Ultraviolet lasing action in aligned ZnO nanowall

Harada, K.; Nakao, Shihomi; Takahashi, Masahiro; Higashihata, Mitsuhiro; Ikenoue, Hiroshi; Nakamura, Daisuke; Nakata, Yoshiki; Okada, Tatsuo

doi:10.1007/s00340-015-6103-3

Cited by 13 publications

(3 citation statements)

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“…Zinc oxide (ZnO) is one such material that appears to be of considerable interest for practical application in photocatalysis, UV lasers, field-emission displays, sensors, solar cells, nano-generators, optical waveguides, etc. [2][3][4][5][6][7]. This could be attributed to their unique properties such as wide bandgap (3.3 eV), large exciton binding energy, high electron mobility, non-toxicity, chemical stability, high catalytic efficiency and low material cost [8].…”

Section: Introductionmentioning

confidence: 99%

Facile synthesis of ZnAgO nanoflakes and their improved photocatalytic activities under sun light

Chidambaram

Jones

Gomathi

et al. 2016

J Mater Sci: Mater Electron

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Silver (Ag) doped zinc oxide (ZnO) nanoflakes were processed through a facile wet-chemical route. Their phase purity and wurtzite crystalline characteristics were studied using the results of X-ray diffraction measurements. The flake-like morphological nature of the processed materials was examined through scanning electron microscopy. The optical absorbance of undoped ZnO was noted to improve significantly along the visible region on Ag doping. The absence of surface plasmon resonance in Zn 1-x Ag x O nanostructures characterized the effective substitution of Ag dopant ions in the host matrix. The photocatalytic activity of undoped ZnO and Zn 1-x Ag x O was evaluated via performing degradation reactions using methylene blue (MB) under visible light. The degradation kinetics was also noted to improve significantly in the doped materials while compared with that of the undoped ZnO.

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Section: Introductionmentioning

confidence: 99%

Facile synthesis of ZnAgO nanoflakes and their improved photocatalytic activities under sun light

Chidambaram

Jones

Gomathi

et al. 2016

J Mater Sci: Mater Electron

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“…Therefore, ZnO is a promising semiconductor material in the field of ultraviolet (UV) light-emitting devices such as UV lightemitting diodes and UV laser diodes. In addition, ZnO nano= microstructures have attracted considerable attention because of their high crystalline quality and unique structures such as nanowires, 1,2) nanosheets, 3,4) nanorods, [5][6][7] nanowalls, [8][9][10][11] and microspheres. [12][13][14][15] For the development ZnO-based devices, p-type ZnO and n-type ZnO are necessary.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of Sb-doped ZnO microspheres by pulsed laser ablation

Nagasaki

Shimogaki

Tanaka

et al. 2016

Jpn. J. Appl. Phys.

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We succeeded in synthesizing antimony (Sb)-doped zinc oxide (ZnO) microspheres by ablating a sintered ZnO target containing Sb in air. The structural properties of the microspheres were investigated by Raman scattering studies. The Zn–Sb related local vibrational mode (LVM) was detected around 238 cm−1. Room-temperature photoluminescence (PL) properties of the microspheres were investigated under cw and pulsed laser excitations, and ultraviolet (UV) emission and whispering-gallery-mode (WGM) lasing were observed from the microspheres. Furthermore, a p–n heterojunction was formed between a single Sb-doped ZnO microsphere and an n-Al-doped ZnO thin film, and a good rectifying property with a turn-on voltage of approximately 1.8 V was observed in the current–voltage (I–V) characteristics across the junction.

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“…Hence, extensive attention was paid to the wide-band-gap materials. Compared with abundant literature on RLs in ZnO films, microwires, powders, nanowires, rods, and nanowalls, − the reports on an ultraviolet RL from GaN are very rare.…”

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confidence: 99%

Ultraviolet Random Laser Based on a Single GaN Microwire

Ren

Zhu

et al. 2018

ACS Photonics

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Random lasing (RL) from self-constructed localized cavities based on micropits scatters in a single GaN microwire (MW) was investigated. The spectra and spatial resolution of RL exhibits that the lasing modes originated from different regions in the MW. Temperature-dependent lasing measurement of GaN RL shows an excellent characteristic temperature of about 52 K. In addition, the dependence of spatial localized cavities’ dimension on the pumping intensity profile and temperature was studied by fast Fourier transform spectroscopy. For GaN RL, the optical feedback was supported by localized paths through the scattering effect of micropits in the MW. The scattering feedback mechanism for RL can avoid the enormous difficulty in fabricating artificial cavity structures for GaN. Hence, the results in this paper represent a low-cost technique to realize GaN-based ultraviolet laser diodes without the fabrication difficulty of cavity facets.

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Ultraviolet lasing action in aligned ZnO nanowall

Cited by 13 publications

References 20 publications

Facile synthesis of ZnAgO nanoflakes and their improved photocatalytic activities under sun light

Facile synthesis of ZnAgO nanoflakes and their improved photocatalytic activities under sun light

Synthesis and characterization of Sb-doped ZnO microspheres by pulsed laser ablation

Ultraviolet Random Laser Based on a Single GaN Microwire

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