Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique

Abstract

Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

From Precursor Chemistry to Gas Sensors: Plasma‐Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

“…[ 63–65 ] From this absorption, the band gap was estimated to be E g = 3.3 eV by calculating the term ( αhν ) 2 for a direct allowed band gap in a Tauc‐plot [ 66 ] (Figure 7, inset), which is in accordance to literature values for ZnO thin films. [ 2,64,65 ] Thus, the optical properties are indeed suitable for the application of these ZnO layers as TCO.…”

“…[ 1 ] With a direct allowed band gap of 3.37 eV it is an ultraviolet (UV)‐emitting photoluminescent material that can be used in UV‐light emitting diodes (LEDs). [ 2 ] Furthermore, it is electrically conductive and thus, can be used as channel material in thin film transistors (TFTs) [ 3–5 ] or as sensing layer in chemiresistors [ 6 ] for the detection of gaseous ethanol, [ 7,8 ] CO, [ 9,10 ] NO 2 , [ 11–13 ] H 2 , [ 14 ] H 2 S, [ 15 ] O 2 , [ 11 ] O 3 [ 16 ] or NH 3 . [ 17 ] This property, in combination with a high transparency in the visible light spectrum, renders ZnO to be a so called transparent conductive oxide (TCO) [ 18 ] and enables its usage as a buffer layer in solar cells.…”

One-Step Thermal-Treatment Route to Fabricate Well-Dispersed ZnO Nanocrystals on Nitrogen-Doped Graphene for Enhanced Electrochemiluminescence and Ultrasensitive Detection of Pentachlorophenol

“…Zinc oxide (ZnO) has gained increasing research attention in recent years, with many potential proof-of-concept device demonstrations such as field effect transistors, transparent conductors, ultraviolet light-emitting diodes, and especially chemical sensors. − For chemical sensors, previous studies of traditional metal oxides indicated that the sensing performance has been correlated with structures. , ZnO may have the richest variety of different structures, which is a benefit for sensor design and fabrication. To date, ZnO nanostructures (such as nanorods, nanotubes, nanocrystals, and combs) have been employed in immunosensor, enzyme biosensor, and other type sensors. − Especially, ZnO nanocrystals (also called quantum dots) have shown excellent sensing performances owing to their unique advantages such as high catalytic efficiency, good chemical stability, strong adsorption ability, and unique optical and electronic properties. , For instance, Bai et al.…”

“…Zinc oxide (ZnO) has gained increasing research attention in recent years, with many potential proof-of-concept device demonstrations such as field effect transistors, 1 transparent conductors, 2 ultraviolet light-emitting diodes, 3 and especially chemical sensors. 4−9 For chemical sensors, previous studies of traditional metal oxides indicated that the sensing performance has been correlated with structures.…”

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

“…PbSe quantum dot solar cells were not affected by the nitrogen doping, revealing that the performance improvement is dependent on whether recombination is dominant in the absorber layer or at the interface. 65 The lower carrier concentration improved rectification in photodiodes, 107 increased ZnO UV emission in LEDs, 111 improved TFT switching over ZnO 87 and dependence of performance on atmosphere is removed. 173…”