Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition

Ahmed, Raju; Nazari, Mohammad; Hancock, Bobby Logan; Engdahl, Chris; Piner, Edwin L.; Holtz, M.

doi:10.1063/1.5027507

Cited by 14 publications

(15 citation statements)

References 22 publications

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“…For the diamond CVD process, nanodiamond seeds were dispersed using a photoresist-based spin coating technique as reported by Ahmed et al . A power of 6 kW was driven through an array of nine tungsten wires of 0.01″ diameter, which resulted in a 2200 °C wire filament temperature.…”

Section: Methodsmentioning

confidence: 99%

“…For the diamond CVD process, nanodiamond seeds were dispersed using a photoresist-based spin coating technique as reported by Ahmed et al 27 A power of 6 kW was driven through an array of nine tungsten wires of 0.01″ diameter, which resulted in a 2200 °C wire filament temperature. The rotating substrate was positioned 6 mm from the tungsten wire array to produce a substrate temperature of 720−750 °C and a uniform diamond growth rate.…”

Section: Methodsmentioning

confidence: 99%

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Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD

Siddique¹,

Ahmed²,

Anderson³

et al. 2019

ACS Appl. Electron. Mater.

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Integration of diamond and AlGaN/GaN highelectron mobility transistors (HEMTs) terminated with an in situ grown SiN x interface layer via metal organic chemical vapor deposition is investigated. The effect of diamond growth on the structure and interface properties of the HEMT is studied using high-resolution X-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and scanning transmission electron microscopy (STEM). No structural or physical damage is observed to the HEMT device layers as a result of the hot filament chemical vapor deposition diamond fabrication process. The TEM cross section confirms the smooth and abrupt interface of in situ SiN x /AlGaN/GaN before and after the diamond growth, with no detectable carbon diffusion into the GaN buffer layer. However, selective degradation of the in situ SiN x dielectric adhesion layer was observed at the SiN x /diamond interface. Using time domain thermoreflectance (TDTR), the effective isotropic thermal conductivity of the diamond was determined to be 176 −35 +40 W/m•K. The effective thermal boundary resistance of the diamond/ GaN interface (including the SiN x and additional layers) was 52.8 −3.2 +5.1 m 2 •K/GW.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD

Siddique¹,

Ahmed²,

Anderson³

et al. 2019

ACS Appl. Electron. Mater.

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“…Selective area diamond growth was conducted via patterning the wafer with standard optical lithography with the nanodiamond seeds fully dispersed in the photoresist. This contrasts with the seeding approach previously reported by Izak et al Details of the seeding and HFCVD process have been reported elsewhere . To achieve selectivity and clear remaining seeds from the exposed regions, each wafer was plasma etched in a reactive ion etching (RIE) chamber, step 6 in Figure b.…”

Section: Experimental Detailsmentioning

confidence: 98%

“…Challenges to the approaches described include damage to the nitride semiconductor during diamond CVD and the difficulty of patterning the diamond. ,,, Any damage to the HEMT layer stack is unsustainable, since the 2DEG channel forms in the GaN just beneath the thin (20–25 nm) AlGaN barrier layer. , This suggests that selective diamond deposition is preferable, i.e., a bottom up approach to the integration with GaN.…”

Section: Introductionmentioning

confidence: 99%

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Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers

Ahmed

Siddique

Anderson

et al. 2019

Crystal Growth & Design

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A new technique is reported for selective growth of polycrystalline diamond by hot filament chemical vapor deposition (HFCVD) on AlGaN/GaN-on-Si (111) wafers without degradation of the underlying layers. Selective diamond seeding is accomplished by dispersing nanodiamond seeds in photoresist and patterned lithographically prior to HFCVD growth. A thin layer of plasma enhanced CVD SiN x , deposited prior to seeding and diamond deposition, was found to be essential to protect the AlGaN/GaN wafer. A methane concentration of 3.0% was used to achieve an increased diamond growth rate and faster surface coverage. Excellent selectivity and minimal AlGaN surface damage were achieved with increased methane concentration. Damage mitigation was confirmed by comparison of atomic force microscopy, X-ray diffraction, and Raman spectroscopy, each conducted before and after diamond deposition, and by SEM images of the final structures.

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Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Yang,

Wang,

Chen

et al. 2024

Laser & Photonics Reviews

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In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microelectronic manufacturing. This issue is compounded by the additional thermal stress that accumulates during device operation. Therefore, it is essential to understand, characterize, and control this residual stress to ensure the reliability and efficiency of microelectronic devices. Raman spectroscopy emerges as an invaluable tool for nondestructive, fast, noncontact, and precise testing of micro‐scale mechanics, significantly aiding in stress and strain analysis within microelectronic manufacturing. This article aims to provide a thorough overview of the theory and application beyond a mere compilation of recent advances. Theoretically, it critically evaluates existing models that describe the Raman‐stress relation. Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro‐scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman‐stress detection technology.

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Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition

Cited by 14 publications

References 22 publications

Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD

Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD

Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

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