Ultrathin cobalt-alloyed barrier layers for copper metallization by a new seeding and electroless-deposition process

Chen, Sung-Te; Liu, Yuan-Yu; Chen, Giin-Shan

doi:10.1016/j.apsusc.2015.03.035

Cited by 9 publications

(2 citation statements)

References 20 publications

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“…In pursuit of these goals, Zyulkov et al 164 Chen and co-workers 302 have investigated an alternate approach not requiring SAMs for deposition of ultrathin EL Co films. They treat a thermal oxide Si wafer surface with NH 3 /H 2 O 2 solution (i.e., SC-1) to create surface Si−O − sites from Si−OH groups present on the oxide surface.…”

Section: ■ Elementsmentioning

confidence: 99%

Electroless Metallization of the Elements: Survey and Progress

Turró

Dressick

2022

ACS Appl. Electron. Mater.

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The electroless plating of metals and their alloys, oxides, and chalcogenides represents a critically important technology for the automotive, aerospace, machine tools, and, especially, the electronics industries. Since the initial efforts involving the plating of industrially important metals, such as Ni, Co, Cu, Ag, and Au, in the mid-20th century, the process has evolved to encompass a growing number of elements. At the same time, this expansion in the palette of accessible metals has enabled progress in these industries and evoked new nonconventional applications. In this review, we collect and survey available electroless processes in aqueous and organic solvent systems for each element organized according to position in the Periodic Table as a resource for the reader. Examples illustrating progress in the field are presented and are described in sufficient detail to be useful and understandable for both the expert and nonexpert. Given the historical importance of electronics as a driver for development of electroless processes, examples are electronics-related where possible. However, we strive to also include examples of applications in nontraditional fields to provide the reader with a sense of generality available for electroless methods. The review closes with an outlook for the field and a challenge to scientists and engineers to adapt electroless processes for new applications to continue the growth of the field.

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Section: ■ Elementsmentioning

confidence: 99%

Electroless Metallization of the Elements: Survey and Progress

Turró

Dressick

2022

ACS Appl. Electron. Mater.

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“…Thus, effective barriers are necessary to prevent interdiffusion or reaction between Cu and adjacent materials [5][6][7][8][9][10][11][12][13]. As integrated circuits are continuously scaling down to the nanometer range, their electrical resistivity significantly increases due to electron grain boundary scattering [14][15][16]. Moreover, the thickness of the barrier layer is unable to be further scaled down without significant deterioration in the device's reliability [3].…”

Section: Introductionmentioning

confidence: 99%

Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect

Wang,

Guo,

Dong

et al. 2024

Coatings

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In this study, the barrier properties and diffusion behavior of carbon-doped Cu(Ni) alloy film were investigated. The films were fabricated using magnetron sputtering on a barrierless silicon substrate. X-ray diffraction patterns and electric resistivity results demonstrated that the barrierless Cu(NiC) alloy films remained thermally stable up to 650 °C. Transmission electron microscopy images provided the presence of a self-formed diffusion layer between the Cu(NiC) alloy and Si substrate. The effect of carbon-doped atoms on the diffusion behavior of the Cu(NiC) films was analyzed by X-ray photoemission spectroscopy depth profile. Results revealed that carbon doping can improve the barrier properties of barrierless Cu(Ni) film. Moreover, X-ray photoemission spectroscopy was performed to examine the chemical states of the self-formed layer at the Cu(NiC)/Si interface. The self-formed diffusion layer was found to consist of Cu metal, Ni metal, Si, Cu2O, NiO, and SiO2.

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Effects of Additives on Electrochemical Growth of Cu Film on Co/SiO2/Si Substrate by Alternating Underpotential Deposition of Pb and Surface-Limited Redox Replacement by Cu

Fang

Lin

et al. 2017

Journal of Elec Materi

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Ultrathin cobalt-alloyed barrier layers for copper metallization by a new seeding and electroless-deposition process

Cited by 9 publications

References 20 publications

Electroless Metallization of the Elements: Survey and Progress

Electroless Metallization of the Elements: Survey and Progress

Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect

Effects of Additives on Electrochemical Growth of Cu Film on Co/SiO2/Si Substrate by Alternating Underpotential Deposition of Pb and Surface-Limited Redox Replacement by Cu

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