Synthesis and characterization of Sb-doped ZnO microspheres by pulsed laser ablation

Abstract

We succeeded in synthesizing antimony (Sb)-doped zinc oxide (ZnO) microspheres by ablating a sintered ZnO target containing Sb in air. The structural properties of the microspheres were investigated by Raman scattering studies. The Zn–Sb related local vibrational mode (LVM) was detected around 238 cm−1. Room-temperature photoluminescence (PL) properties of the microspheres were investigated under cw and pulsed laser excitations, and ultraviolet (UV) emission and whispering-gallery-mode (WGM) lasing were observed from the microspheres. Furthermore, a p–n heterojunction was formed between a single Sb-doped ZnO microsphere and an n-Al-doped ZnO thin film, and a good rectifying property with a turn-on voltage of approximately 1.8 V was observed in the current–voltage (I–V) characteristics across the junction.

Morphology and electrical characteristics of p-type ZnO microwires with zigzag rough surfaces induced by Sb doping

“…[12][13][14] Sb atom would substitute for a Zn atom and simultaneously produce two corresponding Zn vacancies, therefore Sb-doped ZnO shows strong p-type conduction based on rst-principles calculation, 15 hence large-mismatched Sb atoms are efficient p-type dopants for ZnO nanowires. [16][17][18] Recently, various synthesis methods have been developed to synthesize micro/nanomaterials with controlling of their size and shape, including both vapor phase and solution phase synthesis, to enhance the multi-functionality of ZnO in different application elds. 19,20 ZnO microwires with a novel square crosssection have promising prospect in the eld of cavity quantum electrodynamics and the development of miniature optoelectronic devices.…”

“… 12–14 Sb atom would substitute for a Zn atom and simultaneously produce two corresponding Zn vacancies, therefore Sb-doped ZnO shows strong p-type conduction based on first-principles calculation, 15 hence large-mismatched Sb atoms are efficient p-type dopants for ZnO nanowires. 16–18 …”