Ultrathin Three-Monolayer Tunneling Memory Selectors

Wang, Ching-Hua; Chen, Victoria; McClellan, Connor J.; Tang, Alvin; Vaziri, Sam; Li, Linsen; Chen, Michelle E.; Pop, Eric; Wong, Hang

doi:10.1021/acsnano.1c00002

Cited by 10 publications

(11 citation statements)

References 41 publications

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“…We define the V ON of the devices as the voltage at which the current reaches 10% of the maximum current. [24] In contrast, Au/WSe 2 /Au device exhibits a smaller J of about 200 A cm −2 with a larger NL of around 40 at V TE = 2 V and V ON of 1.3 V. This phenomenon is consistent with previous research. [25] The observed asymmetrical I-V curve for the WSe 2 device results from the asymmetrical metal−WSe 2 contact areas at the top and the bottom contacts, which become moderate with decreasing thickness.…”

Section: The Selector With Metal/semiconductor Junctionsupporting

confidence: 92%

Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction

Chen,

Wan,

Zhou

et al. 2023

Adv Funct Materials

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Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small footprint and low‐temperature processing for ultrahigh‐density data storage. Here, an ultrathin two‐terminal n‐p‐n selector with 2D transition metal dichalcogenides (TMDs) is designed by a low‐temperature transfer method. The van der Waals contact between transferred Au electrodes and TMDs reduces the Fermi level pinning and retains the intrinsic transport behavior of TMDs. The selector with a single type of TMD exhibits a trade‐off between current density and nonlinearity depending on the barrier height. By tuning the Schottky barrier height and controlling the thickness of p‐type WSe2 in MoS2/WSe2/MoS2 n‐p‐n selector for a punch‐through transport, the selector shows high nonlinearity (≈ 230) and high current density (2 × 103 A cm−2) simultaneously. The n‐p‐n selectors are further integrated with a bipolar hexagonal boron nitride memory and calculate the maximum crossbar size of the 2D material‐based one‐selector one‐resistor according to a 10% read margin, which offers the possible realization of future 3D monolithic integration.

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Section: The Selector With Metal/semiconductor Junctionsupporting

confidence: 92%

Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction

Chen,

Wan,

Zhou

et al. 2023

Adv Funct Materials

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“…Although the change of switch layer structure has changed some performances of the selector, each selector still has a large interface potential barrier and a wide band gap of switch layer. Compared with the previously developed selector [45][46][47][48], the three selector models we have established show lower I off of about 1 × 10 −14 A. At the same time, all the selector based on different g-GaN structure have large NL.…”

Section: Resultsmentioning

confidence: 70%

Ultra-low turn-off current 2D material heterojunction selectors: first-principle calculations

Dai¹,

Hu²,

Li³

et al. 2022

Semicond. Sci. Technol.

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Selector is important for emerging non-volatile memory arrays to settle the sneak path problem and inhibit the array leakage current. The turn-off current of the selector determines the ability of selector to inhibit the leakage current. Here, selector models with the structure of graphene/g-GaN/graphene show ultra-low turn-off current. First, combining the plane electrostatic potential and the current-voltage characteristic of switch layers of heterojunctions, it can be concluded that the resistance switching mechanism is based on Schottky barrier at the interface. Moreover, three selector models with different switch layers (Model A, B, C) are explored to study the influence of the switch layer structure on the device. The plane average electrostatic potential of selectors shows that the different structures of the switch layer result in the difference of the threshold voltage (Vth), owing to the different interface barrier. Finally, the electronic transmission shows each selector have an ultra-low turn-off current (Ioff) and high nonlinearity (NL), which could better suppress the leakage current in array. This work supplies a potential implementation scheme for the selector with ultra-low turn-off current.

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“…2D heterostructures can supply possibilities for the design of new electronic memories. ,,− ,,,,, Table exhibits representative 2D heterostructure-based memories. ,− It is representative of three types of 2D heterostructure-based electronic memories: floating gate memory, ORAM, and large-scale 3D memory (Figure c). ,,, Since we thoroughly discussed optical memory circuits in ORAM in the previous section, here we mainly focus on nonoptical-based memory systems.…”

Section: Representative Applications Of 2d Heterostructuresmentioning

confidence: 99%

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

et al. 2022

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A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro–nano–pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

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Ultrathin Three-Monolayer Tunneling Memory Selectors

Cited by 10 publications

References 41 publications

Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction

Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction

Ultra-low turn-off current 2D material heterojunction selectors: first-principle calculations

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

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Ultrathin Three-Monolayer Tunneling Memory Selectors

Cited by 10 publications

References 41 publications

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

Ultra-low turn-off current 2D material heterojunction selectors: first-principle calculations

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

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Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction

Highly Nonlinear Memory Selectors with Ultrathin MoS₂/WSe₂/MoS₂ Heterojunction