Ultrathin Janus WSSe buffer layer for W(S/Se)2 absorber based solar cells: A hybrid, DFT and macroscopic, simulation studies

Inorganic Lead‐Free Cs2AuBiCl6 Perovskite Absorber and Cu2O Hole Transport Material Based Single‐Junction Solar Cells with 22.18% Power Conversion Efficiency

“…The other derivative electronic properties such as effective mass ( m *) and thermal velocity ( V th ) for electron and hole, the conduction and valence band density of states, i.e., N C and N V are calculated as [ 46 ] Where h , ℏ, K B , m e, and m h are Planck constant, reduced Planck constant, Boltzmann constant, the mass of electron, and mass of hole, respectively.…”

Performance analysis of WSe2-based bifacial solar cells with different electron transport and hole transport materials by SCAPS-1D

“…In the bulk region of each semiconductor layer of the device, a single-level defect (donor/acceptor) with Gaussian energetic distribution is introduced and bulk defect density of each layer of the device is listed in Table 1 . The hole and electron capture cross-section for defects in the WSe 2 layer are computed as: cm 2 ; where n t is the defect density in the WSe 2 layer (10 14 cm −3 ), v is the thermal velocity of electron (1.7 × 10 7 cm/s) and hole (1.4 × 10 7 cm/s) [ 56 ], and τ is carrier lifetime in the WSe 2 absorber layer.…”

Transition from Schottky to Ohmic contacts in Janus MoSSe/germanene heterostructures

“…11 A number of theoretical studies have shown that two-dimensional Janus materials perform well in gas sensors, 12,13 photocatalytic water splitting, [14][15][16] field-effect transistors, 17 and solar cells. 18,19 However, practical use of MoSSe in a device will require a contact with metal electrodes to enable injection of carriers. 20 For this reason, we investigate in the present work van der Waals heterostructures constructed from MoSSe (considering both the S and Se sides) and germanene (Ge).…”