Effects of Additives on Electrochemical Growth of Cu Film 	on Co/SiO2/Si Substrate by Alternating Underpotential Deposition of Pb and Surface-Limited Redox Replacement 	by Cu

Fang, Jau–Shiung; Lin, Li-jun; Wu, Cheng-Yang; Cheng, Yi-Lung; Chen, G. S.

doi:10.1007/s11664-017-5692-5

Cited by 4 publications

(2 citation statements)

References 39 publications

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“…In Figure 2A, we show that the initial cobalt layer is also oxidized on the surface because of the presence of a peak at 780 eV in addition to the cobalt metal peak at 778 eV. 20 In the case of the cobalt seed layer, the dipping time is 5 seconds because of the instability of cobalt metal in concentrated copper solution 21 and also, to better approximate industrial conditions. The ratio between cobalt metal and cobalt oxide is increased after alkaline treatment.…”

Section: Resultsmentioning

confidence: 99%

Investigation of Cu/TaN and Co/TaN Barrier-Seed Oxidation by Acidic and Alkaline Copper Electroplating Chemistry for Damascene Applications

Caillard

Vigneron

Thiam

et al. 2018

J. Electrochem. Soc.

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The effect of plating chemistry on standard damascene integration has been investigated to assess their effect on the interface quality of the final barrier/seed/fill integration. Dipping Co/TaN/SiO 2 and Cu/TaN/SiO 2 substrates wafers in acidic copper plating chemistry and ligand-based alkaline copper plating chemistry (aveni solution) shows that only the latter maintain the integrity of the substrate while the former degrades the seed (Co or Cu) and the barrier (TaN). We demonstrate that this degradation is extremely fast in the case of a cobalt seed thus only an alkaline ligand-based chemistry is compatible with a direct copper plating on cobalt seed approach. These results are critical because of the ever-going trend of decreasing semiconductors features size that requires the thinning down and removal of disposable metal layers while still maintaining the quality of the interfaces and the integrity of the whole integration.

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Section: Resultsmentioning

confidence: 99%

Investigation of Cu/TaN and Co/TaN Barrier-Seed Oxidation by Acidic and Alkaline Copper Electroplating Chemistry for Damascene Applications

Caillard

Vigneron

Thiam

et al. 2018

J. Electrochem. Soc.

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“…Cu E-ALD was investigated on Ag, 8 Au, 8,9,11 Co, 12 TaN 13 and Ru 6,7,10,14 as substrates. Among these, two works focus on the deposition by the one-pot approach.…”

mentioning

confidence: 99%

Deposition of Copper Nanofilms by Surface-Limited Redox Replacement of Underpotentially Deposited Lead on Polycrystalline Gold

Dornhof¹,

Urban²,

Kieninger³

2018

J. Electrochem. Soc.

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Electrochemical atomic layer deposition (E-ALD) of copper on polycrystalline gold is a promising method to achieve highly reproducible nanofilms. Cu films of more than 30 nm were deposited by the repetitive execution of underpotential deposition (UPD) of lead and a subsequent surface limited redox replacement by Cu. Both steps were carried out in the same solution. The method enables, in contrast to conventional gas phase ALD, the deposition of layers with different height on the same substrate. Deposit growth in this one-pot system was monitored in-situ with an electrochemical quartz crystal microbalance. Film thickness, measured by optical profilometry, was compared to the number of deposition cycles and indicated a highly linear dependency. Obtained layers were characterized by means of atomic force and scanning electron microscopy and showed a slight roughening with almost no increase in the effective surface area. Energy dispersive X-ray measurements confirmed the purity of deposited Cu nanofilms. It was shown, that even with a simple setup, the described method allows the reproducible deposition of Cu on polycrystalline Au.

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Ultrathin Layers

Péter

2021

Monographs in Electrochemistry

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Effects of Additives on Electrochemical Growth of Cu Film on Co/SiO2/Si Substrate by Alternating Underpotential Deposition of Pb and Surface-Limited Redox Replacement by Cu

Cited by 4 publications

References 39 publications

Investigation of Cu/TaN and Co/TaN Barrier-Seed Oxidation by Acidic and Alkaline Copper Electroplating Chemistry for Damascene Applications

Investigation of Cu/TaN and Co/TaN Barrier-Seed Oxidation by Acidic and Alkaline Copper Electroplating Chemistry for Damascene Applications

Deposition of Copper Nanofilms by Surface-Limited Redox Replacement of Underpotentially Deposited Lead on Polycrystalline Gold

Ultrathin Layers

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