2019
DOI: 10.1021/acs.nanolett.9b03243
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Ultraviolet Interband Plasmonics With Si Nanostructures

Abstract: Although Si acts as an electrical semiconductor, it has properties of an optical dielectric.Here, we revisit the behavior of Si as a plasmonic metal. This behavior was previously shown to arise from strong interband transitions that lead to negative permittivity of Si across the ultra-violet spectral range. However, so far, few have studied the plasmonic characteristics of Si, particularly in its nanostructures. In this paper, we report localized plasmon resonances in Si nanostructures and the observation of p… Show more

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Cited by 46 publications
(39 citation statements)
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“…From the material side, silicon is extremely stable and compatible to the modern CMOS technologies, naturally matching the requirements on mass-manufacturability and long-time durability [18][19][20][32][33][34] . The sophisticated design on nanostructures gives the possibility of concealing its shortage and improving the color impression 20,[35][36][37] . In addition, the large refractive index of Si enables simple structures for highperformance structural color, essential for the cost-effective nanofabrication 20,38,39 .…”
Section: Resultsmentioning
confidence: 99%
“…From the material side, silicon is extremely stable and compatible to the modern CMOS technologies, naturally matching the requirements on mass-manufacturability and long-time durability [18][19][20][32][33][34] . The sophisticated design on nanostructures gives the possibility of concealing its shortage and improving the color impression 20,[35][36][37] . In addition, the large refractive index of Si enables simple structures for highperformance structural color, essential for the cost-effective nanofabrication 20,38,39 .…”
Section: Resultsmentioning
confidence: 99%
“…Nonlocal effects exist also in this situation, which have been explored in hydrodynamic models [69,70,337]. In passing, we note that even undoped semiconductors can host nonlocal phenomena associated with excitons [338], and also interband transitions can resemble plasmonic behavior [74].…”
Section: Quantum Plasmons In Low-dimensional Systemsmentioning
confidence: 98%
“…In passing, we note that there is now also growing attention to plasmon-like behavior associated with negative dielectric function values. This can be due to electronic interband transitions, including the possible interband response in graphene [30,67,73] and in silicon [74], while the negative response may also be caused by phonon polaritons, such as in polar dielectrics [75].…”
Section: Plasmonicsmentioning
confidence: 99%
“…The dielectrics of the c-Si and ITO were from Palik, [37] and the dielectrics of the a-Si and the perovskite were from the literature. [29,38]…”
Section: Methodsmentioning
confidence: 99%