Ultraviolet radiation induced defect creation in buried SiO2 layers

Devine, R. A. B.; Leray, J.L.; Margail, J.

doi:10.1063/1.106042

Cited by 50 publications

(14 citation statements)

References 11 publications

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“…[45][46][47] This excess Si leads to an increased density of neutral oxygen vacancies, tSi-Sit, and it is generally accepted that these centers may serve as E′ and tSi-H bond precursors. Indeed, two processes have been postulated at different temperatures.…”

Section: H 2 Cracking At An Oxygen Vacancymentioning

confidence: 99%

H₂ Cracking at SiO₂ Defect Centers

et al. 2000

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The interaction of H 2 with the defect sites of the SiO 2 surface has been studied by means of gradient-corrected density functional theory calculations on cluster models. The mechanism of hydrogen dissociation, the energy of reactants and products, and the corresponding activation energies and transition states have been determined for the following defect sites: Si singly occupied sp 3 dangling bonds (E′ centers), tSi • ; nonbridging oxygen centers (NBO), tSi-O • ; divalent Si, dSi:; and neutral oxygen vacancies, tSi-Sit. H 2 cracking on the NBO sites is exothermic by ∼0.4 eV and has an energy barrier of ∼0.1 eV (or less considering nonadiabatic effects) which suggest the occurrence of the process even at low temperature. On Si dangling bonds the formation of tSi-H and neutral H atom is endothermic and occurs with an activation energy of less than 0.5 eV; the reaction can occur at room temperature. The interaction of molecular hydrogen with the diamagnetic oxygen deficient centers, dSi: and tSi-Sit, leads to the formation of stable tSi-H groups with exothermic processes and relatively high activation energies of about 2 eV. Thus, H 2 cracking is predicted to occur at room temperature on paramagnetic defects and only at high temperatures on the diamagnetic centers.

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Section: H 2 Cracking At An Oxygen Vacancymentioning

confidence: 99%

H₂ Cracking at SiO₂ Defect Centers

et al. 2000

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“…[1][2][3][4][5][6][7][8] Electron spin resonance ͑ESR͒ always gives useful information on the structure of paramagnetic defects such as EЈ center ͑wSi•; ''w'' and ''•'' denote bonds with three separate oxygens and an unpaired electron, respectively͒ and the nonbridging oxygen hole center ͑wSi-O•͒. [9][10][11] Diamagnetic defects, which act as precursors of paramagnetic centers, cannot be detected by ESR.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

Seol

Ieki

Ohki

et al. 1996

Journal of Applied Physics

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Chemical etch rates in HF solutions as a function of thickness of thermal SiO2 and buried SiO2 formed by oxygen implantationDefects in buried SiO 2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence ͑PL͒ excited by KrF ͑5.0 eV͒ excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO 2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide.

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“…In SI-MOX material, nearly all of the defects in the buried oxide are due to excess silicon, indicating that the post-implantation, high temperature anneal step used to form the buried oxide is the source of the defects [18]. The primary defect identified by EPR is the E 0 c center [19][20][21][22][23][24][25], similar to that for gate oxides. However, the variation in the number of E 0 c centers does not appear to correlate as closely with the net positive oxide-trap charge density in buried oxides as it typically does in thermal oxides.…”

Section: Buried Oxidesmentioning

confidence: 90%