Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111)

Krügener, Jan; Osten, H. J.; Fissel, A.

doi:10.1103/physrevb.83.205303

Cited by 9 publications

(4 citation statements)

References 56 publications

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“…Similar to our conclusions, few earlier studies also found that some B atoms are located in other than L c 1 positions and that this depends on the heat treatment 13,16,17 . The exact location of these non-L c 1 boron atoms is not quite clear and it may further differ from sample to sample.…”

Section: Discussionsupporting

confidence: 93%

“…Indeed, several local-probe studies involving scanning tunneling microscopy (STM) or atomic-force microscopy (AFM) suggest that the B atoms may occupy also other positions than the L c 1 site [12][13][14][15] . A lot of attention was focused on how the structure varies depending on the conditions of preparation, especially on the heat treatment 1,[12][13][14]16,17 .…”

Section: Introductionmentioning

confidence: 99%

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Local geometry around B atoms in B/Si(1 1 1) from polarized x-ray absorption spectroscopy

Khan¹,

Vondráček²,

Blaha³

et al. 2019

J. Phys.: Condens. Matter

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The arrangement of B atoms in a doped Si(111)-( √ 3 × √ 3)R30 • :B system was studied using near-edge x-ray absorption fine structure (NEXAFS). Boron atoms were deposited via segregation from the bulk by flashing the sample repeatedly. The positions of B atoms are determined by comparing measured polarized (angle-dependent) NEXAFS spectra with spectra calculated for various structural models based on ab-initio total energy calculations. It is found that most of boron atoms are located in sub-surface L c 1 positions, beneath a Si atom. However, depending on the preparation method a significant portion of B atoms may be located elsewhere. A possible location of these non-L c 1 -atoms is at the surface, next to those Si atoms which form the ( √ 3× √ 3)R30 • reconstruction.

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Section: Discussionsupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Local geometry around B atoms in B/Si(1 1 1) from polarized x-ray absorption spectroscopy

Khan¹,

Vondráček²,

Blaha³

et al. 2019

J. Phys.: Condens. Matter

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“…Quite strong interaction in the B-Mo system was also recently demonstrated by dynamical LEED and DFT calculations by Hossain et al [ 21 ] for a boron layer annealed on Mo(112) surface. Furthermore, very similar behavior of boron films in terms of diffusion into the Si(111) substrate bulk accompanied by chemical bond formation is reported by Krugener et al [ 22 ], using ultraviolet photoelectron spectroscopy and reflection high-energy electron diffraction.…”

Section: Resultssupporting

confidence: 75%

Enhancing the Catalytic Activity of Mo(110) Surface via Its Alloying with Submonolayer to Multilayer Boron Films and Oxidation of the Alloy: A Case of (CO + O2) to CO2 Conversion

Men

Магкоев

Behjatmanesh–Ardakani

et al. 2023

Nanomaterials

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In-situ formation of boron thin films on the Mo(110) surface, as well as the formation of the molybdenum boride and its oxide and the trends of carbon monoxide catalytic oxidation on the substrates formed, have been studied in an ultra-high vacuum (UHV) by a set of surface-sensitive characterization techniques: Auger and X-ray photoelectron spectroscopy (AES, XPS), low-energy ion scattering (LEIS), reflection-absorption infrared spectroscopy (RAIRS), temperature-programmed desorption (TPD), electron energy loss spectroscopy (EELS) and work function measurements using the Anderson method. The boron deposited at Mo(110) via electron-beam deposition at a substrate temperature of 300 K grows as a 2D layer, at least in submonolayer coverage. Such a film is bound to the Mo(110) via polarized chemisorption bonds, dramatically changing the charge density at the substrate surface manifested by the Mo(110) surface plasmon damping. Upon annealing of the B-Mo(110) system, the boron diffuses into the Mo(110) bulk following a two-mode regime: (1) quite easy dissolution, starting at a temperature of about 450 K with an activation energy of 0.4 eV; and (2) formation of molybdenum boride at a temperature higher than 700 K with M-B interatomic bonding energy of 3.8 eV. The feature of the formed molybdenum boride is that there is quite notable carbon monoxide oxidation activity on its surface. A further dramatic increase of such an activity is achieved when the molybdenum boride is oxidized. The latter is attributed to more activated states of molecular orbitals of coadsorbed carbon monoxide and oxygen due to their enhanced interaction with both boron and oxygen species for MoxByOz ternary compound, compared to only boron for the Mox’By’ double alloy.

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“…It significantly decreased the Si cap thickness and oxide-charge-induced band bending impacted the accumulation of holes at the B-to-Si interface. On the Si surface, boron resides as an adatom decreasing the number of dangling bonds [13], [14], while boron depositions were found to cause band bending at the interface typical of highly doped p + regions [13], [15], [16]. It is of great interest to find conditions which would preserve such a high concentration of holes at the interface, the structure of which has been shown to have a great influence on the electrical properties [17], [18].…”

Section: Limits On Thinning Of Boron Layers With/withoutmentioning

confidence: 99%

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Knežević

Liu

Hardeveld

et al. 2019

IEEE Electron Device Lett.

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A little more than a monolayer-thick pureboron (PureB) layer was deposited on silicon at 250 • C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection as PureB diodes fabricated with a few nm-thick PureB layer deposited at 400 • C. Assuming high concentrations of acceptor states at the B-to-Si interface, induced by a fixed negative charge in the range from 5 × 10 13 cm −2 to 5 × 10 14 cm −2 , would be consistent with the experiments and device simulations that exhibit an efficient suppression of electron injection. Metallization of the B-layers was studied, showing that in many situations, thinning of the layer to monolayer thickness will lead to a significant increase in the electron injection.

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Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111)

Cited by 9 publications

References 56 publications

Local geometry around B atoms in B/Si(1 1 1) from polarized x-ray absorption spectroscopy

Local geometry around B atoms in B/Si(1 1 1) from polarized x-ray absorption spectroscopy

Enhancing the Catalytic Activity of Mo(110) Surface via Its Alloying with Submonolayer to Multilayer Boron Films and Oxidation of the Alloy: A Case of (CO + O2) to CO2 Conversion

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

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