions in EUV resist patterns are investigated. Three dimensional scanning electron microscopy images show the pattern sidewall roughness to be highly anisotropic and the roughness to be propagating from the resistsubstrate interface up the resist pattern sidewall. In ultrathin resist films, (film thickness ca. 100 nm and below) roughness is found to be fully correlated from the resist-substrate interface to the resist-air interface. This behavior is seen regardless of the resist platforms being used.Underlayer stack roughness contributions to the pattern sidewall roughness leading to resist LER were examined and no correlations between the two were found. At the same time, the chemical properties of the underlayer stacks are shown to have strong influences on the resist roughness and process performance. Exact mechanisms behind this are not clearly understood at present.

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Section: Underlayer Contribution To Roughnessmentioning

confidence: 99%

Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films

et al. 2010

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“…In particular, the EUV community has been publishing extensively on the use of bottom coats that substantially improve their materials performance 17,18 . Although there are defect questions that make these approaches less attractive, they are areas that one must consider if we are going to approach the needed capabilities of the future.…”

Section: Ancillary Chemicals and Processes Including CDLmentioning

confidence: 99%

Advanced electron beam resist requirements and challenges

Jamieson¹,

Kim²,

Olson³

et al. 2011

SPIE Proceedings

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As photomask minimum feature size requirements continue to shrink, resist resolution limitations and their tradeoffs with exposure dose are critical factors. Recently, nearly every node needs a new electron beam resist, customized for exposure dose requirements while simultaneously meeting resolution specifications. Intel Mask Operations has an active program focused on screening new electron beam resists and processes. We discuss the performance metrics we use to evaluate materials and discuss the relative capabilities of the latest resists. We present fundamental resist metrics (resolution, LER and dose) as well as manufacturing process sensitivities.

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“…The use of underlayers to enhance the imaging properties of EUV resist is now an area of active exploration [14][15][16] sensitivity. Looking at the details of the resist to substrate interface [17], has also suggested that interface properties may be playing a significant role in LER and thus that underlayers might be able to mitigate these effects.…”

Section: Interface Effectsmentioning

confidence: 99%