Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes
Arwa Saud Abbas,
Abdulrhman Faraj M Hiazaa,
Abdullah Jalalah
et al.
Abstract:The present research addresses the synthesis of carbon materials thin films by RF-PECVD in N2/CH4 gas mixture. Carbon materials film was formed at 40/48 sccm of CH4/N2 of the total gas flow rate ratio CH4/CH4+N2 = 0.45 and 200/100 W HF/LF power at a deposition temperature of 350 oC and 1000 mTorr pressure. Then, post-annealing of carbon materials film took place at 400 oC by means of RTA under N2 flow. The formation of carbon nanostructures was investigated by scanning electron microscopy, energy dispersive X-… Show more
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