Ultrathin BaTiO<sub>3</sub>-Based Ferroelectric Tunnel Junctions through Interface Engineering

Li, Changjian; Huang, Lisen; Li, Tao; Lü, Weiming; Qiu, Xuepeng; Huang, Zhen; Liu, Zhiqi; Zeng, Shengwei; Guo, Rui; Zhao, Yongliang; Zeng, Kaiyang; Coey, Michael; Chen, Jingsheng; Ariando, Ariando; Venkatesan, T.

doi:10.1021/acs.nanolett.5b00138

Cited by 86 publications

(75 citation statements)

References 28 publications

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“…4(b)-4(d), respectively. The nearly constant R ON Â A product with a mean of $0.05 X cm 2 for different areas FTJ matches with the reported value 34 verifying the ferroelectric switching at nanoscale. 33 The average %TER is 1.5 Â 10 4 % among the measured devices with a maximum observed TER is 1.6 Â 10 5 % for a 400 Â 400 nm 2 FTJ.…”

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confidence: 86%

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Abuwasib

et al. 2016

Applied Physics Letters

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supporting

confidence: 86%

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Abuwasib

et al. 2016

Applied Physics Letters

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“…12,13 Up to recently, most studies of FTJs have focused on improving device performance by modifying the electrode materials. [14][15][16][17][18][19][20] Typical examples include the use of lightly doped semiconductors, [14][15][16] For a thick barrier, these obstacles can be avoided, but the tunneling current becomes too small for realizing a practically useful device. As an alternative, several groups have theoretically proposed a new kind of FTJ using an FE/paraelectric (FE/PE) composite barrier.…”

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confidence: 99%

Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO₃/SrTiO₃ Composite Barriers

et al. 2016

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ABSTRACT:Ferroelectric tunnel junctions (FTJs) have attracted increasing research interest as a promising candidate for non-volatile memories. Recently, significant enhancements of tunneling electroresistance (TER) have been realized through modifications of electrode materials.However, direct control of the FTJ performance through modifying the tunneling barrier has not been adequately explored. Here, adding a new direction to FTJ research, we fabricated FTJs with Ferroelectric tunnel junctions (FTJs), composed of a thin ferroelectric (FE) layer sandwiched in between two metallic electrodes, have been intensively investigated in recent years. This device is considered to be a promising candidate for next-generation nonvolatile memories, because it combines the advantages of both ferroelectric random-access-memory and resistiveswitching memory. 1-3 The concept of FTJ was first proposed by Esaki in 1971, 4 but the research activities have not flourished untixl this decade. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] The operation of FTJs has been mainly explained in terms of interfacial screening of polarization charges. [5][6][7][8] In a metal 1(M1)/FE/metal 2 (M2) structured FTJ (Figure 1a), the two asymmetric electrodes lead to unequal screen lengths and potential changes at metal/FE interfaces. Depending on the polarizations, the electrostatic potential profile of tunneling barrier will be varied. As a result, the tunneling resistance can be switched between low (ON) and high (OFF) values by polarization reversal, leading to the socalled tunneling electroresistance (TER) effect.Extensive experimental works based on this asymmetric screening scenario have been reported during the last decade. In 2009, the TER effect was first demonstrated using conducting atomic force microscopy (CAFM). 9-11 Subsequently, FTJs with highly reproducible performance were realized in capacitor geometry, which will be useful for practical applications. 12,13 Up to recently, most studies of FTJs have focused on improving device performance by modifying the electrode materials. [14][15][16][17][18][19][20] Typical examples include the use of lightly doped semiconductors, [14][15][16] For a thick barrier, these obstacles can be avoided, but the tunneling current becomes too small for realizing a practically useful device. As an alternative, several groups have theoretically proposed a new kind of FTJ using an FE/paraelectric (FE/PE) composite barrier. 27,28 The PE layer provides a new route to control the tunneling barrier potentials, and thus the TER can be tuned and significantly enhanced. However, there have been few experimental efforts to systematically attest this theoretical prediction. 29 In this paper, we report experimental control of the TER effect by directly manipulating the tunneling barrier thickness and composition. For this purpose, we fabricated two types of FTJs: Figure S5), which further confirm good epitaxial film qualities.We estimated the lattice constants of the oxide layers from XRD reci...

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“…very much sensitive to ferroelectric crystallinity, which is also visible in the spectrum [35][36][37]. The peaks at 850 and 885 cm 21 associates with the ACAF symmetric stretch and ACH 2 in plane rocking deformations, respectively. The above all bonds are highly sensitive to dipole orientation toward the applied electric field.…”

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confidence: 87%

Preparation and characterization of poly(vinylidene fluoride-trifluoroethylene)/barium titanate polymer nanocomposite for ferroelectric applications

et al. 2015

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Barium titanate nanoparticles with an average size of <100 nm were added to poly(vinylidene fluoride‐trifluoroethylene) copolymer in varying concentrations (0.2, 0.4, 0.6, and 0.8 wt%) in liquid phase under bath sonication and annealed at 120°C for 2 h. The Fourier transform infrared spectroscopy, X‐ray diffraction, Raman spectroscopy, and Differential scanning calorimetry studies reveals an increase in the β‐phase content of the nanocomposite, which is a promising inference for the increased ferroelectric property of the material. Scanning electron microscopy and Atomic force microscopy was used to study the surface topography of the spin coated thin films. Polarization–electric field studies clearly indicating the enhanced ferroelectric nature of optimized concentration with highest remnant polarization. All these results nominate this polymer nanocomposite as a promising material for ferroelectric applications like nonvolatile memory devices. POLYM. COMPOS., 38:1655–1661, 2017. © 2015 Society of Plastics Engineers

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Ultrathin BaTiO₃-Based Ferroelectric Tunnel Junctions through Interface Engineering

Cited by 86 publications

References 28 publications

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO₃/SrTiO₃ Composite Barriers

Preparation and characterization of poly(vinylidene fluoride-trifluoroethylene)/barium titanate polymer nanocomposite for ferroelectric applications

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Ultrathin BaTiO3-Based Ferroelectric Tunnel Junctions through Interface Engineering

Cited by 86 publications

References 28 publications

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO3/SrTiO3 Composite Barriers

Preparation and characterization of poly(vinylidene fluoride-trifluoroethylene)/barium titanate polymer nanocomposite for ferroelectric applications

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Ultrathin BaTiO₃-Based Ferroelectric Tunnel Junctions through Interface Engineering

Overcoming the Fundamental Barrier Thickness Limits of Ferroelectric Tunnel Junctions through BaTiO₃/SrTiO₃ Composite Barriers