Ultrathin nickel oxide film as a hole buffer layer to enhance the optoelectronic performance of a polymer light-emitting diode

Wang, Yongli; Niu, Qiao; Hu, CanDong; Wang, Wenjie; He, Miao; Zhang, Yong; Li, Shuti; Zhao, Lingzhi; Wang, Xin; Xu, Jia; Zhu, Qiuxiang; Chen, Sihai

doi:10.1364/ol.36.001521

Cited by 17 publications

(9 citation statements)

References 17 publications

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“…Another important application for NiO is the hole‐transporting layer (HTL) in organic optoelectronic or PV devices. Irwin and co‐worker performed an excellent study on the use of NiO for the HTL in organic PV devices .…”

Section: Miscellaneous Applications Of P‐type Oxidesmentioning

confidence: 99%

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Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

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Section: Miscellaneous Applications Of P‐type Oxidesmentioning

confidence: 99%

“…The same mechanism works for light‐emitting diodes (LEDs) or organic LEDs, compared with ITO, a better band alignment between the NiO and the p‐layers can be achieved. It was shown that, the NiO HTL increases both the LED drain current and the luminance, and enhances the power conversion efficiency …”

Section: Miscellaneous Applications Of P‐type Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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“…But, TMOs are usually deposited by vacuum process under 10 −7 Torr and high temperature process is needed to evaporate TMOs, which requires high manufacturing cost. Therefore, vacuum process is not compatible with lost‐cost flexible electronics . On the other hand, solution processing has advantages of low‐cost and simple process, as a result, it is suitable for cost‐effective PLEDs.…”

Section: Introductionmentioning

confidence: 99%

Solution processed polymer light emitting diode with vanadium-oxide doped PEDOT:PSS

Kim

Kanwat

Kim

et al. 2014

Phys. Status Solidi A

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We studied the solution processed vanadium pentoxide (V2O5) doping effect in PEDOT:PSS for use in hole injection layer (HIL), and as a result, V2O5 doped PEDOT:PSS improved the performance of polymer light‐emitting diode (PLED) significantly. The improvement is related to the increased conductivity of PEDOT:PSS by V2O5 doping. This improvement enhances hole injection into the emission layer, and it will improve the charge balance. The PLED with PEDOT:PSS HIL and super yellow polymer has maximum current and power efficiencies of 12.01 cd A−1 and 9.67 lm W−1, respectively. On the other hand, the device with V2O5 (10:1) doped PEDOT:PSS indicates the maximum current and power efficiencies of 15.12 cd A−1 and 12.66 lm W−1, respectively, indicating that the efficiencies increase over 20% compared to the control device. The leakage currents of the PLED decrease to ∼10% of the control PLED. Note also that V2O5 suppressed the diffusion of indium from anode to PEDOT:PSS, and also prevented the acidic damage from sulfate ions of PEDOT:PSS to IZO and active layer.

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“…, bare ZnO. Since NiO contributes only negligibly to the CL intensity (as seen in Figure 3 ), we can conclude that enhanced defect related luminescence from the composite nanostructure is due to the influence of the p-type NiO on n-type ZnO and can be related to hole injection and simultaneous recombination of electrons and holes [ 43 ].…”

Section: Resultsmentioning

confidence: 99%

Decoration of ZnO Nanorods with Coral Reefs like NiO Nanostructures by the Hydrothermal Growth Method and Their Luminescence Study

et al. 2014

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Composite nanostructures of coral reefs like p-type NiO/n-type ZnO were synthesized on fluorine-doped tin oxide glass substrates by hydrothermal growth. Structural characterization was performed by field emission scanning electron microscopy, high-resolution transmission electron microscopy, and X-ray diffraction techniques. This investigation shows that the adopted synthesis leads to high crystalline quality nanostructures. The morphological study shows that the coral reefs like nanostructures are densely packed on the ZnO nanorods. Cathodoluminescence (CL) spectra for the synthesized composite nanostructures are dominated mainly by a broad interstitial defect related luminescence centered at ~630 nm. Spatially resolved CL images reveal that the luminescence of the decorated ZnO nanostructures is enhanced by the presence of the NiO.

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Ultrathin nickel oxide film as a hole buffer layer to enhance the optoelectronic performance of a polymer light-emitting diode

Cited by 17 publications

References 17 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Solution processed polymer light emitting diode with vanadium-oxide doped PEDOT:PSS

Decoration of ZnO Nanorods with Coral Reefs like NiO Nanostructures by the Hydrothermal Growth Method and Their Luminescence Study

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