Organic-inorganic hybrid perovskites have attracted considerable attention for developing novel optoelectronic devices owing to their excellent photo responses. However, conventional nanolithography of hybrid perovskites remains a challenge because they undergo severe damage in standard lithographic solvents, which prohibits device miniaturization and integration. In this study, a novel transparent stencil nanolithography (tSL) technique is developed based on focused ion beam (FIB)assisted polyethylene terephtha late (PET) direct patterning. The proposed tSL enables ultrahigh lithography resolution down to 100 nm and accurate stencil mask alignment. Moreover, the stencil mask can be reused more than ten times, which is costeffective for device fabrication. By applying this lithographic technique to hybrid perovskites, a highperformance 2D hybrid perovskite heterostructure photodetector is fabricated. The responsivity and detectivity of the proposed heterostructure photodetector can reach up to 28.3 A W −1 and 1.5 × 10 13 Jones, respectively. This tSL nanolithography technique based on FIBassisted PET direct patterning can effectively support the miniaturization and integration of hybridperovskitebased electronic devices.
Silicon carbide (SiC) semiconductor with wide bandgap has aroused intensive attentions because they can endure harsh environments and high temperatures. SiC photodetectors based on conventional principles usually detect UV light without the ability of wavelength discrimination. Here, resorting to the charge narrowing collection principle, we realize a highly sensitive filterless narrowband 4H-SiC photodetector. The 4H-SiC layer is sufficiently thick to facilitate charge collection narrowing of the device’s external quantum efficiency spectrum, inducing a full width at half-maxima of 14.5 nm at the peak wavelength of 355 nm. Thanks to the Fermi level pinning effect, the proposed photodetector can fully eliminate the injection current; thus it works as a photovoltaic type device with a remarkably low dark current. Consequently, the devices renders a photo-to-dark current ratio as high as 4×107, superior to the performances of most of reported 4H-SiC UV photodetectors. In addition, the device can detect light signals with a power density as low as 96.8 pW/cm2, more than two orders of magnitude superior to that of the commercial product based on the photodiode principle. Moreover, it can endure high temperature of 350 °C, demonstrating bright prospects in harsh industry conditions.
Perovskites are widely used in various kinds of optoelectronic devices, including solar cells, photodetectors, light-emitting diodes, etc., due to their excellent properties such as long carrier diffusion length, high absorption coefficient, low trap state density and so on. Functional materials such as layered two-dimensional materials (graphene, transition metal dichalcogenides, etc.),low-dimensional semiconductor nanostructures (nanoparticles, quantum dots, nanowires, nanotubes,nanorods,nanopieces,etc.), metallic nanostructures(Au,Ag, etc.) and insulating materials (insulating polymer, organic amine, inorganic insulating film, etc.) have attracted more and more attention due to their special chemical, electrical and physical properties.In order to broaden the application of perovskites in photovoltaic devices, perovskites can be combined with various functional materials to form heterostructures so as to combine the advantages of the two types of materials.The heterostructures of perovskites/functional materials can be used as the interface modification layer in halide perovskites photovoltaic devices, to improve the crystallinity of perovskite, effectively reduce the surface defects and suppress the carrier recombination loss at the interface. The heterostructures of perovskites/functional materials can be used as the charge transporting layer in halide perovskites photovoltaic devices, can match well with the perovskite energy levels, which is beneficial to the efficient extraction of holes and electrons. The heterostructures of perovskites/functional materials also can be used as encapsulation layer in halide perovskites photovoltaic devices, to reduce the contact between water and perovskite, it can effectively prevent the degradation of perovskite, to improve the device stability.In addition, the semiconductor with narrow bandgap or array structure can be used to broaden the spectral response and to improve the light absorption of the perovskite photovoltaic devices.In a word, the heterostructures of perovskites/functional materials are applied to devices is an effective way to obtain high performance and low cost photovoltaic devices.In this review, recent works on the applications of the heterostructures in halide perovskite photovoltaic devices are comprehensively presented and discussed. The progress and advantages of the heterostructures as the interface modification layer, charge transporting layers and encapsulation layer in halide perovskite photovoltaic devices are systemically reviewed. Finally, we summarize the whole paper and give a prospect for the development of heterostructures based perovskite photovoltaic devices in the future.
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