Un système à commande digitale pour l'étude des dispositifs semiconducteurs par le balayage d'un faisceau de lumière laser

Stanciu, Gh. A.; Popescu, Irina; Stoichita, Catalin

doi:10.1051/rphysap:0198000150105500

Cited by 6 publications

(2 citation statements)

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“…The first applications of OBIC microscopy were demonstrated during 1960s–1980s. During this period, several seminal works demonstrated the efficiency and importance of OBIC imaging technique in elucidating the nonuniformities and defects in semiconductors, for example, grain boundaries, inversion layers, dislocations, or recombination centers and characteristic properties of semiconductor devices, including inversion channel formation, minority carrier lifetime, surface recombination velocity, and carrier generation depth (DiStefano & Cuomo, 1977; Gannaway & Wilson, 1978; Haberer, 1966; Inoue et al, 1979; Potter & Sawyer, 1966; Sawyer & Berning, 1976; Sheppard, 1989; Sheppard et al, 1978; Stanciu et al, 1980; Suzuki & Matsumoto, 1975; Tihanyi & Pásztor, 1967). Over the last few years, tremendous advances occurred in both the optics and electronics used in OBIC instrumentation, that enabled non‐destructive characterization of semiconductor devices with unprecedented spatiotemporal resolution, as discussed in the following sections (Finkeldey et al, 2017; Takeshita et al, 2018).…”

Section: Introductionmentioning

confidence: 99%

“…The first applications of OBIC microscopy were demonstrated during 1960s-1980s. During this period, several seminal works demonstrated the efficiency and importance of OBIC imaging technique in elucidating the nonuniformities and defects in semiconductors, for example, grain boundaries, inversion layers, dislocations, or recombination centers and characteristic properties of semiconductor devices, including inversion channel formation, minority carrier lifetime, surface recombination velocity, and carrier generation depth (DiStefano & Cuomo, 1977;Haberer, 1966;Inoue et al, 1979;Potter & Sawyer, 1966;Sawyer & Berning, 1976;Sheppard, 1989;Sheppard et al, 1978;Stanciu et al, 1980;Suzuki & Matsumoto, 1975;Tihanyi & Pásztor, 1967).…”

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confidence: 99%

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An insight into optical beam induced current microscopy: Concepts and applications

Zhuo

Banik

Kao

et al. 2022

Microscopy Res & Technique

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Laser scanning optical beam induced current (OBIC) microscopy has become a powerful and nondestructive alternative to other complicated methods like electron beam induced current (EBIC) microscopy, for high resolution defect analysis of electronic devices. OBIC is based on the generation of electron–hole pairs in the sample due to the raster scanning of a focused laser beam with energy equal or greater than the band gap energy and synchronized detection of resultant current profile with respect to the beam positions. OBIC is particularly suitable to localize defect sites caused by metal–semiconductor interdiffusion or electrostatic discharge (ESD). OBIC signals, thus, are capable of revealing the parameters/factors directly related to the reliability and efficiency of the electronic device under test (DUT). In this review, the basic principles of OBIC microscopy strategies and their notable applications in semiconductor device characterization are elucidated. An overview on the developments of OBIC microscopy is also presented. Specifically, the recent progresses on the following three OBIC measurement strategies have been reviewed, which include continuous laser based single photon OBIC, pulsed laser based single photon OBIC, and multiphoton OBIC microscopy for three‐dimensional mapping of photocurrent response of electronic devices at high spatiotemporal resolution. Challenges and future prospects of OBIC in characterizing complex electronic devices are also discussed. Highlights Characterization of electronic device quality is of paramount importance. Optical beam induced current (OBIC) microscopy offers spatially resolved mapping of local electronic properties. This review presents the principle and notable applications of OBIC microscopy.

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