Ultraviolet detectors for harsh environments

Miller, Ruth A.; So, Hongyun; Heuser, Thomas A.; Yalamarthy, Ananth Saran; Satterthwaite, Peter F.; Senesky, Debbie G.

doi:10.1016/b978-0-08-102795-0.00008-6

Cited by 2 publications

(2 citation statements)

References 81 publications

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“…Photodetectors that convert light to electrical signals play vital roles in applications in communications, computation, imaging, sensing and so on. Semiconductors with wide bandgaps, such as silicon carbide (SiC), aluminum gallium nitride (AlGaN) and gallium oxide (Ga 2 O 3 ) have attracted intensive attention for the development of next-generation photodetectors by virtue of their advantages such as operation in harsh environments and at high temperatures [1][2][3][4][5][6]. Compared with other wide bandgap semiconductors, SiC, especially its crystallite 4H-SiC, has considerable advantages of mass and mature production, driven by rapid advances in the field of power electronics [7].…”

Section: Introductionmentioning

confidence: 99%

A highly sensitive filterless narrowband 4H-SiC photodetector employing a charge narrowing strategy

Geng

et al. 2023

J. Phys. D: Appl. Phys.

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Silicon carbide (SiC) semiconductor with wide bandgap has aroused intensive attentions because they can endure harsh environments and high temperatures. SiC photodetectors based on conventional principles usually detect UV light without the ability of wavelength discrimination. Here, resorting to the charge narrowing collection principle, we realize a highly sensitive filterless narrowband 4H-SiC photodetector. The 4H-SiC layer is sufficiently thick to facilitate charge collection narrowing of the device’s external quantum efficiency spectrum, inducing a full width at half-maxima of 14.5 nm at the peak wavelength of 355 nm. Thanks to the Fermi level pinning effect, the proposed photodetector can fully eliminate the injection current; thus it works as a photovoltaic type device with a remarkably low dark current. Consequently, the devices renders a photo-to-dark current ratio as high as 4×107, superior to the performances of most of reported 4H-SiC UV photodetectors. In addition, the device can detect light signals with a power density as low as 96.8 pW/cm2, more than two orders of magnitude superior to that of the commercial product based on the photodiode principle. Moreover, it can endure high temperature of 350 °C, demonstrating bright prospects in harsh industry conditions.

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Section: Introductionmentioning

confidence: 99%

A highly sensitive filterless narrowband 4H-SiC photodetector employing a charge narrowing strategy

Geng

et al. 2023

J. Phys. D: Appl. Phys.

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“…However, they noted a slightly increased response time due to the decreasing hole/electron velocity with rising temperature. [ 27 ] Furthermore, Jain et al reported a reduction in responsivity at higher temperatures in honeycomb‐like GaN nanostructures. [ 28 ] Li, et al reported a decrease in photocurrent and responsivity with rising temperature in the range from room temperature to 200 °C due to band gap shrinkage and lattice scattering.…”

Section: Introductionmentioning

confidence: 99%

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Halge,

Narwade,

Khanzode

et al. 2023

Adv Eng Mater

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A visible light photodetector is developed using cobalt (Co)‐doped cadmium sulfide (CdS) thin films that exhibits outstanding characteristics with a photocurrent of 284 μA, responsivity of 13.2 A W−1, an extraordinary external quantum efficiency (EQE) of 4550%, exceptional sensitivity (2.84 × 106%), and a rapid response time of 0.6 ms. These remarkable properties are most pronounced in 1 wt% Co‐doped CdS device and decrease with higher Co doping concentrations. This enhanced performance is attributed to the introduction of a defect energy band (DEB) near the CdS valence band, supported by UV‐Vis absorption spectra with a distinct feature at 744 nm. This DEB remains fully populated at room temperature and plays a vital role in responding to temperature variations. Our investigation reveals that 1 wt% Co‐doped CdS device exhibits significant (90%) thermal tolerance compared to pure CdS (10%) and higher Co doping concentrations (20%) in the temperature range of 27–110 °C. This improved thermal stability is attributed to the optimal Co doping concentration, striking a balance between thermal and photo‐excitation processes, thereby stabilizing the photocurrent. This research offers valuable insights into Co‐doped CdS thin films, promising robust and reliable photodetection devices, particularly suitable for applications with fluctuating temperatures.

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Ultraviolet detectors for harsh environments

Cited by 2 publications

References 81 publications

A highly sensitive filterless narrowband 4H-SiC photodetector employing a charge narrowing strategy

A highly sensitive filterless narrowband 4H-SiC photodetector employing a charge narrowing strategy

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

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