Ultrathin Ta<sub>2</sub>O<sub>5</sub> electron-selective contacts for high efficiency InP solar cells

Narangari, Parvathala Reddy; Karuturi, Siva Krishna; Wu, Yiliang; Wong‐Leung, Jennifer; Vora, Kaushal; Lysevych, Mykhaylo; Wan, Yimao; Tan, Hark Hoe; Jagadish, Chennupati; Mokkapati, Sudha

doi:10.1039/c8nr09932d

Cited by 38 publications

(28 citation statements)

References 47 publications

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“…[424] ) and singlecrystal III-V (see e.g. InP [425] ). In these structures, TSO thin-films deliver some critical (see e.g.…”

Section: Wide Bandgap Ferroelectric Oxide Thin-filmsmentioning

confidence: 99%

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Pérez‐Tomás

2019

Adv Materials Inter

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New device concepts and new computing principles are needed to balance our ever-growing appetite for data and information with the realization of the goals of increased energy efficiency, reduction in CO 2 emissions and the circular economy. Neuromorphic or synaptic electronics is an emerging field of research aiming to overcome the current computer's Von-Neumann bottleneck by building artificial neuronal systems to mimic the extremely energy efficient biological synapses. The introduction of photovoltaic and/or photonic aspects into these neuromorphic architectures will produce self-powered adaptive electronics but may also open up new possibilities in artificial neuroscience, artificial neural communications, sensing and machine learning which would enable, in turn, a new era for computational systems owing to the possibility of attaining high bandwidths with much reduced power consumption. This perspective is focused on recent progress in the implementation of functional oxide thinfilms into photovoltaic and neuromorphic applications towards the envisioned goal of selfpowered photovoltaic neuromorphic systems or a solar brain.

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“…[424] ) and singlecrystal III-V (see e.g. InP [425] ). In these structures, TSO thin-films deliver some critical (see e.g.…”

Section: Wide Bandgap Ferroelectric Oxide Thin-filmsmentioning

confidence: 99%

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Pérez‐Tomás

2019

Adv Materials Inter

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“…175,176 Successful passivation of single InAs nanowires by a shell of Al2O3 has been reported. 175 It can also be noted that deposition of oxides such as Ta2O5, 177 ZnO, 178 and TiO2, 179 on top of InP thin film solar cells have been demonstrated to provide pas-Fig. 14.…”

Section: Vd Upscaling and Optimizationmentioning

confidence: 99%

Hot-carrier optoelectronic devices based on semiconductor nanowires

Fast

Aeberhard

Bremner

et al. 2021

Applied Physics Reviews

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In optoelectronic devices such as solar cells and photodetectors, a portion of electron-hole pairs are generated as so-called hot carriers with an excess kinetic energy that is typically lost as heat. The long standing aim to harvest this excess energy to enhance device performance has proven to be very challenging, largely due to the extremely short-lived nature of hot carriers. Efforts thus focus on increasing the hot carrier relaxation time, and on tailoring heterostructures that allow for hot-carrier extraction on short time-and length-scales. Recently, semiconductor nanowires have emerged as a promising system to achieve these aims, because they offer unique opportunities for heterostructure engineering as well as for potentially modified phononic properties that can lead to increased relaxation times. In this review we assess the current state of theory and experiments relating to hot-carrier dynamics in nanowires, with a focus on hot-carrier photovoltaics. To provide a foundation, we begin with a brief overview of the fundamental processes involved in hot-carrier relaxation, and how these can be tailored and characterized in nanowires. We then analyze the advantages offered by nanowires as a system for hot-carrier devices and review the status of proof-of-principle experiments related to hot-carrier photovoltaics. To help interpret existing experiments on photocurrent extraction in nanowires we provide modeling based on non-equilibrium Green's functions. Finally, we identify open research questions that need to be answered in order to fully evaluate the potential nanowires offer towards achieving more efficient, hotcarrier based, optoelectronic devices.

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“…Another interesting passivating electron contact is TaO x with device efficiencies up of 19.1% reported. [ 30,47 ] In other work it was shown that the oxygen deficiency level in TaO x can be altered by using radical‐enhanced ALD. [ 48 ] As an optimized oxygen deficiency is expected to enhance the electrical properties of TaO x , a composition‐controlled TaO x film could result in high device performance.…”

Section: Ald In Solar Cellsmentioning

confidence: 99%

Recent Advances in Materials Design Using Atomic Layer Deposition for Energy Applications

Gupta

Hossain

Riaz

et al. 2021

Adv Funct Materials

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The design and development of materials at the nanoscale has enabled efficient, cutting‐edge renewable energy storage, and conversion devices such as solar cells, water splitting, fuel cells, batteries, and supercapacitors. In addition to creating new materials, the ability to refine the structure and interface properties holds the key to achieving superior performance and durability of these devices. Atomic layer deposition (ALD) has become an important tool for nanofabrication as it allows the deposition of pin‐hole‐free films with atomic‐level thickness and composition control over high aspect ratio surfaces. ALD is successfully used to fabricate devices for renewable energy storage and conversion, for example, to deposit absorber materials, passivation layers, selective contacts, catalyst films, protection barriers, etc. In this review article, recent advances enabled by ALD in designing materials for high‐performance solar cells, catalytic energy conversion systems, batteries, and fuel cells, are summarized. The critical issues impeding the performance and durability of these devices are introduced and then the role of ALD in addressing them is discussed. Finally, the challenges in the implementation of ALD technique for nanofabrication on industrial scale are highlighted and a perspective on potential solutions is provided.

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Ultrathin Ta₂O₅ electron-selective contacts for high efficiency InP solar cells

Abstract: This work demonstrates stoichiometric Ta2O5 ultrathin layer as a novel and efficient electron-selective contact for planar InP heterojunction solar cells achieving an efficiency of 19.1% and a highest ever reported open circuit voltage of 822 mV.

Cited by 38 publications

References 47 publications

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Hot-carrier optoelectronic devices based on semiconductor nanowires

Recent Advances in Materials Design Using Atomic Layer Deposition for Energy Applications

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Ultrathin Ta2O5 electron-selective contacts for high efficiency InP solar cells

Abstract: This work demonstrates stoichiometric Ta2O5 ultrathin layer as a novel and efficient electron-selective contact for planar InP heterojunction solar cells achieving an efficiency of 19.1% and a highest ever reported open circuit voltage of 822 mV.

Cited by 38 publications

References 47 publications

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain

Hot-carrier optoelectronic devices based on semiconductor nanowires

Recent Advances in Materials Design Using Atomic Layer Deposition for Energy Applications

Contact Info

Product

Resources

About

Ultrathin Ta₂O₅ electron-selective contacts for high efficiency InP solar cells