Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes

Bai, Xiaogang; McIntosh, Dion; Liu, Han-Din; Campbell, Joe C.

doi:10.1109/lpt.2007.906830

Cited by 64 publications

(22 citation statements)

References 11 publications

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“…Most scattering systems have used conventional devices as light sources and detectors [105]- [107]. In recent decade, semiconductor devices in the UV range have been developed for LEDs sources and avalanche photodiodes (APD) [108,109]. The first ever LED-based OSC research was reported in [110]- [112].…”

Section: Optical Scattering Communicationsmentioning

confidence: 99%

Emerging Optical Wireless Communications-Advances and Challenges

Ghassemlooy

Arnon

Uysal

et al. 2015

IEEE J. Select. Areas Commun.

388

175

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Section: Optical Scattering Communicationsmentioning

confidence: 99%

Emerging Optical Wireless Communications-Advances and Challenges

Ghassemlooy

Arnon

Uysal

et al. 2015

IEEE J. Select. Areas Commun.

388

175

View full text Add to dashboard Cite

“…GM operation [29] can be measured using passive-quench [30], activequenching [31], and time-gated modes [32] of operation. GM single-photon APDs (SPADs) operating in the UV have recently been demonstrated using homoepitaxial 4H-SiC p-i-n structures [33,34]. UV photon counting with GaN APDs has been reported by McIntosh et al, [35] and they have demonstrated and reported a 4.…”

Section: Article In Pressmentioning

confidence: 99%

“…[33] and uses a 265 nm pulsed laser source operating at 7.3 kHz and a pulse width of 400 ps. Using variable attenuators, the average number of photons per pulse was limited to 0.1À0.2 to ensure Poisson statistics [33]. As shown in Fig.…”

Section: Article In Pressmentioning

confidence: 99%

Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

Dupuis

Ryou

Shen

et al. 2008

Journal of Crystal Growth

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“…Small-size SiC avalanche photodiodes have been previously demonstrated with a high single photon detection efficiency [3][4][5][6] and high solar photon rejection ratio [7]. In this work we present results of the integration of avalanche photodiode arrays and photomultipliers with thin film stack optical filters.…”

Section: Introductionmentioning

confidence: 96%

Silicon carbide photomultipliers and avalanche photodiode arrays for ultraviolet and solar-blind light detection

et al. 2009

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Silicon carbide is known for its large bandgap and suitability to make highly sensitive ultraviolet photo-detectors. These devices show appreciable quantum efficiencies in the 240 nm -350 nm wavelength range in combination with low dark currents. We present recent results on 4H-SiC avalanche photodiode arrays and SiC-based solid-state photomultiplier arrays suitable for ultraviolet and solar-blind light detection. A novel SiC-based photomultiplier array was demonstrated. Additional solar-blind optical filter allowed achieving a solar photon rejection ratio of more than 10 6 in combination with 40% quantum efficiency at 280 nm. More than 50% of pixels of the array have demonstrated low dark count rates in the range of several kHz and single photon detection efficiencies of more than 30% at 266 nm in the solar-blind wavelengths range. The photomultiplier array operating in Geiger mode has demonstrated a linearly increasing response with an increase in number of incident photons. We report on the electrical and optical characteristics of solar-blind 4H-SiC avalanche photodiode arrays and photomultipliers.

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Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes

Cited by 64 publications

References 11 publications

Emerging Optical Wireless Communications-Advances and Challenges

Emerging Optical Wireless Communications-Advances and Challenges

Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

Silicon carbide photomultipliers and avalanche photodiode arrays for ultraviolet and solar-blind light detection

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