Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient

Investigation of structural, optical and luminescent properties of sprayed N-doped zinc oxide thin films

“…The broad blue emission peak at 447 nm can be referred to the singly ionized oxygen vacancy in the ZnO and the emission results from the irradiative recombination of a photogenerated hole with an electron occupying the oxygen vacancy [28]. The most commonly investigated deep level emission in ZnO known as green emission appears at 559 nm.…”

Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

“…Conventional thermal annealing will inevitably result in decomposition of nitrogen and oxygen from the ZnO:N sample, which will be harmful for the properties of ZnO:N sample [19][20][21]. To solve this dilemma and exploit the advantage of nitrogen dopant, a potent technique conducted in our previous work can effectively restrain decomposition of nitrogen and oxygen in annealing process as well as improve the crystalline quality of ZnO:N sample [18]. The above results indicated that such annealing condition can effectively improve the electrical properties of ZnO:N film.…”

“…In this work, ZnObased p-ZnO:N/n-GaN:Si/sapphire structure heterojunction LED is fabricated by full MOCVD technique. p-type ZnO:N film has been obtained from nitrogen-doped ZnO using NH 3 gas as the doping source with subsequent annealing in N 2 O plasma ambient in our previous work [18]. The device exhibits desirable rectifying behavior.…”

Electroluminescence from a n‐ZnO/p‐GaN hybrid LED

“…Unfortunately the realization of long term stable and reproducible p-type material is still a challenge due to the deep level of the valence band and point defects acting as donors [1,2]. Although there are many publications about successfully p-type doping using impurities like N, P, As and Sb [3][4][5][6][7] and even about electroluminescence (EL) [8][9][10], at present no ZnO LED is commercially available and many research groups started to investigate hybrid LEDs using alternative p-type materials. Since ZnO and GaN have very similar physical properties and a lattice mismatch as small as 1.9 %, p-GaN can substitute p-ZnO; furthermore the GaN technology is well developed because it is the material of choice for LEDs in the green and blue spectral range.…”