2011
DOI: 10.1002/pssa.201000921
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Ultrathin metal oxidation for vacuum monitoring device applications

Abstract: The oxide growth on thin metal films at room temperature has been investigated in terms of resistance change during oxidation. These data have been interpreted using the extended Cabrera-Mott theory of oxidation by Boggio. The resulting oxide thickness as well as the oxidation kinetics was found to depend on pressure. According to this dependence, oxidation of ultrathin metal films can be applied for monitoring the vacuum quality inside an evacuated environment. The performance of aluminum and copper sensing l… Show more

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Cited by 7 publications
(3 citation statements)
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“…This frequency agrees with the safe estimation: fnormalT = f(|inormalC||inormalE| = 1) = gnormalm2πCox = 13 MHzwhich stems from the common unity gain of small‐signal currents | i C / i B | (collector/base) . Accordingly, f T depends on the transconductance g m (8.16 mS) and the parasitic oxide capacitance C ox (parameters: A act = 0.04 mm 2 , oxide thickness d ox ≈ 2–3 nm, dielectric constant ε ox ≈ 4.5–8.9, and permittivity ε 0 ) . The further prospect of the OPBT is demonstrated in Figure b.…”
Section: Publications Of Different Organic Transistors and An Inorgansupporting
confidence: 85%
“…This frequency agrees with the safe estimation: fnormalT = f(|inormalC||inormalE| = 1) = gnormalm2πCox = 13 MHzwhich stems from the common unity gain of small‐signal currents | i C / i B | (collector/base) . Accordingly, f T depends on the transconductance g m (8.16 mS) and the parasitic oxide capacitance C ox (parameters: A act = 0.04 mm 2 , oxide thickness d ox ≈ 2–3 nm, dielectric constant ε ox ≈ 4.5–8.9, and permittivity ε 0 ) . The further prospect of the OPBT is demonstrated in Figure b.…”
Section: Publications Of Different Organic Transistors and An Inorgansupporting
confidence: 85%
“…Due to air exposure, a thin native aluminum-oxide is formed around the base contact. 24 This insulator represents an additional barrier for charge carriers. Thus, the current flow from emitter to base is suppressed leading to an enhancement of the transmission from emitter to collector.…”
Section: Top Electrode As the Emittermentioning
confidence: 99%
“…Then, the device was exposed to the air (5 min) to form Al oxide (AlO x ) layer around source metal. AlOx, being an insulator, reduces the leakage current [8, 22, 23]. Furthermore, 100 nm lithium fluoride (LiF) (0.05 nm/s) was deposited sequentially as an insulator layer [24, 25] followed by 120 nm Al to have gate contact.…”
Section: Device Structure and Fabricationmentioning
confidence: 99%