2011
DOI: 10.1002/adfm.201002062
|View full text |Cite
|
Sign up to set email alerts
|

Ultrathin TiN Membranes as a Technology Platform for CMOS‐Integrated MEMS and BioMEMS Devices

Abstract: A standard complementary metal‐oxide‐semiconductor (CMOS) process is successfully modified to encompass the preparation of suspended TiN membranes of only 50 nm thickness from one of the metal layer stacks of the back‐end flow. The layers’ elastomechanical constants are determined with high precision by laser Doppler vibrometry. Residual stress gradients are compensated and a state of moderate tensile strain is introduced into the membranes. Test systems of TiN beams and bridges operating in a capacitive coupl… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
25
0
1

Year Published

2013
2013
2024
2024

Publication Types

Select...
8

Relationship

2
6

Authors

Journals

citations
Cited by 38 publications
(26 citation statements)
references
References 19 publications
0
25
0
1
Order By: Relevance
“…28,29 Instead, also the compensation of residual stress gradients has been succeeded allowing for the fabrication of microelectromechanical systems with TiN actuators. 30 Due to the large Young's modulus of TiN of about 500 GPa, 31 the actuator beam has to be prepared with a thickness of only 50 nm, when sufficiently large deflections shall be achieved by a voltage of 3.5 V obtainable in 0.25 lm CMOS circuits. 30 Figure 2 displays a SEM picture of the BioMEMS prepared with SiO 2 side walls, while the upper surface is covered by a 400 nm passivation of siliconoxynitride.…”
Section: Biomems For Ghz Frequenciesmentioning
confidence: 99%
“…28,29 Instead, also the compensation of residual stress gradients has been succeeded allowing for the fabrication of microelectromechanical systems with TiN actuators. 30 Due to the large Young's modulus of TiN of about 500 GPa, 31 the actuator beam has to be prepared with a thickness of only 50 nm, when sufficiently large deflections shall be achieved by a voltage of 3.5 V obtainable in 0.25 lm CMOS circuits. 30 Figure 2 displays a SEM picture of the BioMEMS prepared with SiO 2 side walls, while the upper surface is covered by a 400 nm passivation of siliconoxynitride.…”
Section: Biomems For Ghz Frequenciesmentioning
confidence: 99%
“…15-18 K for NbN and MoN) and they provide conductive diffusion barrier layers for electronics devices. The optical properties lead to coloured coatings for costume jewellery, and they have applications in catalysis [4][5][6][7][8][9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…In these situations titanium nitride may be the material of choice, as it turned out remarkably corrosion‐resistant. Its corrosion‐resistance in biotechnological applications is expressed by negligible redox rates in cyclic voltammograms when TiN was used as working electrodes. Accordingly, TiN electrodes are applied in biomedical applications such as the artificial retina implant or IHP's glucose sensor chip . TiN should always be considered as the top‐most electrode material, when the electrodes are intended to interact with bio‐milieus.…”
Section: Preparation Technologies For Microelectronic Chipsmentioning
confidence: 99%