The past five years have seen significant cost reductions in photovoltaics and a correspondingly strong increase in uptake, with photovoltaics now positioned to provide one of the lowest-cost options for future electricity generation. What is becoming clear as the industry develops is that area-related costs, such as costs of encapsulation and field-installation, are increasingly important components of the total costs of photovoltaic electricity generation, with this trend expected to continue. Improved energy-conversion efficiency directly reduces such costs, with increased manufacturing volume likely to drive down the additional costs associated with implementing higher efficiencies. This suggests the industry will evolve beyond the standard single-junction solar cells that currently dominate commercial production, where energy-conversion efficiencies are fundamentally constrained by Shockley-Queisser limits to practical values below 30%. This Review assesses the overall prospects for a range of approaches that can potentially exceed these limits, based on ultimate efficiency prospects, material requirements and developmental outlook.
This study aims to comprehensively calculate the conversion efficiency limits of multijunction solar cells having crystalline silicon (c-Si) not only as a growth substrate but as the lowermost active subcell as well. The first set of efficiency limits is calculated based on the detailed balance principle, assuming a stepwise absorption profile. Practical limits are then calculated using Si absorption data and Auger recombination parameters from the literature. The Si wafer thickness is also considered in the two-stack tandem design. Performances of the tandems are compared when various Si solar cell technologies are used as the bottom subcells. The impact of external radiative efficiency and external quantum efficiency of the top subcell on the tandem performance is studied. Efficiency limits using state-of-the-art devices, and the effect of varying cell thickness on tandem efficiencies is also reported.
The photothermoelectric (PTE) effect uses nonuniform absorption of light to produce a voltage via the Seebeck effect and is of interest for optical sensing and solar-to-electric energy conversion. However, the utility of PTE devices reported to date has been limited by the need to use a tightly focused laser spot to achieve the required, nonuniform illumination and by their dependence upon the Seebeck coefficients of the constituent materials, which exhibit limited tunability and, generally, low values. Here, we use InAs/InP heterostructure nanowires to overcome these limitations: first, we use naturally occurring absorption "hot spots" at wave mode maxima within the nanowire to achieve sharp boundaries between heated and unheated subwavelength regions of high and low absorption, allowing us to use global illumination; second, we employ carrier energy-filtering heterostructures to achieve a high Seebeck coefficient that is tunable by heterostructure design. Using these methods, we demonstrate PTE voltages of hundreds of millivolts at room temperature from a globally illuminated nanowire device. Furthermore, we find PTE currents and voltages that change polarity as a function of the wavelength of illumination due to spatial shifting of subwavelength absorption hot spots. These results indicate the feasibility of designing new types of PTE-based photodetectors, photothermoelectrics, and hot-carrier solar cells using nanowires.
High bandgap perovskite solar cells are integral to perovskite‐based multi‐junction tandem solar cells with efficiency potentials over 40%. However, at present, high bandgap perovskite devices underperform compared to their mid bandgap counterparts in terms of voltage outputs and fill factors resulting in lower than ideal efficiencies. Here, the low fill factor aspect of high bandgap perovskite is addressed by developing a cation‐diffusion‐based double‐sided interface passivation scheme that simultaneously provides bulk passivation for a 1.75 eV perovskite cell that is also compatible with a p‐i‐n cell architecture. The champion cell achieves a record fill factor of 86.5% and a power conversion efficiency of 20.2%. Results of ionic distribution profiling, Fourier transform infrared spectroscopy, and X‐ray diffraction crystallography reveal evidence of cation diffusion from the surface perovskite passivation layer into bulk. The diffused cations reduce Shockley–Read–Hall recombination in the perovskite bulk and at the surfaces with the latter being more dominant as confirmed by light‐intensity dependent and temperature‐dependent open‐circuit voltage measurements as well as thermal admittance spectroscopy. This concurrent bulk and surface passivation scheme renders record fill factor and efficiency in the double‐side passivated cells. This provides new insights for future passivation strategies based on ionic diffusion of functionalized materials.
The limiting efficiency of an intermediate band (IB) solar cell under the terrestrial AM1.5 spectrum was calculated by detailed balance for various concentration levels. The results show four energy gap combinations giving similar limiting efficiencies. This is in contrast to the more studied case of an IB solar cell under a blackbody spectrum where a single optimum combination is found. A design with a subenergy gap of ∼0.57eV is found to be viable, leading to the conclusion that the design space for an IB solar cell is larger when under the AM1.5 spectrum than when under a Blackbody spectrum.
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