Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH<sub>3</sub>‐MBE

Rennesson, S.; Leroux, M.; Khalfioui, M. Al; Némoz, M.; Chenot, Sébastien; Massies, J.; Largeau, L.; Dogmus, Ezgi; Zégaoui, M.; Medjdoub, Farid; Sèmond, F.

doi:10.1002/pssa.201700640

Cited by 15 publications

(15 citation statements)

References 18 publications

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“…The XRC-FWHM of AlN (10-12) decreased with increasing holding time. The XRC-FWHM values for GaN before heat treatment were in the range of 83-124 arcsec for GaN (0002) and 83-108 arcsec for GaN(10)(11)(12). Here, the XRC-FWHM values for the AlN obtained from the substitution method were quite large compared with the GaN substrate as a starting material.…”

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confidence: 80%

“…AlN can be grown in two forms: film and bulk. AlN films have been fabricated by various methods, such as metal–organic vapour-phase epitaxy (MOVPE) 4 , 5 , hydride vapour phase epitaxy (HVPE) 6 , 7 , pulsed laser deposition (PLD) 8 , 9 , molecular beam epitaxy (MBE) 10 , 11 , or sputtering 12 , 13 , to improve its crystalline quality, surface area, growth rate, or lower its processing temperature. Annealing techniques have been demonstrated to improve the crystalline quality of AlN films 14 – 16 .…”

Section: Introductionmentioning

confidence: 99%

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AlN formation by an Al/GaN substitution reaction

Noorprajuda

Ohtsuka

Adachi

et al. 2020

Sci Rep

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Aluminium nitride (Aln) is a promising semiconductor material for use as a substrate in high-power, high-frequency electronic and deep-ultraviolet optoelectronic devices. We study the feasibility of a novel Aln fabrication technique by using the Al/Gan substitution reaction method. the substitution method we propose here consists of an Al deposition process on a Gan substrate by a sputtering technique and heat treatment process. the substitution reaction (Al + Gan = Aln + Ga) is proceeded by heat treatment of the Al/Gan sample, which provides a low temperature, simple and easy process. C-axis-oriented Aln layers are formed at the Al/Gan interface after heat treatment of the Al/Gan samples at some conditions of 1473-1573 K for 0-3 h. A longer holding time leads to an increase in the thickness of the AlN layer. The growth rate of the AlN layer is controlled by the interdiffusion in the Aln layer. Aluminium nitride (AlN) is a promising semiconductor material for use as a substrate in high-power, highfrequency electronic and optoelectronic devices. It can be used as a substrate in AlGaN-based ultraviolet C (UV-C) optoelectronic devices owing to its wide bandgap (above 6 eV) 1 , UV transparency 2 , and close lattice constant with that of AlGaN 3. AlN can be grown in two forms: film and bulk. AlN films have been fabricated by various methods, such as metal-organic vapour-phase epitaxy (MOVPE) 4,5 , hydride vapour phase epitaxy (HVPE) 6,7 , pulsed laser deposition (PLD) 8,9 , molecular beam epitaxy (MBE) 10,11 , or sputtering 12,13 , to improve its crystalline quality, surface area, growth rate, or lower its processing temperature. Annealing techniques have been demonstrated to improve the crystalline quality of AlN films 14-16. To facilitate the further development of AlN crystal growth, several researchers have developed original and unconventional techniques. For example, the pyrolytic transportation method 17 , the liquid phase epitaxy (LPE) method using a Ga-Al binary solution 18 , Al-Sn flux growth 19 , AlN fabrication by using Al and Li 3 N solid sources 20 , and elementary-source vapour-phase epitaxy (EVPE) 21 have been demonstrated. In the pyrolytic transportation method 17 , α-Al 2 O 3 is used as an Al-source material, and it is heated at 2223 K to form Al 2 O gas in the nitrogen gas flow. The Al 2 O gas is transported to the growth zone to react with nitrogen gas at 2023 K on a sintered AlN plate for 30 h, which yields a rod-like AlN crystal (48-mm long). The advantages of this method are an economically friendly α-Al 2 O 3 source and good crystalline quality of AlN. Wu et al. 21 used metallic Al and nitrogen gas as source materials to grow an AlN crystal, which they called elementary-source vapour-phase epitaxy (EVPE). They grew the AlN with a growth rate of 18 μm/h under an optimum growth zone temperature of 1823 K. The advantages of this method are that it is conducted at a temperature lower than that of the sublimation method using no hazardous gas. Regarding the LPE methods, Adachi et al. 18 grew a 1-µm-...

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mentioning

confidence: 80%

Section: Introductionmentioning

confidence: 99%

AlN formation by an Al/GaN substitution reaction

Noorprajuda

Ohtsuka

Adachi

et al. 2020

Sci Rep

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“…The small thicknesses of the epilayers and the formation of 2DEG in the AGA heterostructure make the realization of sharp and smooth interfaces imperative. Small changes in the GaN channel and AlN barrier thicknesses can influence 2DEG properties like carrier density and mobility [15,35,36]. Good crystal quality for GaN and AlN epilayers can be achieved when they are grown under metal-rich (III/V > 1) condition, which is accompanied by the issue of accumulation of metal droplets which can hinder the abruptness of interfaces by the alloy formation.…”

Section: Challenges In Aln/gan/aln Growthmentioning

confidence: 99%

“…Si has been the choice of substrate for III-nitride devices designed for high volume and low-cost applications. Several III-nitride based devices on Si substrate for power amplification and voltage switching applications have been demonstrated [16,36,46,47]. The large lattice mismatch and thermal mismatch of Si with III-nitrides are its major limiting factors as they lead to the development of dislocations and cracks [48].…”

Section: Substrates For Iii-nitride Materials Growthmentioning

confidence: 99%

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2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure

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Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering

Patwal

Agrawal

Radhakrishnan

et al. 2019

Physica Status Solidi (a)

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Herein, 2D electron gas (2DEG) enhancement in an AlN/GaN/AlN double‐heterojunction high‐electron‐mobility transistor (DH‐HEMT) is achieved by epilayer stress engineering. The epistructures are grown on a SiC substrate using plasma‐assisted molecular beam epitaxy (PA‐MBE). The stress in the AlN buffer is systematically studied as a function of the III/V ratio. An optimized AlN buffer layer with the relaxation of 66% and a smooth surface morphology with a root mean square (RMS) roughness of 0.5 nm is grown using the two‐step growth method with recovery via metal consumption. It is observed that the stress in the GaN channel is influenced by the stress in the AlN buffer nonlinearly. Furthermore, the carrier mobility increases as the stress in the GaN channel is increased. However, the 2DEG density remains unchanged. An optimized AlN/GaN/AlN DH‐HEMT epistructure with very high 2DEG sheet carrier density of 4.1 × 1013 cm−2 and carrier mobility of 613 cm2 V−1 s−1 is achieved, which leads to higher device output power density.

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Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH₃‐MBE

Cited by 15 publications

References 18 publications

AlN formation by an Al/GaN substitution reaction

AlN formation by an Al/GaN substitution reaction

2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure

Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering

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Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE

Cited by 15 publications

References 18 publications

AlN formation by an Al/GaN substitution reaction

AlN formation by an Al/GaN substitution reaction

2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure

Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering

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Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH₃‐MBE