Ultrawide-bandgap semiconductor of carbon-based materials for meta-photonics-heterostructure, lasers, and holographic displays

Abbas, Arwa Saud

doi:10.1007/s43673-022-00073-0

Cited by 6 publications

(3 citation statements)

References 74 publications

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“…Carbon-based semiconductor materials, with the hall mobility was > 20 cm 2 /vs and carrier concentration of ~ 1021 cm -3 were achieved. The results indicate CM incorporation for laser diode applications [50], [51].…”

Section: Electrical Measurement Using the Hall Effectmentioning

confidence: 96%

Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes

Abbas,

Hiazaa,

Jalalah

et al. 2023

Adv. Nan. Res.

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The present research addresses the synthesis of carbon materials thin films by RF-PECVD in N2/CH4 gas mixture. Carbon materials film was formed at 40/48 sccm of CH4/N2 of the total gas flow rate ratio CH4/CH4+N2 = 0.45 and 200/100 W HF/LF power at a deposition temperature of 350 oC and 1000 mTorr pressure. Then, post-annealing of carbon materials film took place at 400 oC by means of RTA under N2 flow. The formation of carbon nanostructures was investigated by scanning electron microscopy, energy dispersive X-ray, Raman spectroscopy, and atomic force microscopy, respectively. AFM shows that the films consisted of nanocrystalline grains. The surface morphology and structural characteristics of materials were studied as a gas flow function and substrate temperature. EDX results indicated the carbon presence, and Raman spectroscopy analysis revealed two broad bands: D-band 1381.64 cm−1 and G-band 1589.42 cm−1. The temperature-dependent post-annealing of carbon materials plays a key role in the graphite crystallites growth at high substrate temperatures. Our results indicate carbon materials incorporation for laser diode applications.

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Section: Electrical Measurement Using the Hall Effectmentioning

confidence: 96%

Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes

Abbas,

Hiazaa,

Jalalah

et al. 2023

Adv. Nan. Res.

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“…Semiconductor quantum wells (QWs) and superlattices (SLs) have formed the basis of fabricating many modern electronic and optoelectronic devices, including the light-emitting diodes (LEDs), laser diodes (LDs), field-effect transistors (FETs), etc. [1][2][3][4][5][6][7][8][9][10]. Compared with II-VI and III-V compounds, the epitaxial growth of C-based zinc-blende (zb) IV-IV (XC with X = Si, Ge, Sn) binary materials, alloys and heterostructures (i.e., QWs, SLs, etc.)…”

Section: Introductionmentioning

confidence: 99%

“…of higher thermal conductivity, wider electronic energy bandgaps, and higher mechanical strength have recently stimulated interest among the technologists to design different types of device structures (e.g., meta-photonic heterostructures, holographic displays, lasers, etc.) and for the scientists to evaluate their basic traits [1][2][3][4][5][6][7][8][9][10]. The progress in device engineering has Solids 2023, 4 288 demanded careful selection of the C-based wide-bandgap E g (SiC = 2.42 eV; GeC = 1.52 eV) materials which maintain physical properties both at elevated temperatures and higher radiation levels [2][3][4][5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices

Talwar,

Becla

2023

Solids

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Systematic results of lattice dynamical calculations are reported as a function of m and n for the novel (SiC)m/(GeC)n superlattices (SLs) by exploiting a modified linear-chain model and a realistic rigid-ion model (RIM). A bond polarizability method is employed to simulate the Raman intensity profiles (RIPs) for both the ideal and graded (SiC)10-Δ/(Si0.5Ge0.5C)Δ/(GeC)10-Δ/(Si0.5Ge0.5C)Δ SLs. We have adopted a virtual-crystal approximation for describing the interfacial layer thickness, Δ (≡0, 1, 2, and 3 monolayers (MLs)) by selecting equal proportions of SiC and GeC layers. Systematic variation of Δ has initiated considerable upward (downward) shifts of GeC-(SiC)-like Raman peaks in the optical phonon frequency regions. Our simulated results of RIPs in SiC/GeC SLs are agreed reasonably well with the recent analyses of Raman scattering data on graded short-period GaN/AlN SLs. Maximum changes in the calculated optical phonons (up to ±~47 cm−1) with Δ = 3, are proven effective for causing accidental degeneracies and instigating localization of atomic displacements at the transition regions of the SLs. Strong Δ-dependent enhancement of Raman intensity features in SiC/GeC are considered valuable for validating the interfacial constituents in other technologically important heterostructures. By incorporating RIM, we have also studied the phonon dispersions [ωjSLq→] of (SiC)m/(GeC)n SLs along the growth [001] as well as in-plane [100], [110] directions [i.e., perpendicular to the growth]. In the acoustic mode regions, our results of ωjSLq→ have confirmed the formation of mini-gaps at the zone center and zone edges while providing strong evidences of the anti-crossing and phonon confinements. Besides examining the angular dependence of zone-center optical modes, the results of phonon folding, confinement, and anisotropic behavior in (SiC)m/(GeC)n are compared and contrasted very well with the recent first-principles calculations of (GaN)m/(AlN)n strained layer SLs.

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Descripting e + and Weyl fermion as beam/current for pump/injection semiconductor devices

Abbas

2024

APL Energy

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Based on the demand for an improvement in various corpuscle types of current injection, the objective of this technique is to provide a new concept of carrier generators for optoelectronic pump and injection devices. This investigation is conducted to improve current injection by using a particle other than the electron. The idea was conceived from condensed matter physics for a technique to implement positron for carrier transport in semiconductors with the source based on localized emissions. A radioactive source such as 22Na is incident on a tungsten vane moderator, thus having positive electrons flowing and tunneling as well as a laser-driven high-quality positron into semiconductor-based devices. In addition, tantalum arsenide (TaAs) hosting Weyl particles has been discovered to hold significant potential for cutting-edge technological uses. Injection of different carriers and their behavior in semiconductors will lead to the emergence of solid state optoelectronics with different carrier injections that possesses a high energy (100–500 keV) and the possibility of maximum energy that is approximately several tens of megaelectron volts. Significantly, these various carrier sources have a larger range of operational settings and output characteristics due to their various underlying emission principles, thus obtaining a greater kinetic energy for a positron. The transformation to Weyl fermions carries electric charge via a device far more quickly than ordinary electrons, therefore unlocking the potential of new materials with unusual transport properties.

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Ultrawide-bandgap semiconductor of carbon-based materials for meta-photonics-heterostructure, lasers, and holographic displays

Cited by 6 publications

References 74 publications

Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes

Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes

Evaluating Phonon Characteristics by Varying the Layer and Interfacial Thickness in Novel Carbon-Based Strained-Layer Superlattices

Descripting e + and Weyl fermion as beam/current for pump/injection semiconductor devices

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