2021
DOI: 10.30970/jps.25.1701
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Ultraviolet electroluminescence of LED devices based on n-ZnO nanorods grown by various methods and p-GaN films

Abstract: Light emitting diodes (LEDs) structures based on p-GaN lm/n-ZnO nanorods quasiarray heterojunction were fabricated. ZnO nanostructures were grown on the p-type GaN templates using two dierent methods. The turn-on voltages of ZnO/GaN heterojunctions based on ZnO nanorods grown using the gas-transport reaction and hydrothermal methods were equal to 3.2 V and 6.5 V, respectively. The diode-ideality factors were estimated to be of around 45 and 36 for the samples with ZnO nanorods grown using the method of the gas… Show more

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Cited by 3 publications
(7 citation statements)
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“…ZnO hexagonal microrods (Fig. 1) were grown by the method of gas-transport reactions on a p-GaN epitaxial film [7]. For seed-supported growth of ZnO nanorods, nanocrystalline ZnO seed particles were prepared in a solution of 0.005 mol/l zinc acetate [Zn(CH 3 CO 2 ) 2 ] dissolved in ethanol at 90 • C for 15 min.…”
Section: Experimental Partmentioning
confidence: 99%
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“…ZnO hexagonal microrods (Fig. 1) were grown by the method of gas-transport reactions on a p-GaN epitaxial film [7]. For seed-supported growth of ZnO nanorods, nanocrystalline ZnO seed particles were prepared in a solution of 0.005 mol/l zinc acetate [Zn(CH 3 CO 2 ) 2 ] dissolved in ethanol at 90 • C for 15 min.…”
Section: Experimental Partmentioning
confidence: 99%
“…The contacts on the p-GaN template were deposited using thermal evaporation of Ni (30 nm) followed by Au (35 nm) [6,7]. A quartz-crystal microbalance was used as a thin film deposition monitor.…”
Section: Experimental Partmentioning
confidence: 99%
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