Advanced Organic Permeable‐Base Transistor with Superior Performance

Klinger, Markus P.; Fischer, Axel; Kaschura, Felix; Scholz, Reinhard; Lüssem, Björn; Kheradmand‐Boroujeni, Bahman; Ellinger, Frank; Kasemann, Daniel; Leo, Karl

doi:10.1002/adma.201502788

Cited by 32 publications

(43 citation statements)

References 33 publications

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“…In the devices previously published in Ref. 8, we have seen that real devices operate well within the described range. Furthermore, a change in the ratio between opening area and device area will lead to a shift of the exponential law in region I.…”

Section: Region IIImentioning

confidence: 66%

“…The motivation for our simulations is experimental studies on C 60 -OPBTs. 8,13 Following Ref. 21, we assume the mobility to be 0.1 cm 2 /(Vs).…”

Section: Carrier Transport Model and Simulation Setupmentioning

confidence: 99%

“…2,3 Research on OPBTs covers experimental techniques and methods for improving the performance of n-type as well as p-type OPBTs. [2][3][4][5][6][7][8][9][10][11][12][13][14] Klinger et al recently showed easy-to-produce OPBTs based on the n-type semiconductor C 60 , reaching high current densities above 10 A/cm 2 and transit frequencies in the MHz-regime at low voltage. 8 The devices are fabricated by a layer by layer vacuum deposition, and after processing of the base electrode, the device is exposed to air for several minutes, leading to a thin native aluminum oxide film around the base electrode.…”

Section: Introductionmentioning

confidence: 99%

“…Such large openings are not visible in SEM images of OPBTs fabricated with nano-sized self-structuring of the base electrode, like the high performance devices presented recently. 8,13 The openings in those devices are much smaller, only a few nanometers in diameter, and the distance between two openings is large compared to the opening itself. 17 Nevertheless, very high current densities above 10 A/cm 2 are reported.…”

Section: Introductionmentioning

confidence: 99%

“…17 Nevertheless, very high current densities above 10 A/cm 2 are reported. 8 At this point, the question arises, how such high current densities are possible if the total area of all openings is only a small fraction of the active device area.…”

Section: Introductionmentioning

confidence: 99%

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Operation mechanism of high performance organic permeable base transistors with an insulated and perforated base electrode

Kaschura

Fischer

Klinger

et al. 2016

Journal of Applied Physics

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The organic permeable base transistor is a vertical transistor architecture that enables high performance while maintaining a simple low-resolution fabrication. It has been argued that the charge transport through the nano-sized openings of the central base electrode limits the performance. Here, we demonstrate by using 3D drift-diffusion simulations that this is not the case in the relevant operation range. At low current densities, the applied base potential controls the number of charges that can pass through an opening and the opening is the current limiting factor. However, at higher current densities, charges accumulate within the openings and in front of the base insulation, allowing for an efficient lateral transport of charges towards the next opening. The on-state in the current-voltage characteristics reaches the maximum possible current given by space charge limited current transport through the intrinsic semiconductor layers. Thus, even a small effective area of the openings can drive huge current densities, and further device optimization has to focus on reducing the intrinsic layer thickness to a minimum.

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Section: Region IIImentioning

confidence: 66%

“…The motivation for our simulations is experimental studies on C 60 -OPBTs. 8,13 Following Ref. 21, we assume the mobility to be 0.1 cm 2 /(Vs).…”

Section: Carrier Transport Model and Simulation Setupmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Operation mechanism of high performance organic permeable base transistors with an insulated and perforated base electrode

Kaschura

Fischer

Klinger

et al. 2016

Journal of Applied Physics

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A Review of Vertical Organic Transistors

Kleemann

Krechan

Fischer

et al. 2020

Adv Funct Materials

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119

110

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Powerful electronic devices require performant short‐channel transistors. For organic electronics, though, promising low‐cost and flexible electronic circuits, high processing costs for short channel devices are not acceptable. In this regard, vertical organic transistors (VOTs) are an attractive alternative, and in fact, today they reach the highest transition frequency (40 MHz) and the highest footprint current density (>1 MA cm−2) among all organic transistors. Here, all VOT concepts are reviewed, while discussing device physics, integration approaches, and highlighting the recent developments. The upcoming challenges for the VOT technology are also presented with a guideline for further developments.

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Sub‐50 nm Channel Vertical Field‐Effect Transistors using Conventional Ink‐Jet Printing

et al. 2016

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A printed vertical field-effect transistor is demonstrated, which decouples critical device dimensions from printing resolution. A printed mesoporous semiconductor layer, sandwiched between vertically stacked drive electrodes, provides <50 nm channel lengths. A polymer-electrolyte-based gate insulator infiltrates the percolating pores of the mesoporous channel to accumulate charge carriers at every semiconductor domain, thereby, resulting in an unprecedented current density of MA cm .

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Advanced Organic Permeable‐Base Transistor with Superior Performance

Abstract: An optimized vertical organic permeable-base transistor (OPBT) competing with the best organic field-effect transistors in performance, while employing low-cost fabrication techniques, is presented. The OPBT stands out by its excellent power efficiency at the highest frequencies.

Cited by 32 publications

References 33 publications

Operation mechanism of high performance organic permeable base transistors with an insulated and perforated base electrode

Operation mechanism of high performance organic permeable base transistors with an insulated and perforated base electrode

A Review of Vertical Organic Transistors

Sub‐50 nm Channel Vertical Field‐Effect Transistors using Conventional Ink‐Jet Printing

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