Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

Seol, Kwang Soo; Ieki, A.; Ohki, Yoshimichi; Nishikawa, Hiroyuki; Tachimori, M.

doi:10.1063/1.360845

Cited by 40 publications

(18 citation statements)

References 30 publications

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“…From photoluminescence studies, oxygen deficiency centers (ODCs) 73 have been shown to produce emission bands 4.3 eV above the valence band of SiO 2 . 74,75,76,77 Defects in SiO 2 are also observed in the DUV photoemission spectra of glassy SiO 2 and quartz implanted with metals ions. 78,79 In Fig.…”

Section: Resultsmentioning

confidence: 86%

Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy

et al. 2017

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Tailoring band alignment layer-by-layer using heterojunctions of two-dimensional (2D) semiconductors is an attractive prospect for producing next-generation electronic and optoelectronic devices that are ultra-thin, flexible, and efficient. 2D layers of transition metal dichalcogenides (TMDs) in laboratory devices have already shown favorable characteristics for electronic and optoelectronic applications. Despite these strides, a systematic understanding of how band alignment evolves from monolayer to multilayer structures is still lacking in experimental studies, which hinders development of novel devices based on TMDs. Here we 2 report on the local band alignment of monolayer, bilayer, and tri-layer MoS 2 on a 285-nm-thick SiO 2 substrate using a new approach to probe the occupied electronic states based on photoemission electron microscopy and deep ultraviolet light. Local measurements of the vacuum level and the valence band edge at the Brillouin zone center show that the addition of layers to monolayer MoS 2 increases the relative work function, and pushes the valence band edge toward the vacuum level. We also deduced n-type doping of few-layer MoS 2 and type-I band alignment across monolayer-to-bilayer and bilayer-to-trilayer lateral junctions. Conducted in isolation from environmental effects owing to the vacuum condition of the measurement and an insulating SiO 2 substrate, this study shows a new metrology to uncover electronic properties intrinsic to MoS 2 semiconducting layers and emerging 2D crystals alike.

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Section: Resultsmentioning

confidence: 86%

Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy

et al. 2017

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“…However, similar luminescence has not been observed, as reported in our previous paper. 26 Moreover, as mentioned above, it is more reasonable to assume that PLs ␥ HS and ␥ ZS are intrinsic to their respective silicates, that the dependence of the ratio ͑␥ HS / ␤ HS ͒ on x is fairly similar to that of the ratio ͑␥ ZS / ␤ ZS ͒ is supportive to this assumption.…”

Section: Resultsmentioning

confidence: 91%

“…26 This PL has a very long lifetime of ϳ10 ms and two clear PLE peaks around 5.0 and 7.6 eV. It is clear that the present PLs ␤ HS and ␤ ZS do not have such a slow decay component.…”

Section: Resultsmentioning

confidence: 92%

Mechanisms of several photoluminescence bands in hafnium and zirconium silicates induced by ultraviolet photons

Ito

Kato

Ohki

2006

Journal of Applied Physics

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Two photoluminescence (PL) components with peaks around 2.8–3.0 and 3.8eV were induced in hafnium silicates by the irradiation of synchrotron radiation photons at 8.0eV, while two similar ones were induced in zirconium silicates around 2.7–3.0 and 3.8eV. By examining PL excitation spectra, PL decay characteristics, and vacuum-ultraviolet absorption spectra, it is assumed that the origin of the PL component around 2.7(2.8)–3.0eV is the same as that of the PL component around 2.7–2.9eV observed in hafnia and zirconia. In the band gaps of hafnium silicates, zirconium silicates, hafnia, and zirconia, luminescent centers responsible for the PL components around 2.7(2.8)–2.9(3.0)eV have their respective upper and lower states with a certain constant energy difference that does not change by the hafnium or zirconium content. Electrons (or holes) excited by ultraviolet photons to tail states at the band edges first relax to the upper state of the luminescent centers, and then they are deexcited to the lower state, which induces the PL components.

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“…Although ion beam synthesis has been widely reported, [6][7][8] the origin of visible luminescence from ion beam synthesized Si nanocrystals has so far been unclear, primarily due to a lack of distinction between luminescence originating from matrix defects and luminescence originating from nanocrystals. It is well known [9][10][11] that defects in SiO 2 display luminescence at various energies including the visible range, so the interpretation of luminescence spectra without distinction of the contribution from defects can be very misleading.…”

mentioning

confidence: 99%

Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2

Min

Shcheglov

Yang

et al. 1996

Applied Physics Letters

382

164

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Two sources of room temperature visible luminescence are identified from SiO 2 films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe ϩ -implanted SiO 2 films and SiO 2 films containing Si nanocrystals, a luminescence feature attributable to defects in the SiO 2 matrix is unambiguously identified. Hydrogen passivation of the films selectively quenches the matrix defect luminescence, after which luminescence attributable to Si nanocrystals is evident, with a lifetime on the order of milliseconds. The peak energy of the remaining luminescence attributable to Si nanocrystals ''redshifts'' as a function of different processing parameters that might lead to increased nanocrystal size and the intensity is directly correlated to the formation of Si nanocrystals. Upon further annealing hydrogen-passivated samples at low temperatures ͑Ͻ500°C͒, the intensity of nanocrystal luminescence increases by more than a factor of 10.

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Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

Cited by 40 publications

References 30 publications

Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy

Layer dependence of the electronic band alignment of few-layer MoS2 on SiO2 measured using photoemission electron microscopy

Mechanisms of several photoluminescence bands in hafnium and zirconium silicates induced by ultraviolet photons

Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2

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