2020
DOI: 10.1016/bs.aiep.2019.11.001
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Scanning optical microscopy

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Cited by 13 publications
(5 citation statements)
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“…Notably, for a homogenous specimen, the resultant OBIC image appears to be uniformly bright. In contrast, the presence of different defect or failure sites, including dislocations, trapping centers, grain boundaries, and buried diffusion regions, results in the localized variation of the junction current enabling their visualization in the OBIC images (Sheppard, 1989;Xu & Denk, 1999). Furthermore, OBIC can also be used to monitor minority carrier diffusion length, junction depth, surface recombination velocity, and so forth (Sheppard, 1989).…”
Section: Basic Principle Of Obic Microscopymentioning
confidence: 99%
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“…Notably, for a homogenous specimen, the resultant OBIC image appears to be uniformly bright. In contrast, the presence of different defect or failure sites, including dislocations, trapping centers, grain boundaries, and buried diffusion regions, results in the localized variation of the junction current enabling their visualization in the OBIC images (Sheppard, 1989;Xu & Denk, 1999). Furthermore, OBIC can also be used to monitor minority carrier diffusion length, junction depth, surface recombination velocity, and so forth (Sheppard, 1989).…”
Section: Basic Principle Of Obic Microscopymentioning
confidence: 99%
“…In contrast, OBIC is a very simple and easy to use technique that can be conducted with relatively simple instrumentation in open air condition without any sample preparation prior to measurement. Due to such advantages, the OBIC microscopy have re-emerged as a novel technique that provides a non-destructive method for inspecting semiconductor devices in failure analysis, especially for solar cells, light emitting diodes and laser diodes, when compared with EBIC microscopy (Kao et al, 2002;Sheppard, 1989). Presently, OBIC microscopy is one of the most powerful non-destructive techniques capable of providing high resolution three-dimensional mapping of photocurrent response of electronic devices, which can further be used for the analysis of their performance and localize structural/crystallographic defects as well as ESD induced defect sites (Essely et al, 2007;Yang et al, 2010).…”
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confidence: 99%
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“…Optical microscopy, X-ray computer-aided tomography, infrared thermography, and scanning acoustic microscopy (SAM) are the commonly utilized techniques owing to their short time consumption and low sample pretreatment requirement as compared to electron microscopy (Sheppard, 2020 ; Bertocci et al 2019 ). The most striking advantage of SAM is its ability to inspect the sample subsurfaces layer by layer simultaneously with an excellent penetrating power of the ultrasonic waves while scanning the material surface (Morokov and Levin, 2019 ; Brand et al 2014 ).…”
Section: Introductionmentioning
confidence: 99%
“…Here, we explore the use of an annulus to engineer the excitation PSF to smaller lateral dimensions. Past studies have established that an annular aperture generates an excitation PSF with a narrower central lobe but with more pronounced lateral side lobes and axial lobes [29][30][31] . In theory, a 1.75 fold improved lateral resolution over widefield microscopy should be possible 29 .…”
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confidence: 99%