Ultrathin oxysulfide semiconductors from liquid metal: a wet chemical approach

Nguyen, Chung Kim; Low, Mei Xian; Zavabeti, Ali; Jannat, Azmira; Murdoch, Billy J.; Gaspera, Enrico Della; Orrell-Trigg, Rebecca; Walia, Sumeet; Elbourne, Aaron; Truong, Vi Khanh; McConville, Christopher F; Syed, Nitu; Daeneke, Torben

doi:10.1039/d1tc01937f

Cited by 20 publications

(17 citation statements)

References 70 publications

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“…Large‐area, ultrathin IAO nanosheets were synthesized from the molten antimony–indium alloy by adapting a liquid metal printing technique (see the Experimental Section and Figure a). [ 7a,c,12a,16 ] In this work, two doping levels of ≈1 at% (LD‐IAO, LD = low‐doped) and ≈5 at% (HD‐IAO, HD = highly doped) have been chosen to investigate the effect of the Sb dopant on the electronic and optoelectronic properties of 2D In 2 O 3 . Both 2D LD‐IAO and HD‐IAO nanosheets could be observed on a millimeter scale, homogeneously covering areas of the SiO 2 /Si substrates (Figure S1, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

“…[ 2b ] Recent attempts to realize 2D In 2 O 3 ‐based TSOs from liquid metal have been reported and identified significant opportunities for further investigation and development. [ 7c,12 ] The deposition of atomically thin, large area, wafer‐scale TSOs constitutes a crucial development and there is an intense quest to explore new 2D TSOs beyond the currently available selection of transparent metal oxides.…”

Section: Introductionmentioning

confidence: 99%

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Atomically Thin Antimony‐Doped Indium Oxide Nanosheets for Optoelectronics

Nguyen

Low

Zavabeti

et al. 2022

Advanced Optical Materials

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Wide bandgap semiconducting oxides are emerging as potential 2D materials for transparent electronics and optoelectronics. This fuels the quest for discovering new 2D metal oxides with ultrahigh transparency and high mobility. While the former can be achieved by reducing the thickness of oxide films to only a few nanometers, the latter is more commonly realized by intentional doping. This article reports a one‐step synthesis of few‐unit‐cell‐thick and laterally large antimony‐doped indium oxide (IAO). The doping process occurs spontaneously when the oxide is grown on the surface of a molten Sb–In alloy and 2D IAO nanosheets can be easily printed onto desired substrates. With thicknesses at the atomic scale, these materials exhibit excellent transparency exceeding 98% across the visible and near‐infrared range. Field‐effect transistors based on low‐doped IAO nanosheets reveal a high electron mobility of ≈40 cm2 V−1 s−1. Additionally, a notable photoresponse is observed in 2D IAO‐based photodetectors under ultraviolet (UV) radiation. Photoresponsivities of low‐doped and highly doped IAO at a wavelength of 285 nm are found to be 1.2 × 103 and 0.7 × 103 A W−1, respectively, identifying these materials as promising candidates for the fabrication of high‐performance optoelectronics in the UV region.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atomically Thin Antimony‐Doped Indium Oxide Nanosheets for Optoelectronics

Nguyen

Low

Zavabeti

et al. 2022

Advanced Optical Materials

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“…Nguyen et al. reported a two-step process combining the liquid metal method and low temperature wet chemical reaction to obtain 2D indium oxysulfide from In 2 O 3 ( Nguyen et al., 2021 ). The transformation was carried out in a solution of polysulfide radical anions, in which the replacement of oxygen atoms by sulfur atoms was promoted by highly reactive trisulfur radical anions.…”

Section: Fabrication Methods Of 2d Metal Oxidesmentioning

confidence: 99%

Recent advances in the fabrication of 2D metal oxides

et al. 2022

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Summary Atomically thin two-dimensional (2D) metal oxides exhibit unique optical, electrical, magnetic, and chemical properties, rendering them a bright application prospect in high-performance smart devices. Given the large variety of both layered and non-layered 2D metal oxides, the controllable synthesis is the critical prerequisite for enabling the exploration of their great potentials. In this review, recent progress in the synthesis of 2D metal oxides is summarized and categorized. Particularly, a brief overview of categories and crystal structures of 2D metal oxides is firstly introduced, followed by a critical discussion of various synthesis methods regarding the growth mechanisms, advantages, and limitations. Finally, the existing challenges are presented to provide possible future research directions regarding the synthesis of 2D metal oxides. This work can provide useful guidance on developing innovative approaches for producing both 2D layered and non-layered nanostructures and assist with the acceleration of the research of 2D metal oxides.

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“…Si et al fabricated a 2 nm-thick 2D-ITO channel by a top-down approach using chemical wet-etching and successfully demonstrated excellent TFT performances such as a high field-effect mobility (μ FE ) of ∼55 cm 2 V –1 s –1 and an on/off-current ratio of ∼10 7 using ∼20 nm atomic layer deposition (ALD)-HfZrO high- k gate oxide at the process temperature of 400 °C. , Compared with the top-down wet-etching process that requires precise control of process conditions, the bottom-up process has several advantages such as simple fabrication with less process steps, low-density defects in the semiconductor channel, low process temperature, and good film uniformity. Developing a 2D-ITO channel by low-temperature bottom-up growth such as vacuum-free liquid-metal printing, a method transferring ultrathin oxide skins from melting metal to a substrate, − is highly promising for 2D-channel oxide-TFTs.…”

Section: Introductionmentioning

confidence: 99%

Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

2022

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A cost-effective, vacuum-free, liquid-metal-printed two-dimensional (2D) (∼1.9 nm-thick) tin-doped indium oxide (ITO) thin-film transistor (TFT) was developed at the maximum process temperature of 200 °C. A large-sized 2D-ITO channel layer with an electron density of ∼1.2 × 1019 cm–3 was prepared in an ambient atmosphere. The 2D-ITO-TFT operated in full depletion with a threshold voltage of −2.1 V and demonstrated good TFT device characteristics such as a high saturation mobility of ∼27 cm2 V–1 s–1, a small subthreshold slope of <382 mV decade–1, and a large on/off-current ratio of >109. The TFT device simulation analysis found that the 2D-ITO-TFT performances were controlled by the shallow acceptor-like in-gap defects spreading in the midgap region of over 1.0 eV below the conduction band minimum. Post-thermal annealing tuned the electron density of the 2D-ITO channel and enabled it to produce enhancement and depletion-mode 2D-ITO-TFTs. A full signal swing zero-V GS-load n-type metal–oxide semiconductor (NMOS) inverter composed of depletion-load/enhancement-driver 2D-ITO-TFTs and a complementary inverter with p-channel 2D-SnO-TFT were successfully demonstrated using all 2D-oxide-TFTs.

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Ultrathin oxysulfide semiconductors from liquid metal: a wet chemical approach

Abstract: Metal oxychalcogenides are emerging as a new motif of group VI-A semiconductors with unique electronic properties. Among this family, two dimensional (2D) oxysulfide materials have been increasingly involved in the...

Cited by 20 publications

References 70 publications

Atomically Thin Antimony‐Doped Indium Oxide Nanosheets for Optoelectronics

Atomically Thin Antimony‐Doped Indium Oxide Nanosheets for Optoelectronics

Recent advances in the fabrication of 2D metal oxides

Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

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