Ultraviolet light emitting diode based on p-NiO/n-ZnO nanowire heterojunction

Jung, Byung Oh; Kwon, Yong Hun; Seo, Dong Ju; Lee, Dong-Seon; Cho, Hyung Koun

doi:10.1016/j.jcrysgro.2012.10.037

Cited by 59 publications

(27 citation statements)

References 34 publications

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“…Such a high value of n suggests that the transport mechanism is not dominated by the thermionic emission, but consists of other mechanisms such as defect-assisted tunnelling with conventional electron-hole recombination [28]. According to the electron affinity (v) and energy band gap (E g ) values of ZnO (4.35, 3.37 eV), NiO (1.46, 3.70 eV) and GaAs (4.07, 1.42 eV), the energy band diagram of heterojunctions can be drown using the Anderson model [19][20][21][29][30][31]. The energy band diagram is shown in Fig.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Effect of NiO intermediate layer on the optical and electrical properties of n-ZnO nanorods/p-GaAs heterojunction

et al. 2015

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ZnO nanorods were grown hydrothermally on bare and NiO-coated p-GaAs substrate to fabricate p-n heterojunctions. The NiO intermediate layer was deposited using thermal evaporation technique. The X-ray diffraction patterns revealed that ZnO nanorods grown on the bare p-GaAs do not have any preferential orientation along the c-axis, but those on the NiO-coated p-GaAs have preferential orientation along the c-axis, i.e. along the (002) direction. The scanning electron microscope images show that the NiO intermediate layer improved the uniformity and the alignment of the ZnO nanorods. Photoluminescence spectra demonstrated that increasing the thickness of NiO intermediate layer leads to improve the optical quality of the ZnO nanorods. Current-voltage characteristics showed that the presence of the NiO intermediate layer leads to increase the threshold voltage and decrease the leakage current of the n-ZnO nanorods/p-GaAs heterojunction. The energy band diagram of heterojunctions drown using Anderson model revealed that the NiO intermediate layer acts as an electron-blocking layer in the ZnO side and at the same time increases the hole injection from the GaAs to the ZnO side. Therefore, most of electron-hole pair recombination could occur at the ZnO site.

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Section: Electrical Propertiesmentioning

confidence: 99%

Effect of NiO intermediate layer on the optical and electrical properties of n-ZnO nanorods/p-GaAs heterojunction

et al. 2015

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“…Within the model, we assume that the incoming flux a impinging the droplet is independent of time, but equal to the product of the deposition rate J and the NW crosssection area πR 2 , where R is the NW radius. For simplicity, the diffusion flux from the NW sidewalls is not considered here since it is not critical to the formulation of current model (although the corresponding generalization is straightforward [14]).…”

Section: Modelmentioning

confidence: 99%

“…Semiconductor nanowires (NWs) are one-dimensional nanocrystals with a high crystal quality and well-controlled properties which show a great potential for use in nanoelectronics [1], nano-optics [2] and nanosensing [3,4]. These NWs are usually grown via the vapor-liquid-solid (VLS) mechanism with a metal catalyst, where the nucleation of *Manuscript Click here to view linked References 2 nanowire monolayers (MLs) from a supersaturated alloy in the liquid droplet plays a crucial role [5][6][7][8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Modeling the nucleation statistics in vapor–liquid–solid nanowires

Sibirev

Назаренко

Zeze

et al. 2014

Journal of Crystal Growth

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The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Abstract: The statistics of nucleation events in nanowires growing via the vapor-liquid-solid mechanism in the mononuclear regime is studied theoretically. A semi-analytical model is developed which is capable of describing the distributions of time intervals between the successive nucleation events and some other useful characteristics of nucleation statistics. Very importantly, our model accounts for desorption from the droplet, which was not included in the previous studies. It is shown that the relative dispersion of nucleation distributions increases with the nanowire radius and at a higher desorption rate from the droplet, leading to the corresponding broadening of the length distribution. Using the model is also shown to fit well experimental data available on nucleation statistics in the Au-catalyzed Si and III-V nanowires.We proposed theoretical model of nucleation during the VLS growth of nanowires in the mononuclear regimeThe model accounts for desorption from the droplet and allows one to describe the nucleation statistics and the nanowire length distribution.It was shown that the relative dispersion of nanowire length increases with the NW radius and at a higher desorption from the droplet. *Highlights (for review) AbstractThe statistics of nucleation events in nanowires growing via the vapor-liquid-solid mechanism in the mononuclear regime is studied theoretically. A semi-analytical model is developed which is capable of describing the distributions of time intervals between the successive nucleation events and some other useful characteristics of nucleation statistics. Very importantly, our model accounts for desorption from the droplet, which was not included in the previous studies. It is shown that the relative dispersion of nucleation distributions increases with the nanowire radius and at a higher desorption rate from the droplet, leading to the corresponding broadening of the length distribution. Using the model is also shown to fit well experimental data available on nucleation statistics in the Au-catalyzed Si and III-V nanowires. AbstractThe statistics of nucleation events in nanowires growing via the vapor-liquid-solid mechanism in the mononuclear regime is studied theoretically. A semi-analytical model is developed which is capable of describing the distributions of time intervals between the successive nucleation events and some other useful characteristics of nucleation statistics. Very importantly, our model accounts for desorption from the droplet, which w...

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“…On the other hand, nickel oxide (NiO) has been under investigation for different technological applications due to its wide direct band gap (3.6 -4.0 eV) and it is intrinsically p type semiconductor. These properties make NiO a suitable candidate for the fabrication of pNiO/n-ZnO heterojunction based UV photo-detectors [15][16][17][18]. Alternative inexpensive fabrication techniques are usually needed to realize large scale, mass production and low cost UV photo-detectors with high performance.…”

Section: Introductionmentioning

confidence: 99%