Performance analysis of WSe2-based bifacial solar cells with different electron transport and hole transport materials by SCAPS-1D

Performance analysis of p-MoTe2/n-MoSe2 -based bifacial solar cells with p+-N:Cu2O as BSF layer by SCAPS-1D

“…Finally, the BF of PCE of 77.5% has been found. These findings are in agreement with previous reports elsewhere [10,49].…”

“…The key feature to improve the efficiency of n-MoSe 2 /p-MoTe 2 /p + -N:Cu 2 O photovoltaic solar cell is the growth of V oc (0.98 from 0.91 V) originating by the larger built-in potential (1.12 from 1.06 V) in the n-MoSe 2 /p-MoTe 2 /p + -N:Cu 2 O heterostructure from the pristine case (figure 8 5.1 to 5.7 eV, and the result is depicted in figure 9(a). The results agree well with our earlier studies [10,[39][40][41]. Such a type of simulation is important to choose the back contact as well as front contact metals.…”

“…It is observed in figure 4(a) that except for short circuit current density, all parameters show the same feature of exponential growth with the acceptor density up to 10 19 cm −3 , after that, reduce with further increase of doping density of MoTe 2 layer. It is confirmed from figure S3 that the built-in potential at the n-MoSe 2 /p-MoTe 2 junction increases due to a strong depletion layer formed for high doping density, which improves the charge separation capability thus, the cell efficiency [10]. FF also increases with the increase of the acceptor level, originating from the enhanced conductivity of the MoTe 2 layer with the increase of doping density.…”

“…Recently, mono-layer of MX 2 (where M is a transition metal, like, Mo, W, Nb, Ti, and X is ascribed as a chalcogen atom, such as S, Se, Te) has attracted enormous attention from the researcher [9]. TMDCs have a three-layer microstructure of chalcogen -transition metalchalcogen, where the interlayer is bonded by a very weak van der Waals force, so the electrical and optical properties can be tuned easily by suitable doping [10]. Among them, MoTe 2 has been attracted as an absorber layer, as it exhibits p-type behavior [11], due to its excellent optical absorption coefficient around 10 5 cm −1 , tunable band gap from 1 to 1.2 eV, high carrier mobility, non-toxicity, and abundance in the earth [12][13][14].…”

Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Zn3P2 Hole Transport Layer and a TiO2 Electron Transport Layer

“…Consequently, the decrease in the V oc and the small enlargement in the J sc stimulate the drop in the FF and the PCE of the solar device at high temperatures . Similar temperature-dependent output parameters of the PV devices have also been uncovered in former studies. ,,,− The drop in PCE from 31.36 to 20.94% and in FF from 87.93 to 78.38% at temperatures in the range from 283 to 473 K are recorded for the suggested SnS solar energy system.…”