Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Abuwasib, Mohammad; Lu, Haidong; Li, Tao; Buragohain, Pratyush; Lee, Hyungwoo; Eom, Chang‐Beom; Gruverman, Alexei; Singisetti, Uttam

doi:10.1063/1.4947020

Cited by 30 publications

(21 citation statements)

References 41 publications

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“…The tunneling resistance of a FTJ is modulated by electric field induced ferroelectric polarization switching-the effect known as tunneling electroresistance (TER). Following the theoretical predictions [9,10], there have been a number of successful experimental demonstrations of the TER effect in trilayer junctions [11][12][13][14][15][16], showing the potential of FTJs for nonvolatile memory applications [17,18]. The structural and/or electronic asymmetry of the FTJ plays a decisive role for the TER effect.…”

Section: Introductionmentioning

confidence: 89%

Resonant tunneling across a ferroelectric domain wall

Tao

Velev

et al. 2018

Phys. Rev. B

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Li, M.; Tao, L. L.; Velev, J. P.; and Tsymbal, Evgeny Y., "Resonant tunneling across a ferroelectric domain wall" (2018 Motivated by recent experimental observations, we explore electron transport properties of a ferroelectric tunnel junction (FTJ) with an embedded head-to-head ferroelectric domain wall, using first-principles density-functional theory calculations. We consider a FTJ with La 0.5 Sr 0.5 MnO 3 electrodes separated by a BaTiO 3 barrier layer and show that an in-plane charged domain wall in the ferroelectric BaTiO 3 can be induced by polar interfaces. The resulting V-shaped electrostatic potential profile across the BaTiO 3 layer creates a quantum well and leads to the formation of a two-dimensional electron gas, which stabilizes the domain wall. The confined electronic states in the barrier are responsible for resonant tunneling as is evident from our quantum-transport calculations. We find that the resonant tunneling is an orbital selective process, which leads to sharp spikes in the momentum-and energy-resolved transmission spectra. Our results indicate that domain walls embedded in FTJs can be used to control the electron transport.

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Section: Introductionmentioning

confidence: 89%

Resonant tunneling across a ferroelectric domain wall

Tao

Velev

et al. 2018

Phys. Rev. B

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“…Ferroelectric films are widely used in microelectromechanical systems, sensors and ferroelectric random access memory (FeRAM) due to their excellent dielectric, ferroelectric and piezoelectric properties [1][2][3][4][5]. The mainstay ferroelectric materials for applications have traditionally been the Pb(Zr,Ti)O 3 (PZT) films due to their excellent performance (large remnant polarization P r and small coercive field E C ).…”

Section: Introductionmentioning

confidence: 99%

Structure and Electrical Properties of Na0.5Bi0.5TiO3 Epitaxial Films with (110) Orientation

et al. 2019

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Pt/Na 0.5 Bi 0.5 TiO 3 /La 0.5 Sr 0.5 CoO 3 (Pt/NBT/LSCO) ferroelectric capacitors were fabricated on (110) SrTiO 3 substrate. Both NBT and LSCO films were epitaxially grown on the (110) SrTiO 3 substrate. It was found that the leakage current density of the Pt/NBT/LSCO capacitor is favorable to ohmic conduction behavior when the applied electric fields are lower than 60 kV/cm, and bulk-limited space charge-limited conduction takes place when the applied electric fields are higher than 60 kV/cm. The Pt/NBT/LSCO capacitor possesses good fatigue resistance and retention, as well as ferroelectric properties with P r = 35 µC/cm 2 . The ferroelectric properties of the Pt/NBT/LSCO capacitor can be modulated by ultraviolet light. The effective polarization, ∆P, was reduced and the maximum polarization P max was increased for the Pt/NBT/LSCO capacitor when under ultraviolet light, which can be attributed to the increased leakage current density and non-reversible polarization Pˆcaused by the photo-generated carriers.

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“…This effect was observed in PLD grown mixed‐phase BFO and a very large retention time was measured due to the pinning of domains in the regions where both T‐phase and R‐phase existed . A very recent study carried out by Abuwasib and collaborators shows this potential memory storage device in practice, created through PLD and electron‐beam lithography . The group created ferroelectric tunnel junctions of Co‐BTO‐SRO (cobalt – barium titanate – strontium ruthenate) layers with lateral dimensions of 300 nm 2 , and measured hysteresis loops and characterised the switching behavior of the integrated capacitors.…”

Section: Alternatives To Fib Nanostructuringmentioning

confidence: 99%

Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies

Burns

Gregg

Valanoor

2016

Adv Funct Materials

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As we reach the physical limit of Moore's law and silicon based electronics, alternative schemes for memory and sensor devices are being proposed on a regular basis. The properties of ferroelectric materials on the nanoscale is key to developing device applications of this intriguing material class, and has been readily pursued in recent times. One of the most significant techniques with which nanostructuring is achieved is the focused-ion-beam (FIB) microscope. Alongside nanoscale characterization obtained from piezoresponse force microscopy, the FIB has become a powerful tool in the search for first principles understanding of the ferroelectric phenomena. This review explores a brief history of the relationship between the FIB and ferroelectrics, the fascinating properties it has unveiled, and some alternative nanostructuring techniques.

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Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions

Abstract: Uttam, "Scaling of electroresistance effect in fully integrated ferroelectric tunnel junctions" (2016). Alexei Gruverman Publications. 63.

Cited by 30 publications

References 41 publications

Resonant tunneling across a ferroelectric domain wall

Resonant tunneling across a ferroelectric domain wall

Structure and Electrical Properties of Na0.5Bi0.5TiO3 Epitaxial Films with (110) Orientation

Nanostructuring Ferroelectrics via Focused Ion Beam Methodologies

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